Abstract: Semiconductor devices including fin-shaped isolation structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a fin extending from a semiconductor substrate; a shallow trench isolation (STI) region over the semiconductor substrate adjacent the fin; and a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the fin, the dielectric fin structure including a first liner layer in contact with the STI region; and a first fill material over the first liner layer, the first fill material including a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material, a first carbon concentration in the lower portion of the first fill material being greater than a second carbon concentration in an upper portion of the first fill material.

Abstract: Systems, devices and methods of manufacturing a system on silicon wafer (SoSW) device and package are described herein. A plurality of functional dies is formed in a silicon wafer. Different sets of masks are used to form different types of the functional dies in the silicon wafer. A first redistribution structure is formed over the silicon wafer and provides local interconnects between adjacent dies of the same type and/or of different types. A second redistribution structure may be formed over the first redistribution layer and provides semi-global and/or global interconnects between non-adjacent dies of the same type and/or of different types. An optional backside redistribution structure may be formed over a second side of the silicon wafer opposite the first redistribution layer. The optional backside redistribution structure may provide backside interconnects between functional dies of different types.

Abstract: A wound dressing includes a substrate, an insulating layer, at least one ion sustainable-released body, and at least one electrode. The insulating layer is disposed on the substrate, with the at least one ion sustainable-released body being uniformly disposed at the insulating layer. The ion sustainable-released body includes ions. The electrode is disposed on the insulating layer, and the electrode and the ions are functioned as an electron donor and an electron acceptor respectively.

Abstract: The disclosure provides a self-powered sheet which is configured to absorb a liquid content and to be applied on a human skin. The self-powered sheet includes a base layer and a plurality of electrically conductive inks. The base layer is configured to absorb the liquid content and adapted to be applied on the human skin. The base layer has a contact surface. The electrically conductive inks are disposed on the contact surface of the base layer. Each of the electrically conductive inks has a plurality of first electrodes and a plurality of second electrodes. When each of the first electrodes and each of the second electrodes are soaked in the liquid content, an electrical potential difference between one of the plurality of first electrodes and one of the plurality of second electrodes generates a current in the human skin.

Abstract: The disclosure provides a self-powered sheet which is configured to absorb and to be applied on a human skin. The self-powered sheet includes a base layer and a plurality of electrically conductive inks. The base layer is configured to absorb the liquid and adapted to be applied on the human skin. The base layer has a contact surface. The electrically conductive inks are disposed on the contact surface of the base layer. Each of the electrically conductive inks has a plurality of first electrodes and a plurality of second electrodes. When each of the first electrodes and each of the second electrodes are soaked in the liquid, an electrical potential difference between one of the plurality of first electrodes and one of the plurality of second electrodes generate a current in the human skin.