Patents by Inventor Che-Ju Yeh
Che-Ju Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230395122Abstract: A memory device includes an array of memory cells and a plurality of peripheral circuits operably coupled to the memory array. A power control circuit may be configured to individually control an application of power to each of the plurality of peripheral circuits and the array of memory cells. Inserting a switch device across the different power domains to achieve the same sequential wake-up path for the peripheral circuits connected to different power domains reduces peak current.Type: ApplicationFiled: August 4, 2023Publication date: December 7, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Che-Ju Yeh, Hau-Tai Shieh, Yi-Tzu Chen
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Patent number: 11763873Abstract: A memory device includes an array of memory cells and a plurality of peripheral circuits operably coupled to the memory array. A power control circuit may be configured to individually control an application of power to each of the plurality of peripheral circuits and the array of memory cells. Inserting a switch device across the different power domains to achieve the same sequential wake-up path for the peripheral circuits connected to different power domains reduces peak current.Type: GrantFiled: May 25, 2022Date of Patent: September 19, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Che-Ju Yeh, Hau-Tai Shieh, Yi-Tzu Chen
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Publication number: 20230245677Abstract: A method of designing a circuit is provided. The method includes: providing a circuit; selecting a first NMOS fin field-effect transistor (FinFET) in the circuit; and replacing the first NMOS FinFET having a first fin number with a second NMOS FinFET having a second fin number and a third NMOS FinFET having a third fin number, wherein the sum of the second fin number and the third fin number is equal to the first fin number.Type: ApplicationFiled: January 30, 2023Publication date: August 3, 2023Inventors: Yi-Tzu Chen, Hau-Tai Shieh, Che-Ju Yeh
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Publication number: 20230053795Abstract: A bit line is pre-charged based on a clock signal internal to a bit line pre-charge circuit when a bit line pre-charge window is within a margin of a predetermined pre-charge window. A bit line is pre-charged based on a clock signal external to the bit line pre-charge circuit when the bit line pre-charge window is outside the margin of the predetermined pre-charge window.Type: ApplicationFiled: August 23, 2022Publication date: February 23, 2023Inventors: Che-Ju Yeh, Yu-Hao Hsu, Hau-Tai Shieh, Cheng Lee
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Patent number: 11568121Abstract: A method of designing a circuit is provided. The method includes: providing a circuit; selecting a first NMOS fin field-effect transistor (FinFET) in the circuit; and replacing the first NMOS FinFET having a first fin number with a second NMOS FinFET having a second fin number and a third NMOS FinFET having a third fin number, wherein the sum of the second fin number and the third fin number is equal to the first fin number.Type: GrantFiled: April 9, 2021Date of Patent: January 31, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yi-Tzu Chen, Hau-Tai Shieh, Che-Ju Yeh
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Publication number: 20220284941Abstract: A memory device includes an array of memory cells and a plurality of peripheral circuits operably coupled to the memory array. A power control circuit may be configured to individually control an application of power to each of the plurality of peripheral circuits and the array of memory cells. Inserting a switch device across the different power domains to achieve the same sequential wake-up path for the peripheral circuits connected to different power domains reduces peak current.Type: ApplicationFiled: May 25, 2022Publication date: September 8, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Che-Ju Yeh, Hau-Tai Shieh, Yi-Tzu Chen
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Patent number: 11423962Abstract: A bit line is pre-charged based on a clock signal internal to a bit line pre-charge circuit when a bit line pre-charge window is within a margin of a predetermined pre-charge window. A bit line is pre-charged based on a clock signal external to the bit line pre-charge circuit when the bit line pre-charge window is outside the margin of the predetermined pre-charge window.Type: GrantFiled: May 27, 2021Date of Patent: August 23, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, ltd.Inventors: Che-Ju Yeh, Yu-Hao Hsu, Hau-Tai Shieh, Cheng Lee
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Patent number: 11361810Abstract: A memory device includes an array of memory cells and a plurality of peripheral circuits operably coupled to the memory array. A power control circuit may be configured to individually control an application of power to each of the plurality of peripheral circuits and the array of memory cells. Inserting a switch device across the different power domains to achieve the same sequential wake-up path for the peripheral circuits connected to different power domains reduces peak current.Type: GrantFiled: November 24, 2020Date of Patent: June 14, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Che-Ju Yeh, Hau-Tai Shieh, Yi-Tzu Chen
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Publication number: 20210397773Abstract: A method of designing a circuit is provided. The method includes: providing a circuit; selecting a first NMOS fin field-effect transistor (FinFET) in the circuit; and replacing the first NMOS FinFET having a first fin number with a second NMOS FinFET having a second fin number and a third NMOS FinFET having a third fin number, wherein the sum of the second fin number and the third fin number is equal to the first fin number.Type: ApplicationFiled: April 9, 2021Publication date: December 23, 2021Inventors: Yi-Tzu Chen, Hau-Tai Shieh, Che-Ju Yeh
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Patent number: 11120868Abstract: A semiconductor memory device comprising a plurality of memory cells configured to store digital data and an input multiplexer configured to enable the selection of a particular memory cell from the plurality of memory cells. The semiconductor memory device further comprises a read/write driver circuit configured to read data from the selected memory cell and write data to the selected memory cell, and a write logic block configured to provide logical control to the read/write driver circuit for writing data to the selected of memory cell. The read/write driver circuit may be coupled to the read/write input multiplexer by a data line and an inverted data line and the read and the write operations to the selected memory cell occur over the same data line and inverted data line.Type: GrantFiled: December 5, 2019Date of Patent: September 14, 2021Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chien-Yuan Chen, Che-Ju Yeh, Hau-Tai Shieh, Cheng Hung Lee, Hung-Jen Liao, Sahil Preet Singh, Manish Arora, Hemant Patel, Li-Wen Wang
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Patent number: 11087833Abstract: A power management circuit suitable for a memory device and a memory device is provided. The power management circuit includes a first logic circuit, a second logic circuit, and a transmission gate. The first logic circuit is configured to receive an inverted first input signal and a second input signal and generates a first output signal. The second logic circuit is configured to receive a first input signal and the second input signal and generates a second output signal. The transmission gate is configured to receive the first output signal and generates a control signal to at least one power transistor coupled between the power management circuit and the memory device. During a standby mode, the power transistor is turned on to make a first voltage equal to a predetermined voltage and during a sleep mode, the control signal is coupled to a first voltage. The predetermined voltage is greater than the first voltage.Type: GrantFiled: June 22, 2020Date of Patent: August 10, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Chen Kuo, Cheng-Hung Lee, Chi-Ting Cheng, Hua-Hsin Yu, Wei-Jer Hsieh, Yu-Hao Hsu, Yang-Syu Lin, Che-Ju Yeh
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Publication number: 20210241811Abstract: A memory device includes an array of memory cells and a plurality of peripheral circuits operably coupled to the memory array. A power control circuit may be configured to individually control an application of power to each of the plurality of peripheral circuits and the array of memory cells. Inserting a switch device across the different power domains to achieve the same sequential wake-up path for the peripheral circuits connected to different power domains reduces peak current.Type: ApplicationFiled: November 24, 2020Publication date: August 5, 2021Inventors: Che-Ju Yeh, Hau-Tai Shieh, Yi-Tzu Chen
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Publication number: 20210125662Abstract: A power management circuit suitable for a memory device and a memory device is provided. The power management circuit includes a first logic circuit, a second logic circuit, and a transmission gate. The first logic circuit is configured to receive an inverted first input signal and a second input signal and generates a first output signal. The second logic circuit is configured to receive a first input signal and the second input signal and generates a second output signal. The transmission gate is configured to receive the first output signal and generates a control signal to at least one power transistor coupled between the power management circuit and the memory device. During a standby mode, the power transistor is turned on to make a first voltage equal to a predetermined voltage and during a sleep mode, the control signal is coupled to a first voltage. The predetermined voltage is greater than the first voltage.Type: ApplicationFiled: June 22, 2020Publication date: April 29, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Chen Kuo, Cheng-Hung Lee, Chi-Ting Cheng, Hua-Hsin Yu, Wei-Jer Hsieh, Yu-Hao Hsu, Yang-Syu Lin, Che-Ju Yeh
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Publication number: 20200111526Abstract: A semiconductor memory device comprising a plurality of memory cells configured to store digital data and an input multiplexer configured to enable the selection of a particular memory cell from the plurality of memory cells. The semiconductor memory device further comprises a read/write driver circuit configured to read data from the selected memory cell and write data to the selected memory cell, and a write logic block configured to provide logical control to the read/write driver circuit for writing data to the selected of memory cell. The read/write driver circuit may be coupled to the read/write input multiplexer by a data line and an inverted data line and the read and the write operations to the selected memory cell occur over the same data line and inverted data line.Type: ApplicationFiled: December 5, 2019Publication date: April 9, 2020Inventors: Chien-Yuan Chen, Che-Ju Yeh, Hau-Tai Shieh, Cheng-Hung Lee, Hung-Jen Liao, Sahil Preet Singh, Manish Arora, Hemant Patel, Li-Wen Wang
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Patent number: 10510401Abstract: A semiconductor memory device comprising a plurality of memory cells configured to store digital data and an input multiplexer configured to enable the selection of a particular memory cell from the plurality of memory cells. The semiconductor memory device further comprises a read/write driver circuit configured to read data from the selected memory cell and write data to the selected memory cell, and a write logic block configured to provide logical control to the read/write driver circuit for writing data to the selected of memory cell. The read/write driver circuit may be coupled to the read/write input multiplexer by a data line and an inverted data line and the read and the write operations to the selected memory cell occur over the same data line and inverted data line.Type: GrantFiled: May 16, 2018Date of Patent: December 17, 2019Assignee: Taiwan Semicondutor Manufacturing Company LimitedInventors: Chien-Yuan Chen, Che-Ju Yeh, Hau-Tai Shieh, Cheng-Hung Lee, Hung-Jen Liao, Sahil Preet Singh, Manish Arora, Hemant Patel, Li-Wen Wang
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Publication number: 20180336944Abstract: A semiconductor memory device comprising a plurality of memory cells configured to store digital data and an input multiplexer configured to enable the selection of a particular memory cell from the plurality of memory cells. The semiconductor memory device further comprises a read/write driver circuit configured to read data from the selected memory cell and write data to the selected memory cell, and a write logic block configured to provide logical control to the read/write driver circuit for writing data to the selected of memory cell. The read/write driver circuit may be coupled to the read/write input multiplexer by a data line and an inverted data line and the read and the write operations to the selected memory cell occur over the same data line and inverted data line.Type: ApplicationFiled: May 16, 2018Publication date: November 22, 2018Inventors: Chien-Yuan Chen, Che-Ju Yeh, Hau-Tai Shieh, Cheng-Hung Lee, Hung-Jen Liao, Sahil Preet Singh, Manish Arora, Hemant Patel, Li-Wen Wang
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Patent number: 9979399Abstract: A circuit is disclosed. The circuit includes eight MOD transistors and a capacitor, the first MOS transistor having a source coupled to a first predetermined supply voltage (VDDM), a second MOS transistor having a source coupled to a first predetermined supply voltage VDDM, a third MOS transistor having a source coupled to a drain of the first MOS transistor, a fourth MOS transistor having a source coupled to a drain of the second MOS transistor, a fifth MOS transistor having a source coupled to a drain of the third MOS transistor and a gate of the second MOS transistor, and a gate coupled to a gate of the third MOS transistor and an input node, and a drain coupled to ground, a sixth MOS transistor having a source coupled to a drain of the fourth MOS transistor and a gate of the first MOS transistor and an output node.Type: GrantFiled: March 18, 2016Date of Patent: May 22, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chien-Yuan Chen, Cheng Hung Lee, Hung-Jen Liao, Hau-Tai Shieh, Che-Ju Yeh
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Publication number: 20180090188Abstract: A memory device includes a memory cell, a local bit line, a data line, first and second pass gate circuits, and a sense amplifier. The local bit line is coupled to the memory cell. The first pass gate circuit is coupled to the local bit line and the data line and is configured to couple the local bit line to the data line. The second pass gate circuit is coupled to the data line and the global bit line and is configured to couple the data line to the global bit line. The sense amplifier is coupled to the data line.Type: ApplicationFiled: September 23, 2016Publication date: March 29, 2018Inventors: Yi-Tzu Chen, Anjana Singh, Che-Ju Yeh, Hau-Tai Shieh
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Patent number: 9928888Abstract: A memory device includes a memory cell, a local bit line, a data line, first and second pass gate circuits, and a sense amplifier. The local bit line is coupled to the memory cell. The first pass gate circuit is coupled to the local bit line and the data line and is configured to couple the local bit line to the data line. The second pass gate circuit is coupled to the data line and the global bit line and is configured to couple the data line to the global bit line. The sense amplifier is coupled to the data line.Type: GrantFiled: September 23, 2016Date of Patent: March 27, 2018Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Yi-Tzu Chen, Anjana Singh, Che-Ju Yeh, Hau-Tai Shieh
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Publication number: 20170272075Abstract: A circuit is disclosed. The circuit includes eight MOD transistors and a capacitor, the first MOS transistor having a source coupled to a first predetermined supply voltage (VDDM), a second MOS transistor having a source coupled to a first predetermined supply voltage VDDM, a third MOS transistor having a source coupled to a drain of the first MOS transistor, a fourth MOS transistor having a source coupled to a drain of the second MOS transistor, a fifth MOS transistor having a source coupled to a drain of the third MOS transistor and a gate of the second MOS transistor, and a gate coupled to a gate of the third MOS transistor and an input node, and a drain coupled to ground, a sixth MOS transistor having a source coupled to a drain of the fourth MOS transistor and a gate of the first MOS transistor and an output node.Type: ApplicationFiled: March 18, 2016Publication date: September 21, 2017Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Yuan Chen, Cheng Hung Lee, Hung-Jen Liao, Hau-Tai Shieh, Che-Ju Yeh