Patents by Inventor Che-Yuan Hsu, deseased

Che-Yuan Hsu, deseased has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11387109
    Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.
    Type: Grant
    Filed: March 5, 2021
    Date of Patent: July 12, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Che-Lun Chang, Pin-Chuan Su, Hsin-Chieh Huang, Ming-Yuan Wu, Tzu kai Lin, Yu-Wen Wang, Che-Yuan Hsu, deseased