Abstract: The present invention provides a film forming apparatus capable of enabling source gases to isotropically flow and reducing the size of its chamber. When a susceptor with substrate holders containing substrates moves downward, the substrate holders are combined with a clutch mechanism. When a driving motor runs, a rotating shaft conformably rotates. The rotation is transmitted to a central gear through the clutch mechanism so as to rotate the central gear. Thus, the substrate holder whose peripheral surface is engaged with the center gear accordingly rotates so as to rotate the substrates. When the driving motor runs, a revolving shaft conformably rotates. The rotation is transmitted to the susceptor through a revolving clutch mechanism so as to rotate the susceptor and revolve the substrates. Process gases are fed via an inlet so that expected films are formed on the substrates when the substrates are at rotation and revolution statuses.

Abstract: The present invention relates to a gas distributing injector applied in MOCVD reactor. The gas distributing injector comprises at least one gas distributing layer for distributing different gases. The distributing layer is a single-layered structure. The distributing layer comprises a disk-shaped body, a plurality of first gas channels, a plurality of second gas channels, and a plurality of third gas channels. The first gas channels, the second gas channels, and the third gas channels are radially distributed on the same plane in the disk-shaped body. Different gases are distributed or fed into different gas channels (such as the first gas channels, the second gas channels, and the third gas channels) and transported by different gas channels. Through different gas channels, different gases are transversely injected into the MOCVD reactor on the same plane respectively. Therefore, the gas distributing injector of this invention can distribute different gases by a single-layered structure.

Abstract: A system for manufacturing semiconductor epitaxy structure includes a deposition apparatus, a curvature monitor system and a control unit. The deposition apparatus is configured for sequentially depositing a buffer layer, a first epitaxy layer, an insertion layer, a second epitaxy layer on a substrate. The curvature monitor system is configured for monitoring a curvature value of the semiconductor epitaxy structure. The control unit is configured for controlling the deposition apparatus to stop depositing the buffer layer, the first epitaxy layer, the insertion layer and the second epitaxy layer according to the curvature value of the semiconductor epitaxy structure measured by the curvature monitor system. The above-mentioned system for manufacturing semiconductor epitaxy structure is able to effectively control the strain of the semiconductor epitaxy structure during growth. A method for manufacturing semiconductor epitaxy structure is also disclosed.

Abstract: A system for manufacturing semiconductor epitaxy structure includes a deposition apparatus, a curvature monitor system and a control unit. The deposition apparatus is configured for sequentially depositing a buffer layer, a first epitaxy layer, an insertion layer, a second epitaxy layer on a substrate. The curvature monitor system is configured for monitoring a curvature value of the semiconductor epitaxy structure. The control unit is configured for controlling the deposition apparatus to stop depositing the buffer layer, the first epitaxy layer, the insertion layer and the second epitaxy layer according to the curvature value of the semiconductor epitaxy structure measured by the curvature monitor system. The above-mentioned system for manufacturing semiconductor epitaxy structure is able to effectively control the strain of the semiconductor epitaxy structure during growth. A method for manufacturing semiconductor epitaxy structure is also disclosed.

Abstract: A semiconductor device includes a substrate, a buffer layer and a device layer. The buffer layer is deposited on the substrate and comprises at least one gallium nitride (GaN) epitaxy layer and at least one insertion layer deposited on the GaN epitaxy layer, wherein the GaN epitaxy layer adjacent to an interface between the GaN epitaxy layer and the upper insertion layer is doped with a trapping electron element. The device layer is formed on the buffer layer. According to the foregoing structure, electrons in the GaN epitaxy layer is trapped and then the electron mobility is reduced, so that leakage current from the buffer layer is suppressed and then the performance of the semiconductor device can be enhanced. A manufacturing method for the semiconductor device is also disclosed.

Abstract: A system for manufacturing semiconductor epitaxy structure includes a deposition apparatus, a curvature monitor system and a control unit. The deposition apparatus is configured for sequentially depositing a buffer layer, a first epitaxy layer, an insertion layer, a second epitaxy layer on a substrate. The curvature monitor system is configured for monitoring a curvature value of the semiconductor epitaxy structure. The control unit is configured for controlling the deposition apparatus to stop depositing the buffer layer, the first epitaxy layer, the insertion layer and the second epitaxy layer according to the curvature value of the semiconductor epitaxy structure measured by the curvature monitor system. The above-mentioned system for manufacturing semiconductor epitaxy structure is able to effectively control the strain of the semiconductor epitaxy structure during growth. A method for manufacturing semiconductor epitaxy structure is also disclosed.