Abstract: A light-emitting diode device includes: a substrate; a light-emitting layered structure formed on the substrate; a multi-functional layer having a first main portion and formed on the light-emitting layered structure for spreading current laterally and for reflecting light emitted from the light-emitting layered structure; and first and second electrodes electrically coupled to the light-emitting layered structure. The first electrode is formed on the light-emitting layered structure and has a first electrode main part. The first main portion of the multi-functional layer is aligned below and is provided with a size larger than that of the first electrode main part.

Abstract: A light-emitting diode device includes: a substrate; and a semiconductor layered structure including an n-type semiconductor layer that has an exposed region, and a p-type semiconductor layer that is disposed over the n-type semiconductor layer without extending over the exposed region. An electrode unit is electrically coupled to the semiconductor layered structure, and includes a first electrode and a second electrode. The second electrode has an electrode pad, an end node, and a connecting strip. The electrode pad is larger than the end node. The connecting strip is narrower than the end node.

Abstract: A light-emitting diode device includes: a substrate; a light-emitting layered structure disposed on the substrate and including a first cladding layer, an active layer, and a second cladding layer; a first electrode; a second electrode disposed on the light-emitting layered structure; and a current blocking region provided in the light-emitting layered structure below the second electrode, and having a main portion that is aligned below and is as large as the second electrode, and an extension portion extending from the main portion and protruding beyond the second electrode to a distance ranging from 3 ?m to 20 ?m.

Abstract: A method of making a rough substrate includes: (a) forming a first oxide layer; (b) coating a photoresist layer; (c) exposing and developing the photoresist layer; (d) etching parts of the first oxide layer such that parts of the first oxide layer are formed into a plurality of sacrificial protrusions; (e) removing the photoresist regions; (f) depositing on the substrate layer and the sacrificial protrusions a second oxide layer; (g) etching the second oxide layer so as to leave portions of the second oxide layer; and (h) etching additionally the sacrificial protrusions, the substrate layer, and the portions of the second oxide layer, thereby producing a plurality of flat recess bottom faces, and substrate protrusions.

Abstract: A light-emitting diode device includes: a substrate; a light-emitting layered structure formed on the substrate; a multi-functional layer having a first main portion and formed on the light-emitting layered structure for spreading current laterally and for reflecting light emitted from the light-emitting layered structure; and first and second electrodes electrically coupled to the light-emitting layered structure. The first electrode is formed on the light-emitting layered structure and has a first electrode main part. The first main portion of the multi-functional layer is aligned below and is provided with a size larger than that of the first electrode main part.