Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: A semiconductor device disposed on a substrate is provided. The semiconductor device includes two isolation structures, a first conductive layer, a charge trapping layer, a second conductive layer and a gate dielectric layer. The two isolation structures are disposed in the substrate to define an active area. The second conductive layer across the two isolation structures is disposed on the substrate. The first conductive layer is disposed between the two isolation structures and between the second conductive layer and the substrate. The second conductive layer electrically connects with the first conductive layer. The charge trapping layer is disposed on the substrate. The gate dielectric layer is disposed between the first conductive layer and the substrate. An interface between the two isolation structures and the first conductive layer is covered by the charge trapping layer to restrain the kink effect.

Abstract: A method of fabricating a non-volatile memory is provided. A substrate having a memory cell area and a peripheral circuit area is provided. A plurality of device isolation structures is formed in the substrate. A tunneling dielectric layer is formed on the substrate in the memory cell area and a gate oxide layer is formed on the substrate in the peripheral circuit area. A first conductive layer is formed on the substrate to cover the memory cell area and the peripheral circuit area. The first conductive layer in the memory cell area is patterned. A composite dielectric layer is formed on the substrate. The composite dielectric layer in the peripheral circuit area is removed. A second conductive layer is formed on the substrate to cover the memory cell area and the peripheral circuit area.