Abstract: Level shifters capable of setting logic level of the output signals thereof to a pre-defined known state during power-up are provided, in which a first logic unit is powered by a first power voltage, receives input signals with a core power voltage and comprises first and second output terminals. First and second drivers are coupled between the first output terminal and the first power voltage and between the second output terminal and the second power voltage respectively. When one of the first and second power voltages is not ready during power-up, the first driver matches a voltage level on the first output terminal with the first power voltage by AC coupling and the second driver pulls low or maintains a voltage level on the second output terminal.

Abstract: A bi-directional buffer is provided. The buffer includes a driver, a receiver, and a circuitry configured to select a driving mode in response to detecting a first condition and to select a receiving mode in response to detecting a second condition. The driving mode has a first impedance and the receiving mode has a second impedance. The second impedance is partially contributed from the driver.

Abstract: A semiconductor device is provided by the present invention. The semiconductor device includes a semiconductor die, and the semiconductor die includes a die core having at least two bond pads with voltage level equivalent to each other and electrically connected to each other via at least a bond wire, and an input/output (I/O) periphery. The semiconductor device of the present invention is capable of solving the IR drop of the semiconductor die with low cost.

Abstract: A calibration circuit including a plurality of first resistance components, a plurality of second resistance components, and a first feedback system is provided. The first feedback system selects M1 first resistance components and N1 second resistance components so that a first combination of the M1 first resistance components and the N1 second resistance components has a first predetermined relationship with the impedance of a first resistor. The first feedback system selects M2 first resistance components and N2 second resistance components so that a second combination of the M2 first resistance components and the N2 second resistance components has a second predetermined relationship with the impedance of the first resistor. Based on the values of M1, N1, M2, N2, and a target impedance, the first feedback system generates a first set of calibration signals for a plurality of third resistance components and generates a second set of calibration signals for a plurality of fourth resistance components.

Abstract: An integrated circuit includes: a substrate; and a bond pad array on the substrate. The bond pad array includes: a row of inner bond pads, each inner bond pad positioned with respect to a plurality of inner pad openings; a plurality of first inner metal layers respectively coupled to the inner bond pads for transmitting signals between the inner pads and an internal circuit, where at least one first inner metal layer has a width less than a width of a corresponding inner bond pad; a row of outer bond pads, staggered with respect to the row of inner bond pads; and a plurality of first outer metal layers respectively coupled to the outer bond pads for transmitting signals between the outer pads and the internal circuit, where at least one inner bond pad overlaps adjacent first outer metal layers.

Abstract: A bond pad arrangement method of a semiconductor die is provided. The bond pad arrangement method includes: determining a bond pad architecture including a plurality of bond pads at a peripheral region of the semiconductor die, where each of the bond pads is defined to have a predetermined connection region; controlling an orientation of each bond pad at the peripheral region of the semiconductor die, thereby selectively configuring the predetermined connection region thereof to be electrically connected to one of a plurality of conductive structures included in at least one metal interconnect layer of the semiconductor die; and storing a bond pad design of the bond pads at the peripheral region of the semiconductor die.

Abstract: The present invention provides a semiconductor device capable of eliminating voltage (IR) drop of a semiconductor die inside the semiconductor device and a fabricating method of the semiconductor device. The semiconductor device comprises the semiconductor die, and the semiconductor die comprises a first surface area, a plurality of first pads potentially equivalent to each other, a passivation layer, a plurality of first openings, and a first conducting medium layer. The passivation layer is disposed on the plurality of first pads. The plurality of first openings is formed on the passivation layer, and utilized for exposing the plurality of first pads. The first conducting medium layer is formed on the first surface area, and utilized for fulfilling the plurality of first openings to connect the plurality of first pads.

Abstract: A circuit and a circuit design method are provided. The circuit operates between a first power source voltage and a ground voltage. The circuit comprises at least one low speed circuit path and at least one high speed circuit path. The low speed circuit path adjusts voltage level at the first power source voltage or the ground voltage. The low speed circuit path provides a first return path and isolates unwanted noise signals for a signal on the high speed circuit path.

Abstract: An I/O buffer including an I/O circuit, a pad and a pulling resistant device. The I/O circuit is for inputting or outputting a signal. The pulling resistant device has a plurality of resistant elements electrically connected between the I/O circuit and the pad, for forming a resistance value.

Abstract: A semiconductor chip includes a die mounted on a packaging substrate. The die includes a semiconductor substrate; inter-metal dielectric layers on the semiconductor substrate; levels of metal interconnection, wherein at least two potential equivalent metal traces are formed in a level of the metal interconnection; a passivation layer disposed over the two metal traces, wherein two openings are formed in the passivation layer to expose portions of the two metal traces; a conductive member externally mounted on the passivation layer between the two openings; and a redistribution layer formed over the conductive member.

Abstract: Level shifters capable of setting logic level of the output signals thereof to a pre-defined known state during power-up are provided, in which a first logic unit is powered by a first power voltage, receives input signals with a core power voltage and comprises first and second output terminals. First and second drivers are coupled between the first output terminal and the first power voltage and between the second output terminal and the second power voltage respectively. When one of the first and second power voltages is not ready during power-up, the first driver matches a voltage level on the first output terminal with the first power voltage by AC coupling and the second driver pulls low or maintains a voltage level on the second output terminal.

Abstract: A calibration circuit including a plurality of first resistance components, a plurality of second resistance components, and a first feedback system is provided. The first feedback system selects M1 first resistance components and N1 second resistance components so that a first combination of the M1 first resistance components and the N1 second resistance components substantially matches the impedance of a first resistor. The first feedback system selects M2 first resistance components and N2 second resistance components so that a second combination of the M2 first resistance components and the N2 second resistance components substantially matches the impedance of the first resistor. Based on the values of M1, N1, M2, N2, and a target impedance, the first feedback system generates a first set of calibration signals for a plurality of third resistance components and generates a second set of calibration signals for a plurality of fourth resistance components.

Abstract: A slew rate controlled output buffer. The slew rate controlled output buffer comprises a pre-driver circuit having a data input node and a data output node and a driver circuit coupled to the output node of the pre-driver circuit. The pre-driver circuit comprises a plurality of inverters connected in parallel, each having an input terminal coupled to the input node and an output terminal coupled to the output node, wherein at least one of the inverters is selectively disabled by a slew rate control signal via a slew rate controller. The driver circuit is driven by an output signal of the pre-driver circuit.

Abstract: Memory circuits capable of preventing false programming caused by power-up sequence are provided, in which a programmable unit comprises a plurality of programmable elements, a source bus coupled between an external programming voltage and the programmable elements, a switching unit connected between the external programming voltage and the source bus, comprising a control terminal, and a level shifter, shifting a voltage level of an enabling signal to a first power voltage from a second power voltage lower than the external programming voltage. When the second power voltage is not ready during power up, the level shifter sets the control terminal of the switching unit to a predetermined logic level such that the switching unit is turned off and the source bus is disconnected from the external programming voltage thereby preventing false programming.