Patents by Inventor Che-Hui Lee
Che-Hui Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230375684Abstract: A target measurement device is provided. The target measurement device includes a fixing ring, a main body, and a transceiver. The fixing ring has a first surface. The main body is over the first surface of the fixing ring. The transceiver is coupled to the main body. The transceiver is at least movable between a center of the fixing ring to an edge of the fixing ring from a top view perspective. A method for measuring a target is also provided.Type: ApplicationFiled: July 27, 2023Publication date: November 23, 2023Inventors: PRADIP GIRDHAR CHAUDHARI, CHE-HUI LEE, CHIH-CHENG WEI, WEN-CHENG YANG, CHYI-TSONG NI
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Publication number: 20230343635Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.Type: ApplicationFiled: June 28, 2023Publication date: October 26, 2023Inventors: Yen-Ru Lee, Chii-Horng Li, Chien-I Kuo, Li-Li Su, Chien-Chang Su, Heng-Wen Ting, Jung-Chi Tai, Che-Hui Lee, Ying-Wei Li
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Patent number: 11754691Abstract: A target measurement device is provided. The target measurement device includes a fixing ring, a main body, and a transceiver. The fixing ring has a first surface. The main body is over the first surface of the fixing ring. The transceiver is coupled to the main body. The transceiver is at least movable between a center of the fixing ring to an edge of the fixing ring from a top view perspective. A method for measuring a target is also provided.Type: GrantFiled: June 19, 2020Date of Patent: September 12, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Pradip Girdhar Chaudhari, Che-Hui Lee, Chih-Cheng Wei, Wen-Cheng Yang, Chyi-Tsong Ni
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Patent number: 11747131Abstract: A measuring method is provided. A probe and a first sensor are disposed over a jig including a bar protruding from the jig. The probe is moved until a first surface of the probe is laterally aligned with a second surface of the bar facing the jig. A first distance between the second surface of the bar and the first sensor is obtained by the first sensor. The probe and the first sensor are disposed over a magnetron. Magnetic field intensities at different elevations above the magnetron are measured by the probe. A method for forming a semiconductor structure is also provided.Type: GrantFiled: August 8, 2022Date of Patent: September 5, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Pradip Girdhar Chaudhari, Che-Hui Lee
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Patent number: 11728208Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.Type: GrantFiled: May 10, 2021Date of Patent: August 15, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yen-Ru Lee, Chii-Horng Li, Chien-I Kuo, Li-Li Su, Chien-Chang Su, Heng-Wen Ting, Jung-Chi Tai, Che-Hui Lee, Ying-Wei Li
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Patent number: 11532470Abstract: A method includes providing a jig including a predetermined center and a magnetron installed on the jig; rotating the magnetron and obtaining a measured first magnetic flux density at the predetermined center of the jig; defining a first area of the magnetron based on the measured first magnetic flux density; rotating the magnetron and measuring a plurality of second magnetic flux densities within the first area of the magnetron; deriving a measured second magnetic flux density among the plurality of second magnetic flux densities; comparing the measured second magnetic flux density with a predetermined threshold; and performing an operation based on the comparison.Type: GrantFiled: June 3, 2019Date of Patent: December 20, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Pradip Girdhar Chaudhari, Che-Hui Lee, Wen-Cheng Yang
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Publication number: 20220373412Abstract: A measuring method is provided. A probe and a first sensor are disposed over a jig including a bar protruding from the jig. The probe is moved until a first surface of the probe is laterally aligned with a second surface of the bar facing the jig. A first distance between the second surface of the bar and the first sensor is obtained by the first sensor. The probe and the first sensor are disposed over a magnetron. Magnetic field intensities at different elevations above the magnetron are measured by the probe. A method for forming a semiconductor structure is also provided.Type: ApplicationFiled: August 8, 2022Publication date: November 24, 2022Inventors: PRADIP GIRDHAR CHAUDHARI, CHE-HUI LEE
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Publication number: 20220359175Abstract: A method includes providing a jig including a predetermined center and a magnetron installed on the jig; rotating the magnetron and obtaining a measured first magnetic flux density at the predetermined center of the jig; defining a first area of the magnetron based on the measured first magnetic flux density; rotating the magnetron and measuring a plurality of second magnetic flux densities within the first area of the magnetron; deriving a measured second magnetic flux density among the plurality of second magnetic flux densities; comparing the measured second magnetic flux density with a predetermined threshold; and performing an operation based on the comparison.Type: ApplicationFiled: July 25, 2022Publication date: November 10, 2022Inventors: PRADIP GIRDHAR CHAUDHARI, CHE-HUI LEE, WEN-CHENG YANG
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Patent number: 11460290Abstract: A measuring method is provided. A probe and a first sensor are disposed over a jig including a bar protruding from the jig. The probe is moved until a first surface of the probe is laterally aligned with a second surface of the bar facing the jig. A first distance between the second surface of the bar and the first sensor is obtained by the first sensor. The probe and the first sensor are disposed over a magnetron. Magnetic field intensities at different elevations above the magnetron are measured by the probe. A method for forming a semiconductor structure is also provided.Type: GrantFiled: August 18, 2020Date of Patent: October 4, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Pradip Girdhar Chaudhari, Che-Hui Lee
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Publication number: 20210265195Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.Type: ApplicationFiled: May 10, 2021Publication date: August 26, 2021Inventors: Yen-Ru Lee, Chii-Horng Li, Chien-I Kuo, Li-Li Su, Chien-Chang Su, Heng-Wen Ting, Jung-Chi Tai, Che-Hui Lee, Ying-Wei Li
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Patent number: 11004724Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.Type: GrantFiled: April 22, 2019Date of Patent: May 11, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Ru Lee, Chii-Horng Li, Chien-I Kuo, Li-Li Su, Chien-Chang Su, Heng-Wen Ting, Jung-Chi Tai, Che-Hui Lee, Ying-Wei Li
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Publication number: 20210095950Abstract: A measuring method is provided. A probe and a first sensor are disposed over a jig including a bar protruding from the jig. The probe is moved until a first surface of the probe is laterally aligned with a second surface of the bar facing the jig. A first distance between the second surface of the bar and the first sensor is obtained by the first sensor. The probe and the first sensor are disposed over a magnetron. Magnetic field intensities at different elevations above the magnetron are measured by the probe. A method for forming a semiconductor structure is also provided.Type: ApplicationFiled: August 18, 2020Publication date: April 1, 2021Inventors: PRADIP GIRDHAR CHAUDHARI, CHE-HUI LEE
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Publication number: 20210096229Abstract: A target measurement device is provided. The target measurement device includes a fixing ring, a main body, and a transceiver. The fixing ring has a first surface. The main body is over the first surface of the fixing ring. The transceiver is coupled to the main body. The transceiver is at least movable between a center of the fixing ring to an edge of the fixing ring from a top view perspective. A method for measuring a target is also provided.Type: ApplicationFiled: June 19, 2020Publication date: April 1, 2021Inventors: PRADIP GIRDHAR CHAUDHARI, CHE-HUI LEE, CHIH-CHENG WEI, WEN-CHENG YANG, CHYI-TSONG NI
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Publication number: 20200168444Abstract: A method includes providing a jig including a predetermined center and a magnetron installed on the jig; rotating the magnetron and obtaining a measured first magnetic flux density at the predetermined center of the jig; defining a first area of the magnetron based on the measured first magnetic flux density; rotating the magnetron and measuring a plurality of second magnetic flux densities within the first area of the magnetron; deriving a measured second magnetic flux density among the plurality of second magnetic flux densities; comparing the measured second magnetic flux density with a predetermined threshold; and performing an operation based on the comparison.Type: ApplicationFiled: June 3, 2019Publication date: May 28, 2020Inventors: PRADIP GIRDHAR CHAUDHARI, CHE-HUI LEE, WEN-CHENG YANG
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Publication number: 20190252240Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.Type: ApplicationFiled: April 22, 2019Publication date: August 15, 2019Inventors: Yen-Ru Lee, Chii-Horng Li, Chien-I Kuo, Li-Li Su, Chien-Chang Su, Heng-Wen Ting, Jung-Chi Tai, Che-Hui Lee, Ying-Wei Li
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Patent number: 10269618Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.Type: GrantFiled: November 27, 2017Date of Patent: April 23, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Ru Lee, Chii-Horng Li, Chien-I Kuo, Li-Li Su, Chien-Chang Su, Heng-Wen Ting, Jung-Chi Tai, Che-Hui Lee, Ying-Wei Li
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Publication number: 20180082883Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.Type: ApplicationFiled: November 27, 2017Publication date: March 22, 2018Inventors: Yen-Ru Lee, Chii-Horng Li, Chien-I Kuo, Li-Li Su, Chien-Chang Su, Heng-Wen Ting, Jung-Chi Tai, Che-Hui Lee, Ying-Wei Li
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Patent number: 9831116Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.Type: GrantFiled: January 20, 2016Date of Patent: November 28, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Ru Lee, Chii-Horng Li, Chien-I Kuo, Li-Li Su, Chien-Chang Su, Heng-Wen Ting, Jung-Chi Tai, Che-Hui Lee, Ying-Wei Li
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Publication number: 20170076973Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.Type: ApplicationFiled: January 20, 2016Publication date: March 16, 2017Inventors: Yen-Ru Lee, Chii-Horng Li, Chien-I Kuo, Lilly Su, Chien-Chang Su, Heng-Wen Ting, Jung-Chi Tai, Che-Hui Lee, Ying-Wei Li