Abstract: A method for forming a dynamic random access memory device includes the step of forming a memory cell access transistor on a semiconductor substrate wherein the memory cell access transistor includes a source/drain region at a surface of the semiconductor substrate. An insulating layer is formed on the semiconductor substrate and on the memory cell access transistor wherein the insulating layer has a contact hole therein exposing a portion of the source/drain region of the substrate. A first conductive layer is chemical vapor deposited on the exposed portion of the source/drain region of the substrate, and a second conductive layer is physical vapor deposited on the first conductive layer opposite the substrate. A dielectric layer is formed on the second conductive layer opposite the substrate, and a third conductive layer is formed on the dielectric layer opposite the substrate.