Abstract: A micro electro mechanical system switch and a method of fabricating the same. The micro electro mechanical system switch includes a substrate a plurality of signal lines formed at sides an upper surface of the substrate and including switching contact points and a plurality of immovable electrodes on the upper surface of the substrate and between the plurality of signal lines. An inner actuating member performs a seesaw based on a center of the substrate and together with an outer actuating member. Pushing rods are formed at ends of an upper surface of the inner actuating member with ends protruding from and overlapping with an upper portion of the outer actuating member. Contacting members are formed on a lower surface of the outer actuating member so as to be pushed by the pushing rods and contacting the switching contact points of the signal lines.

Abstract: A micro thin-film structure, a micro electro-mechanical system (MEMS) switch, and methods of fabricating them. The micro thin-film structure includes at least two thin-films having different properties and laminated in sequence to form an upper layer and a lower layer, wherein an interface between the upper and lower layers is formed to be oriented to at least two directions. The micro thin film structure, and method of forming, may be applied to a movable electrode of an MEMS switch. The thin-film structure may be formed by forming through-holes in the lower layer, and depositing the upper layer in the form of being engaged in the through-holes. Alternatively, the thin-film structure may be made by forming prominence and depression parts on the top side of the lower layer and then depositing the upper layer on the top side of the lower layer having the prominence and depression parts.

Abstract: A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.