Abstract: An image sensor includes a substrate including a first surface and a second surface opposite to the first surface; a plurality of pixel sensors disposed in the substrate, a sensor isolation feature disposed in the substrate defining an active region, and a dielectric layer between the sensor isolation feature and the substrate, wherein the sensor isolation feature comprises a conductive material.

Abstract: In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.

Abstract: In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.

Abstract: In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.

Abstract: A semiconductor device and methods of formation are provided. The semiconductor device includes a first metal alloy over a first active region of a fin and a second metal alloy over a second active region of the fin. A conductive layer is over a channel region of the fin. A semiconductive layer is over the conductive layer. The conductive layer over the channel region suppresses current leakage and the semiconductive layer over the conductive layer reduces electro flux from a source to a drain, as compared to a channel region that does not have such a conductive layer or a semiconductive layer over a conductive layer. The semiconductor device having the first metal alloy as at least one of the source or drain requires a lower activation temperature than a semiconductor device that does not have a metal alloy as a source or a drain.

Abstract: A semiconductor device and methods of formation are provided. The semiconductor device includes a first metal alloy over a first active region of a fin and a second metal alloy over a second active region of the fin. A conductive layer is over a channel region of the fin. A semiconductive layer is over the conductive layer. The conductive layer over the channel region suppresses current leakage and the semiconductive layer over the conductive layer reduces electro flux from a source to a drain, as compared to a channel region that does not have such a conductive layer or a semiconductive layer over a conductive layer. The semiconductor device having the first metal alloy as at least one of the source or drain requires a lower activation temperature than a semiconductor device that does not have a metal alloy as a source or a drain.

Abstract: An external strobe device for connecting to an image-capturing apparatus. The image capturing apparatus includes a housing, a second electrical port, and a first signal port. The external strobe device includes a housing, a strobe module, a battery module, a first electrical port for connecting to the second electrical port and transmitting electric power produced by the battery module to the second electrical port to supply the electric power of the image-capturing apparatus, and a transformer for transforming an output voltage of the battery module into a standard voltage of the strobe module and into the standard voltage of the image-capturing apparatus.