Patents by Inventor Chee Chong Lim

Chee Chong Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8643461
    Abstract: A device having a substrate and a dielectric layer disposed over the substrate is disclosed. The device includes a transformer layout disposed in the dielectric layer. The transformer layout includes an integrated transformer having primary and secondary coil elements. The first and second coil elements are configured to result in noise-self cancellation effect.
    Type: Grant
    Filed: April 28, 2011
    Date of Patent: February 4, 2014
    Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
    Inventors: Chee Chong Lim, Johnny Kok Wai Chew, Suh Fei Lim, Wei Gao
  • Publication number: 20120274434
    Abstract: A device having a substrate and a dielectric layer disposed over the substrate is disclosed. The device includes a transformer layout disposed in the dielectric layer. The transformer layout includes an integrated transformer having primary and secondary coil elements. The first and second coil elements are configured to result in noise-self cancellation effect.
    Type: Application
    Filed: April 28, 2011
    Publication date: November 1, 2012
    Applicant: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Chee Chong LIM, Johnny Kok Wai CHEW, Suh Fei LIM, Wei GAO
  • Patent number: 8268733
    Abstract: A method of forming a device is presented. The method includes providing a wafer having an active surface and dividing the wafer into a plurality of portions. The wafer is selectively processed by localized heating of a first of the plurality of portions. The wafer is then repeatedly selectively processed by localized heating of a next of the plurality of portions until all plurality of portions have been selectively processed.
    Type: Grant
    Filed: August 7, 2009
    Date of Patent: September 18, 2012
    Assignees: Nanyang Technological University, National University of Singapore, Globalfoundries Singapore Pte. Ltd.
    Inventors: Dexter Tan, Chee Chong Lim, Sai Hooi Yeong, Chee Mang Ng
  • Patent number: 8242872
    Abstract: Embodiments of the invention provide a transformer comprising: a first coil element having a transverse axis along a transverse direction, the first coil element having p turns where p is greater than or equal to 1; and a second coil element having a transverse axis generally parallel to the transverse axis of the first coil element, the second coil element having n turns, where n is greater than or equal to 5p; wherein the first and second coil elements are arranged to provide electromagnetic coupling between the coil elements along a portion of a length of the second coil element in both a transverse direction parallel to the transverse axes and a lateral direction, wherein the lateral direction is a direction normal to the transverse axes.
    Type: Grant
    Filed: July 19, 2007
    Date of Patent: August 14, 2012
    Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
    Inventors: Chee Chong Lim, Kok Wai Chew, Kiat Seng Yeo, Suh Fei Lim, Manh Anh Do, Lap Chan
  • Publication number: 20110034040
    Abstract: A method of forming a device is presented. The method includes providing a wafer having an active surface and dividing the wafer into a plurality of portions. The wafer is selectively processed by localized heating of a first of the plurality of portions. The wafer is then repeatedly selectively processed by localized heating of a next of the plurality of portions until all plurality of portions have been selectively processed.
    Type: Application
    Filed: August 7, 2009
    Publication date: February 10, 2011
    Applicants: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD., NANYANG TECHNOLOGICAL UNIVERSITY
    Inventors: Dexter TAN, Chee Chong LIM, Sai Hooi YEONG, Chee Mang NG
  • Patent number: 7570144
    Abstract: An integrated transformer structure includes a first coil element associated with a transverse axis, the first coil element having at least one turn. The first coil element includes a first portion provided on a first lateral level, and a second portion provided on a second lateral level. The first and second lateral levels being mutually spaced apart along said transverse axis. The first and second portions being displaced laterally from said axis by different respective distances. At least one crossover portion of the first coil element, in which the first coil element being configured to provide a conducting path through at least a portion of the first portion of the first coil element to the crossover portion, through the crossover portion and subsequently through at least a portion of the second portion of the first coil element, in which any change of flow direction along said path is less than 90° in a lateral direction.
    Type: Grant
    Filed: May 18, 2007
    Date of Patent: August 4, 2009
    Assignees: Chartered Semiconductor Manufacturing, Ltd., Nanyang Technological University
    Inventors: Chee Chong Lim, Kok Wai Chew, Kiat Seng Yeo, Suh Fei Lim, Manh Anh Do, Lap Chan
  • Publication number: 20080284552
    Abstract: An integrated transformer structure includes a first coil element associated with a transverse axis, the first coil element having at least one turn. The first coil element includes a first portion provided on a first lateral level, and a second portion provided on a second lateral level. The first and second lateral levels being mutually spaced apart along said transverse axis. The first and second portions being displaced laterally from said axis by different respective distances. At least one crossover portion of the first coil element, in which the first coil element being configured to provide a conducting path through at least a portion of the first portion of the first coil element to the crossover portion, through the crossover portion and subsequently through at least a portion of the second portion of the first coil element, in which any change of flow direction along said path is less than 90° in a lateral direction.
    Type: Application
    Filed: May 18, 2007
    Publication date: November 20, 2008
    Applicants: Chartered Semiconductor Manufacturing, Ltd., Nanyang Technological University
    Inventors: Chee Chong Lim, Kok Wai Chew, Kiat Seng Yeo, Suh Fei Lim, Manh Anh Do, Lap Chan
  • Publication number: 20080284553
    Abstract: Embodiments of the invention provide a transformer comprising: a first coil element having a transverse axis along a transverse direction, the first coil element having p turns where p is greater than or equal to 1; and a second coil element having a transverse axis generally parallel to the transverse axis of the first coil element, the second coil element having n turns, where n is greater than or equal to 5 p; wherein the first and second coil elements are arranged to provide electromagnetic coupling between the coil elements along a portion of a length of the second coil element in both a transverse direction parallel to the transverse axes and a lateral direction, wherein the lateral direction is a direction normal to the transverse axes.
    Type: Application
    Filed: July 19, 2007
    Publication date: November 20, 2008
    Applicants: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD., NANYANG TECHNOLOGICAL UNIVERSITY
    Inventors: Chee Chong LIM, Kok Wai CHEW, Kiat Seng YEO, Suh Fei LIM, Manh Anh DO, Lap CHAN