Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: A first layer is formed over a substrate; a second layer is formed over the first layer; and a third layer is formed over the second layer. The first and third layers each have a first semiconductor element; the second layer has a second semiconductor element different from the first semiconductor element. The second layer has the second semiconductor element at a first concentration in a first region and at a second concentration in a second region of the second layer. A source/drain trench is formed in a region of the stack to expose side surfaces of the layers. A first portion of the second layer is removed from the exposed side surface to form a gap between the first and the third layers. A spacer is formed in the gap. A source/drain feature is formed in the source/drain trench and on a sidewall of the spacer.

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: A data collection system that performs data collection of human-driven robot actions for robot learning. The data collection system includes: i) a wearable computation subsystem that is worn by a human data collector and that controls the data collection process and ii) a human-machine operation interface subsystem that allows the human data collector to use the human-machine operation interface to operate an attached robotic gripper to perform one or more actions. A user interface subsystem receives instructions from the wearable computation subsystem that direct the human data collector to perform the one or more actions using the human-machine operation interface subsystem. A visual sensing subsystem includes one or more cameras that collect raw visual data related to the pose and movement of the robotic gripper while performing the one or more actions. A data collection subsystem receives collected data related to the one or more actions.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: A data collection system that performs data collection of human-driven robot actions for robot learning. The data collection system includes: i) a wearable computation subsystem that is worn by a human data collector and that controls the data collection process and ii) a human-machine operation interface subsystem that allows the human data collector to use the human-machine operation interface to operate an attached robotic gripper to perform one or more actions. A user interface subsystem receives instructions from the wearable computation subsystem that direct the human data collector to perform the one or more actions using the human-machine operation interface subsystem. A visual sensing subsystem includes one or more cameras that collect raw visual data related to the pose and movement of the robotic gripper while performing the one or more actions. A data collection subsystem receives collected data related to the one or more actions.

Abstract: A data collection system that performs data collection of human-driven robot actions for robot learning. The data collection system includes: i) a wearable computation subsystem that is worn by a human data collector and that controls the data collection process and ii) a human-machine operation interface subsystem that allows the human data collector to use the human-machine operation interface to operate an attached robotic gripper to perform one or more actions. A user interface subsystem receives instructions from the wearable computation subsystem that direct the human data collector to perform the one or more actions using the human-machine operation interface subsystem. A visual sensing subsystem includes one or more cameras that collect raw visual data related to the pose and movement of the robotic gripper while performing the one or more actions. A data collection subsystem receives collected data related to the one or more actions.

Abstract: A material property rating method and a material property rating system are provided, which analyze the reliability of a target information of a target object provided by a target source through an analysis module, and then calculates the credibility of the target source based on the reliability of the target information through a credit rating module. Therefore, when the material property rating system is applied to a material information platform, the material property rating system can effectively avoid false information, and can save time and effort for the verification process, and can be trusted by consumers browsing the material information platform.

Abstract: A material recommendation system and a material recommendation method are provided, which use an analysis module to analyze at least one image to generate reference information, and then a recommendation module receives the reference information to provide target information corresponding to the reference information. By analyzing the image, target information including suitable materials can be quickly provided, thereby greatly accelerating the timeline of product development.

Abstract: A joint for furniture includes furniture piece that has a first hole that extends through a surface of the furniture piece and out the furniture piece, and that has a second hole with an opening in the furniture piece. A leg is fitted to the furniture piece. The leg has a hole. A curved tenon piece includes a head. The curved tenon piece is curved sufficiently to allow the curved tenon to enter the first hole through the surface of the furniture piece, to exit the first hole, to extend through the hole in the leg and to enter into the second hole so that the head leg is held snugly to the furniture piece by the curved tenon piece.

Abstract: A joint for furniture includes furniture piece that has a first hole that extends through a surface of the furniture piece and out the furniture piece, and that has a second hole with an opening in the furniture piece. A leg is fitted to the furniture piece. The leg has a hole. A curved tenon piece includes a head. The curved tenon piece is curved sufficiently to allow the curved tenon to enter the first hole through the surface of the furniture piece, to exit the first hole, to extend through the hole in the leg and to enter into the second hole so that the head leg is held snugly to the furniture piece by the curved tenon piece.

Abstract: A mortise and tenon joint for furniture, includes a mortise piece and a tenon piece. The mortise piece includes a cut-out region. The cut-out region includes a surface. A mortise is located at the cut-out region. A tenon piece includes a tenon sized to fit within the mortise. The tenon piece has a surface that matches the surface of the cut-out region so that when the tenon is within the mortise, the tenon piece can be rotated into a first orientation so that the surface of the tenon piece is flush with the surface of the cut-out region, and the tenon piece can be rotated into a second orientation so that the surface of the tenon piece is not flush with the surface of the cut-out region.

Abstract: A sound absorbing material according to the present disclosure is provided, which includes a polymeric body having a first end, a second end opposed to the first end, and a plurality of branched passages connected to the first end and extending toward a direction of the second end. The plurality of branched passages have an average spacing of 5 ?m to 50 ?m therebetween and an average width of 5 ?m to 50 ?m.

Abstract: A bio-sensing semiconductor structure is provided. A transistor includes a channel region and a gate underlying the channel region. A first dielectric layer overlies the transistor. A first opening extends through the first dielectric layer to expose the channel region. A bio-sensing layer lines the first opening and covers an upper surface of the channel region. A second dielectric layer lines the first opening over the bio-sensing layer. A second opening within the first opening extends to the bio-sensing layer, through a region of the second dielectric layer overlying the channel region. A method for manufacturing the bio-sensing semiconductor structure is also provided.

Abstract: Small cell deployment may be provided. First, access point data may be captured by a technician device from an access point. Next, the access point data may be transmitted from the technician device to a backend server. The technician device may then receive post-check results corresponding to the access point from the backend server. The post-check results may be based on the transmitted access point data.

Abstract: A mortise and tenon joint for furniture, includes a mortise piece and a tenon piece. The mortise piece includes a cut-out region. The cut-out region includes a surface. A mortise is located at the cut-out region. A tenon piece includes a tenon sized to fit within the mortise. The tenon piece has a surface that matches the surface of the cut-out region so that when the tenon is within the mortise, the tenon piece can be rotated into a first orientation so that the surface of the tenon piece is flush with the surface of the cut-out region, and the tenon piece can be rotated into a second orientation so that the surface of the tenon piece is not flush with the surface of the cut-out region.

Abstract: The present disclosure relates to an integrated chip having an integrated bio-sensor with a sensing well having one or more sensing well spacers that reduce a size of the sensing well after its formation. In some embodiments, the integrated bio-sensor has a sensing device disposed within a semiconductor substrate. A dielectric structure is disposed onto a first side of the semiconductor substrate. The dielectric structure has an opening with a first width, which is exposed to an ambient environment and that overlies the sensing device. One or more sensing well spacers are arranged on sidewalls of the opening. The one or more sensing well spacers expose a bottom surface of the opening to define a sensing well having a second width that is smaller than the first width.

Abstract: A bio-sensing semiconductor structure is provided. A transistor includes a channel region and a gate underlying the channel region. A first dielectric layer overlies the transistor. A first opening extends through the first dielectric layer to expose the channel region. A bio-sensing layer lines the first opening and covers an upper surface of the channel region. A second dielectric layer lines the first opening over the bio-sensing layer. A second opening within the first opening extends to the bio-sensing layer, through a region of the second dielectric layer overlying the channel region. A method for manufacturing the bio-sensing semiconductor structure is also provided.