Abstract: A memory controller receives a command to program information to a memory storage array controlled by the memory controller. The memory controller determines a target memory state to store the information, and a target threshold voltage level corresponding to the target memory state. Based at least on the target memory state, the memory controller determines one or more program pulses for a pre-program cycle, including voltage levels for the one or more program pulses based at least on the target threshold voltage level. The memory controller selects a memory location in the memory storage array to program the information, and pre-programs the selected memory location by applying the one or more program pulses at respective voltage levels, the one or more program pulses applied without program verify operations. Following the pre-programming, the memory controller programs the information to the selected memory location.

Abstract: A flash memory and an operation method thereof are provided. The flash memory includes a plurality of memory cell strings and a pass voltage generator. Each of the memory cell strings includes a plurality of memory cells. The pass voltage generator is configured to provide a pass voltage to a plurality of word lines of a plurality of unselected memory cells of a selected memory string. During a reading operation, the pass voltage generator raises the pass voltage from a first voltage at a first time point, and raises the pass voltage to a second voltage at a second time point. The second voltage is lower than a target voltage times a preset ratio The first time point is earlier than a start time point of a bit line voltage received by the selected memory cell, and the second time point occurs at the start time point of the bit line voltage.

Abstract: A dynamic trim method includes testing a selected number of cells on a die with predetermined testing margins. Data from this testing is used to determine dynamic reference margins for improving yield. Advantageously, yield is improved by allowing functioning fast or slow units to pass wafer sort by applying the dynamic reference margins for varying processes.

Abstract: A dynamic trim method includes testing a selected number of cells on a die with predetermined testing margins. Data from this testing is used to determine dynamic reference margins for improving yield. Advantageously, yield is improved by allowing functioning fast or slow units to pass wafer sort by applying the dynamic reference margins for varying processes.