Patents by Inventor Che-Yang Lin

Che-Yang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240113203
    Abstract: A method includes providing a fin extending from a substrate, the fin including a plurality of semiconductor channel layers, and where a gate is disposed over the fin. A first spacer layer is deposited over the gate and over the fin in a source/drain region. The first spacer layer has a first etch rate. A second spacer layer is deposited over the first spacer layer. The second spacer layer has a second etch rate less than the first etch rate. The plurality of semiconductor channel layers are removed from the source/drain region to form a trench having a funnel shape. After forming the trench, inner spacers are formed along a sidewall surface of the trench. In various embodiments, lateral sidewall surfaces of each semiconductor channel layer of the plurality of semiconductor channel layers is substantially free of an inner spacer material.
    Type: Application
    Filed: January 25, 2023
    Publication date: April 4, 2024
    Inventors: Che-Lun CHANG, Wei-Yang LEE, Chia-Pin LIN
  • Patent number: 11935781
    Abstract: An integrated circuit (IC) structure includes a gate structure, a source epitaxial structure, a drain epitaxial structure, a front-side interconnection structure, a backside dielectric layer, and a backside via. The source epitaxial structure and the drain epitaxial structure are respectively on opposite sides of the gate structure. The front-side interconnection structure is on a front-side of the source epitaxial structure and a front-side of the drain epitaxial structure. The backside dielectric layer is on a backside of the source epitaxial structure and a backside of the drain epitaxial structure and has an air gap therein. The backside via extends through the backside dielectric layer to a first one of the source epitaxial structure and the drain epitaxial structure.
    Type: Grant
    Filed: July 28, 2022
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Che-Lun Chang, Wei-Yang Lee, Chia-Pin Lin, Yuan-Ching Peng
  • Publication number: 20060099617
    Abstract: The present invention relates to a method for testing the presence or absence of an animal-derived ingredient(s) in food, which comprises the step of (i) detecting whether a DNA fragment highly reserved among animals is present, and optionally the step of (ii) detecting whether a DNA fragment highly reserved among mammals and poultry is present, and optionally the step of (iii) detecting whether a DNA fragment highly reserved in a specific animal species is present.
    Type: Application
    Filed: September 23, 2005
    Publication date: May 11, 2006
    Applicant: Bureau of Food and Drug Analysis, Department of Health, Executive Yuan
    Inventors: Yang-Chih Shih, Lih-Ching Chiueh, Hsu-Yang Lin, Che-Yang Lin, Tsung-Hsi Wu, Yuan-Hsin Chang