Abstract: A semiconductor device includes: a substrate; a channel layer disposed on the substrate, wherein the channel layer is made of GaN; a barrier layer disposed on the channel layer, wherein the barrier layer is made of AlzGa1-zN; and an inserting structure inserted between the channel layer and the barrier layer. The inserting structure includes: a first inserting layer disposed on the channel layer, wherein the first inserting layer is made of AlxGa1-xN; and a second inserting layer disposed on the first inserting layer, wherein the second inserting layer is made of AlyGa1-yN, and y is greater than x. The semiconductor device further includes: a gate electrode disposed on the barrier layer; a source electrode and a drain electrode disposed on the barrier layer and respectively at opposite sides of the gate electrode; and a spike region formed below at least one of the source electrode and the drain electrode.

Abstract: A semiconductor device includes: a substrate; a channel layer disposed on the substrate, wherein the channel layer is made of GaN; a barrier layer disposed on the channel layer, wherein the barrier layer is made of AlzGa1-zN; and an inserting structure inserted between the channel layer and the barrier layer. The inserting structure includes: a first inserting layer disposed on the channel layer, wherein the first inserting layer is made of AlxGa1-xN; and a second inserting layer disposed on the first inserting layer, wherein the second inserting layer is made of AlyGa1-yN, and y is greater than x. The semiconductor device further includes: a gate electrode disposed on the barrier layer; a source electrode and a drain electrode disposed on the barrier layer and respectively at opposite sides of the gate electrode; and a spike region formed below at least one of the source electrode and the drain electrode.

Abstract: A semiconductor structure for improving the thermal stability and Schottky behavior by engineering the stress in a III-nitride semiconductor, comprising a III-nitride semiconductor and a gate metal layer. The III-nitride semiconductor has a top surface on which a conductive area and a non-conductive area are defined. The gate metal layer is formed directly on the top surface of the III-nitride semiconductor and comprises a gate connection line and at least one gate contact extending from the gate connection line in a second direction perpendicular to the length of the gate connection line. The at least one gate contact forms a Schottky contact with the III-nitride semiconductor on the conductive area, and the gate connection line is in direct contact with the III-nitride semiconductor on the non-conductive area. The non-conductive area of the III-nitride semiconductor is at least partially covered by the gate connection line.

Abstract: A GaN-based field effect transistor comprises a semiconductor substrate, an epitaxial structure formed on the semiconductor substrate, a source electrode, a drain electrode, and a gate electrode. The epitaxial structure comprises a buffer layer, a channel layer, a spacer layer, an n-type doped barrier layer, a barrier layer, and a capping layer, sequentially. The epitaxial structure has a source recess and a drain recess. A bottom of the source recess is defined by the n-type doped barrier layer or the spacer layer. A bottom of the drain recess is defined by the n-type doped barrier layer or the spacer layer. The source electrode is formed in the source recess. The drain electrode is formed in the drain recess. The gate electrode is formed on the capping layer between the source electrode and the drain electrode.

Abstract: A semiconductor structure for improving the thermal stability and Schottky behavior by engineering the stress in a III-nitride semiconductor, comprising a III-nitride semiconductor and a gate metal layer. The III-nitride semiconductor has a top surface on which a conductive area and a non-conductive area are defined. The gate metal layer is formed directly on the top surface of the III-nitride semiconductor and comprises a gate connection line and at least one gate contact extending from the gate connection line in a second direction perpendicular to the length of the gate connection line. The at least one gate contact forms a Schottky contact with the III-nitride semiconductor on the conductive area, and the gate connection line is in direct contact with the III-nitride semiconductor on the non-conductive area. The non-conductive area of the III-nitride semiconductor is at least partially covered by the gate connection line.

Abstract: An improved passivation structure for GaN field effect transistor comprising at least one dielectric layer formed on a top surface of a GaN field effect transistor and a passivation layer formed on a top surface of the dielectric layer. The GaN field effect transistor has a gate electrode comprising a Schottky contact metal layer, at least one diffusion barrier metal layer and a high conductivity metal layer. The passivation layer is made of a low cure temperature Polybenzoxazole (PBO) which can be cured at a low-temperature. Thereby the intermixing of the Schottky contact metal layer and the the diffusion barrier metal layer are prevented.

Abstract: A semiconductor structure for improving the gate metal adhesion and the Schottky stability, comprising: a III-nitride semiconductor having a top surface on which a conductive area and a non-conductive area are defined; a source contact metal and a first drain contact metal forming ohmic contact with the III-nitride semiconductor on the conductive area, and the first drain contact metal provided at one side of the source contact metal; and a gate metal layer comprising a gate connection line and a first gate finger extending from the gate connection line, the first gate finger interposing between the source contact metal and the first drain contact metal and forming a Schottky contact with the III-nitride semiconductor on the conductive area, wherein the first gate finger has a first terminal anchor at an end thereof surrounding the source contact metal, and the first terminal anchor has an increased width.

Abstract: A method of fabricating a housing includes: providing a metal member including a base plate and a sidewall, the base plate having an inner surface connected to the sidewall; providing a filler having a connecting surface and a first top surface; fixing the filler onto the metal member to make the connecting surface connect to the inner surface and the first top surface to respectively form first and second included angles larger than 90 degrees and smaller than 180 degrees; providing a film attached with an ink layer, and then performing a process of In-Mold-Roller Injection Molding to form a plastic on the sidewall and the filler, the ink layer attached to the plastic; and removing a part of the filler and a part of the plastic at the sidewall to form a machined surface connected to the inner surface and the upper appearance surface.

Abstract: A method of fabricating a housing includes: providing a metal member including a base plate and a sidewall, the base plate having an inner surface connected to the sidewall; providing a filler having a connecting surface and a first top surface; fixing the filler onto the metal member to make the connecting surface connect to the inner surface and the first top surface to respectively form first and second included angles larger than 90 degrees and smaller than 180 degrees; providing a film attached with an ink layer, and then performing a process of In-Mold-Roller Injection Molding to form a plastic on the sidewall and the filler, the ink layer attached to the plastic; and removing a part of the filler and a part of the plastic at the sidewall to form a machined surface connected to the inner surface and the upper appearance surface.

Abstract: A method of fabricating a housing includes: providing a metal member including a base plate and a sidewall, the base plate having an inner surface connected to the sidewall; providing a filler having a connecting surface and a first top surface; fixing the filler onto the metal member to make the connecting surface connect to the inner surface and the first top surface to respectively form first and second included angles larger than 90 degrees and smaller than 180 degrees; providing a film attached with an ink layer, and then performing a process of In-Mold-Roller Injection Molding to form a plastic on the sidewall and the filler, the ink layer attached to the plastic; and removing a part of the filler and a part of the plastic at the sidewall to form a machined surface connected to the inner surface and the upper appearance surface.

Abstract: A fixing sheet adapted for fixing a battery to a body of an electronic apparatus is provided. The fixing sheet includes a structure layer having a first portion, a second portion and a split line. The first portion is adapted to be adhered to the battery. The second portion is structurally connected to the first portion and adapted to be adhered to the body. The split line is located at a common border of the first portion and the second portion. The first portion is capable of being forced relative to the second portion once the battery is forced relative to the body, so as to separate the first portion and the second portion along the split line. An electronic apparatus having the fixing sheet is also provided.

Abstract: A method of fabricating a housing includes: providing a metal member including a base plate and a sidewall, the base plate having an inner surface connected to the sidewall; providing a filler having a connecting surface and a first top surface; fixing the filler onto the metal member to make the connecting surface connect to the inner surface and the first top surface to respectively form first and second included angles larger than 90 degrees and smaller than 180 degrees; providing a film attached with an ink layer, and then performing a process of In-Mold-Roller Injection Molding to form a plastic on the sidewall and the filler, the ink layer attached to the plastic; and removing a part of the filler and a part of the plastic at the sidewall to form a machined surface connected to the inner surface and the upper appearance surface.

Abstract: A handheld electronic device includes a first body, a second body, and a locating member. The second body is slidably connected to the first body, and has a slide surface and a locating opening. The locating opening is located at an end of the slide surface. The locating member has an elastic portion and a sliding portion, the elastic portion is disposed between the first body and the sliding portion, and the sliding portion is capable of leaning against the slide surface or being inserted in the locating opening under an elastic prestress of the elastic portion.

Abstract: A fixing sheet adapted for fixing a battery to a body of an electronic apparatus is provided. The fixing sheet includes a structure layer having a first portion, a second portion and a split line. The first portion is adapted to be adhered to the battery. The second portion is structurally connected to the first portion and adapted to be adhered to the body. The split line is located at a common border of the first portion and the second portion. The first portion is capable of being forced relative to the second portion once the battery is forced relative to the body, so as to separate the first portion and the second portion along the split line. An electronic apparatus having the fixing sheet is also provided.

Abstract: A handheld electronic device includes a first body, a second body, and a locating member. The second body is slidably connected to the first body, and has a slide surface and a locating opening. The locating opening is located at an end of the slide surface. The locating member has an elastic portion and a sliding portion, the elastic portion is disposed between the first body and the sliding portion, and the sliding portion is capable of leaning against the slide surface or being inserted in the locating opening under an elastic prestress of the elastic portion.

Abstract: A multi-layer structure with a transparent gate includes a MHEMT device structure comprising a GaAs substrate, a Schottky layer and a cap layer formed on the Schottky layer; a transparent gate formed on the Schottky layer being an indium tin oxide, ITO; and a drain and a source formed on the cap layer. Moreover, the MHEMT device structure includes a graded buffer, a buffer layer, a first spacer layer, a channel layer, and a second spacer layer formed between the GaAs substrate and the Schottky layer in a stacked fashion. The multi-layer structure is a transparent gate HEMT employing indium tin oxide which can make HEMT more sensitive to the light wave.

Abstract: A multi-layer structure with a transparent gate includes a MHEMT device structure comprising a GaAs substrate, a Schottky layer and a cap layer formed on the Schottky layer; a transparent gate formed on the Schottky layer being an indium tin oxide, ITO; and a drain and a source formed on the cap layer. Moreover, the MHEMT device structure includes a graded buffer, a buffer layer, a first spacer layer, a channel layer, and a second spacer layer formed between the GaAs substrate and the Schottky layer in a stacked fashion. The multi-layer structure is a transparent gate HEMT employing indium tin oxide which can make HEMT more sensitive to the light wave.