Abstract: A method of attaching a capacitor (112) to a substrate (100) includes applying a flux (108) to respective capacitor pads (104, 106) on the substrate (100). The capacitor (112) is placed on the fluxed capacitor pads (104, 106) and a reflow operation is performed on the capacitor (112) and the substrate (100) such that intermetallic interconnects (128) are formed between the capacitor (112) and the substrate (100).

Abstract: A method of packaging a semiconductor die (10) includes providing a flip-chip die (10) with bump connections (12) on its bottom surface (14). An adhesive tape (18) is attached to a plate surface (16) and lead fingers (20) are formed on the tape (18). The die (10) is placed on the tape (18) such that the bumps (12) on the die (10) contact respective ones of the lead fingers (20) on the tape (18). A reflow process is performed on the die (10), the tape (18) and the plate (16), which forms C5 type interconnects. A mold compound (24) is formed over the die (10) and the tape (18), and then the tape (18) and the plate (16) are removed.

Abstract: A method of making a semiconductor package (50) includes attaching a bottom surface (54) of an integrated circuit (IC) die (52) to a base carrier (56) and electrically connecting the die (52) to the base carrier (56). A first surface (66) of a heat spreader (60) is attached to a top surface (58) of the die (52). The heat spreader includes a laminate (68) attached to a second surface (70) opposite the first surface (66). The die (52), the heat spreader (60), the laminate (68) and at least a portion of the base carrier (56) are encapsulated. The laminate (68) is detached from the heat spreader (60), which exposes the second surface (70) of the heat spreader (60).

Abstract: A method of packaging an integrated circuit die (12) includes the steps of loading an array of soft conductive balls into recesses formed in a platen and locating the platen in a first part of a mold cavity. A second part of the mold is pressed against the balls to flatten a surface of the balls. A first mold compound then is injected into the mold cavity such that the mold compound surrounds exposed portions of the balls. The balls are removed from the platen and a first side of an integrated circuit die is attached to the balls such that the die is surrounded by the balls. Die bonding pads on a second side of the die are electrically connected to respective ones of the balls surrounding the die, and then the die, the electrical connections, and a top portion of the conductive balls is encapsulated with a second mold compound. The result is an encapsulated IC having a bottom side with exposed balls.

Abstract: A method of packaging an integrated circuit die (12) includes the steps of loading an array of soft conductive balls into recesses formed in a platen and locating the platen in a first part of a mold cavity. A second part of the mold is pressed against the balls to flatten a surface of the balls. A first mold compound then is injected into the mold cavity such that the mold compound surrounds exposed portions of the balls. The balls are removed from the platen and a first side of an integrated circuit die is attached to the balls such that the die is surrounded by the balls. Die bonding pads on a second side of the die are electrically connected to respective ones of the balls surrounding the die, and then the die, the electrical connections, and a top portion of the conductive balls is encapsulated with a second mold compound. The result is an encapsulated IC having a bottom side with exposed balls.

Abstract: A semiconductor device (30,30?) includes a semiconductor die (32, 32?) having bonding pads (34, 34?) and ball bumps (38, 38?). Each of the ball bumps (38, 38?) has a base portion (40, 40?) and a protruding portion (42, 42?). The semiconductor die (32, 32?) is mounted on a lead frame having lead posts (44, 44?) such that each of the lead posts (44, 44?) is aligned to a respective one of the ball bumps (38, 38?). Each of the lead posts (44, 44?) has an opening (46, 46?) that extends from a first surface of the lead post (44, 44?) through to a second surface of the lead post (44, 44?). The opening (46, 46?) contains the protruding portion (42, 42?) of the respective one of the bumps (38, 38?) to facilitate alignment and bonding. A rivet (50, 50?) is formed from the protruding portion (42, 42?) of the respective one of the plurality of bumps (38, 38?) on the surface of the lead posts (44, 44?), which provides for bonding and securing of the lead posts (44, 44?) to the semiconductor die (32, 32?).