Abstract: The present disclosure is directed to techniques of zone-based target control in chemical mechanical polishing of wafers. Multiple zones are identified on a surface of a wafer. The CMP target is achieved on each zone in a sequence of CMP processes. Each CMP process in the sequence achieves the CMP target for only one zone, using a CMP process selective to other zones.

Abstract: The current disclosure provides a semiconductor fabrication method that defines the height of gate structures at the formation of the gate structure. A gate line-end region is formed by removing a portion of a gate structure. A resulted recess is filled with a dielectric material is chosen to have a material property suitable for a later contact formation process of forming a metal contact. A metal contact structure is formed through the recess filling dielectric layer to connect to a gate structure and/or a source/drain region.

Abstract: The current disclosure provides a semiconductor fabrication method that defines the height of gate structures at the formation of the gate structure. A gate line-end region is formed by removing a portion of a gate structure. A resulted recess is filled with a dielectric material is chosen to have a material property suitable for a later contact formation process of forming a metal contact. A metal contact structure is formed through the recess filling dielectric layer to connect to a gate structure and/or a source/drain region.

Abstract: The present disclosure is directed to techniques of zone-based target control in chemical mechanical polishing of wafers. Multiple zones are identified on a surface of a wafer. The CMP target is achieved on each zone in a sequence of CMP processes. Each CMP process in the sequence achieves the CMP target for only one zone, using a CMP process selective to other zones.

Abstract: The current disclosure provides a semiconductor fabrication method that defines the height of gate structures at the formation of the gate structure. A gate line-end region is formed by removing a portion of a gate structure. A resulted recess is filled with a dielectric material is chosen to have a material property suitable for a later contact formation process of forming a metal contact. A metal contact structure is formed through the recess filling dielectric layer to connect to a gate structure and/or a source/drain region.

Abstract: A method for polishing a polishing pad includes detecting a presence of a defect formed on a groove of a polishing pad; removing the defect from the groove of the polishing pad; after removing the defect, measuring a remaining depth of the groove; and based on the measured remaining depth of the groove, applying a polishing condition on the groove.

Abstract: In an embodiment, a method includes: forming a gate stack on a semiconductor fin, the gate stack having gate spacers along opposing sides of the gate stack; forming source/drain regions adjacent the gate stack; recessing the gate stack to form a first recess between the gate spacers; depositing a dielectric layer over the gate stack in the first recess; forming a first metal mask over the dielectric layer and the gate stack in the first recess; etching back the dielectric layer and the gate spacers to form a dielectric mask under the first metal mask; depositing a conductive material over the first metal mask and adjacent the gate stack; and planarizing the conductive material to form contacts electrically connected to the source/drain regions, top surfaces of the contacts and the dielectric mask being level.

Abstract: A method for polishing a polishing pad includes detecting a presence of a defect formed on a groove of a polishing pad; removing the defect from the groove of the polishing pad; after removing the defect, measuring a remaining depth of the groove; and based on the measured remaining depth of the groove, applying a polishing condition on the groove.

Abstract: A method for polishing a polishing pad includes detecting, by a first sensor, a presence of a defect formed on a groove of a polishing pad; removing, by a polishing disc, the defect from the groove of the polishing pad; after removing the defect, measuring, by a second sensor, a remaining depth of the groove; and based on the measured remaining depth of the groove, applying, through the polishing disc, a polishing condition on the groove.

Abstract: A method for polishing a polishing pad includes detecting, by a first sensor, a presence of a defect formed on a groove of a polishing pad; removing, by a polishing disc, the defect from the groove of the polishing pad; after removing the defect, measuring, by a second sensor, a remaining depth of the groove; and based on the measured remaining depth of the groove, applying, through the polishing disc, a polishing condition on the groove.