Patents by Inventor Che-Rong Laing

Che-Rong Laing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Defect monitoring for resist layer
    Patent number: 8852673
    Abstract: Methods for detecting and monitoring defects in a resist material are disclosed. In an example, a method includes forming a resist layer over a substrate; developing the resist layer; washing the developed resist layer with a thinner wash solution, wherein the washing reveals any negatively charged defects in the developed resist layer; and after the washing, inspecting for the negatively charged defects.
    Type: Grant
    Filed: November 1, 2011
    Date of Patent: October 7, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Che-Rong Laing, Li-Kong Turn, Yung-Yao Lee, Ping-Hsi Yang
  • DEFECT MONITORING FOR RESIST LAYER
    Publication number: 20130108775
    Abstract: Methods for detecting and monitoring defects in a resist material are disclosed. In an example, a method includes forming a resist layer over a substrate; developing the resist layer; washing the developed resist layer with a thinner wash solution, wherein the washing reveals any negatively charged defects in the developed resist layer; and after the washing, inspecting for the negatively charged defects.
    Type: Application
    Filed: November 1, 2011
    Publication date: May 2, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Che-Rong Laing, Li-Kong Turn, Yung-Yao Lee, Ping-Hsi Yang
  • Semiconductor structures
    Patent number: 7728396
    Abstract: A method and a structure are provided for preventing lift-off of a semiconductor monitor pattern from a substrate. A semiconductor structure and a semiconductor monitor structure are formed on a substrate. A material layer is formed covering the semiconductor monitor structure. A part of the semiconductor structure is removed without removing the semiconductor monitor structure, by using the material layer as an etch protection layer. A mask for the method is also provided. The mask includes a clear area and a dark area. The dark area prevents a semiconductor monitor structure from being subjected to exposure so as to form a material layer covering the semiconductor monitor structure and prevent removal of the semiconductor monitor structure from the substrate while a part of a semiconductor structure is removed.
    Type: Grant
    Filed: March 9, 2007
    Date of Patent: June 1, 2010
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hua-Shu Wu, Tsung-Mu Lai, Ming-Chih Chang, Che-Rong Laing
  • SEMICONDUCTOR STRUCTURES
    Publication number: 20070145366
    Abstract: A method and a structure are provided for preventing lift-off of a semiconductor monitor pattern from a substrate . A semiconductor structure and a semiconductor monitor structure are formed on a substrate. A material layer is formed covering the semiconductor monitor structure. A part of the semiconductor structure is removed without removing the semiconductor monitor structure, by using the material layer as an etch protection layer. A mask for the method is also provided. The mask includes a clear area and a dark area. The dark area prevents a semiconductor monitor structure from being subjected to exposure so as to form a material layer covering the semiconductor monitor structure and prevent removal of the semiconductor monitor structure from the substrate while a part of a semiconductor structure is removed.
    Type: Application
    Filed: March 9, 2007
    Publication date: June 28, 2007
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hua-Shu Wu, Tsung-Mu Lai, Ming-Chih Chang, Che-Rong Laing
  • Semiconductor methods and structures
    Patent number: 7198975
    Abstract: A method and a structure are provided for preventing lift-off of a semiconductor monitor pattern from a substrate. A semiconductor structure and a semiconductor monitor structure are formed on a substrate. A material layer is formed covering the semiconductor monitor structure. A part of the semiconductor structure is removed without removing the semiconductor monitor structure, by using the material layer as an etch protection layer. A mask for the method is also provided. The mask includes a clear area and a dark area. The dark area prevents a semiconductor monitor structure from being subjected to exposure so as to form a material layer covering the semiconductor monitor structure and prevent removal of the semiconductor monitor structure from the substrate while a part of a semiconductor structure is removed.
    Type: Grant
    Filed: December 21, 2004
    Date of Patent: April 3, 2007
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Hua-Shu Wu, Tsung-Mu Lai, Ming-Chih Chang, Che-Rong Laing
  • Semiconductor methods and structures
    Publication number: 20060131697
    Abstract: A method and a structure are provided for preventing lift-off of a semiconductor monitor pattern from a substrate. A semiconductor structure and a semiconductor monitor structure are formed on a substrate. A material layer is formed covering the semiconductor monitor structure. A part of the semiconductor structure is removed without removing the semiconductor monitor structure, by using the material layer as an etch protection layer. A mask for the method is also provided. The mask includes a clear area and a dark area. The dark area prevents a semiconductor monitor structure from being subjected to exposure so as to form a material layer covering the semiconductor monitor structure and prevent removal of the semiconductor monitor structure from the substrate while a part of a semiconductor structure is removed.
    Type: Application
    Filed: December 21, 2004
    Publication date: June 22, 2006
    Inventors: Hua-Shu Wu, Tsung-Mu Lai, Ming-Chih Chang, Che-Rong Laing