Abstract: A memory with built-in synchronous-write-through (SWT) redundancy includes a plurality of memory input/output (IO) arrays, a plurality of SWT circuits, and at least one spare SWT circuit. The at least one spare SWT circuit is used to replace at least one of the plurality of SWT circuits that is defective.

Abstract: A delay measurement circuit includes a transporting path selector, first and second delay measurement devices, and a controller. The delay measurement circuit forms a plurality of transporting loops through two of a first reference transporting conductive wire, a second reference transporting conductive wire, and a tested transporting conductive wire according to a control signal. The first delay measurement device respectively measures part of the transporting loops to obtain a plurality first transporting delays. The second delay measurement device respectively measures part of the transporting loops to obtain a plurality second transporting delays. The controller generates the control signal, and obtains a transporting delay of the tested transporting conductive wire according to the first transporting delays and the second transporting delays.

Abstract: A delay measurement circuit includes a transporting path selector, first and second delay measurement devices, and a controller. The delay measurement circuit forms a plurality of transporting loops through two of a first reference transporting conductive wire, a second reference transporting conductive wire, and a tested transporting conductive wire according to a control signal. The first delay measurement device respectively measures part of the transporting loops to obtain a plurality first transporting delays. The second delay measurement device respectively measures part of the transporting loops to obtain a plurality second transporting delays. The controller generates the control signal, and obtains a transporting delay of the tested transporting conductive wire according to the first transporting delays and the second transporting delays.

Abstract: A three-dimensional (3-D) memory includes: multiple memory dies, each having at least one memory bank and a built-in self-test (BIST) circuit; and a plurality of channels, for electrically connecting the memory dies. In a synchronous test, one of the memory dies is selected as a master die. The BIST circuit of the master die sends an enable signal via the channels to the memory dies under test. The BIST circuit in each of the memory dies is for testing memory banks on the same memory die or on different memory dies.

Abstract: A three-dimensional (3-D) memory includes: multiple memory dies, each having at least one memory bank and a built-in self-test (BIST) circuit; and a plurality of channels, for electrically connecting the memory dies. In a synchronous test, one of the memory dies is selected as a master die. The BIST circuit of the master die sends an enable signal via the channels to the memory dies under test. The BIST circuit in each of the memory dies is for testing memory banks on the same memory die or on different memory dies.