Abstract: A package includes: a vertically extending first electronic component with at least one exposed electrically conductive first terminal; a vertically extending second electronic component with at least one exposed electrically conductive second terminal; and a clip with an accommodation volume in which the first electronic component and the second electronic component are accommodated and are held together. The at least one first terminal and the at least one second terminal are electrically accessible at a bottom of the clip.

Abstract: A method for fabricating blanks for light-guide optical elements from a compound glass stack is disclosed. The compound glass stack is aligned to the cutting planes so that light reflecting layers arranged between the glass plates bonded together making up the compound glass stack have a defined orientation with respect to the side faces of the slices after cutting. The compound glass stack has a plane with a defined orientation, so that the light reflecting layers within the slices are correctly oriented when the cutting planes run parallel to the plane of the compound glass stack. The alignment of the compound glass stack to the cutting planes includes adjusting the tilt angles of the plane of the compound glass stack with respect to the cutting planes using an autocollimator, and adjusting the position of the compound glass stack in a direction obliquely to the cutting planes.

Abstract: A method of forming a semiconductor package includes providing a metal baseplate having a base section and a plurality of metal posts, the base section being a planar pad of substantially uniform thickness, the plurality of metal posts each extending up from a planar upper surface of the base section, mounting a semiconductor die on the upper surface of the metal baseplate, forming an encapsulant body of electrically insulating mold compound on the upper surface of the base section, electrically connecting terminals of the semiconductor die to the metal posts, and removing the base section so as to form package contacts from the metal posts at a first surface of the encapsulant body.

Abstract: The invention, in part, encompasses methods to assess viral infections in cells and subjects. The invention includes methods that can be used to determine the presence or absence of a viral infection in a cell or subject; severity of a viral infection in a cell or subject, and/or risk of a severe viral infection in a cell or subject. Certain methods of the invention also include selecting and/or administration a therapeutic regimen for a subject with a viral infection, based in part on the determination of the presence and/or severity of the viral infection in the subject.

Abstract: Examples disclose a semiconductor package including a semiconductor chip, an encapsulation, and a metal structure. The semiconductor chip is at least partially embedded in the encapsulation. The metal structure is formed on an outer surface of the encapsulation and includes a floating portion. The floating portion is floating on the encapsulation and the metal structure is electrically coupled with the semiconductor chip. Further examples disclose a method for manufacturing a semiconductor package, the method including providing a semiconductor chip at least partially embedded in an encapsulation; providing a metal structure on the encapsulation; forming a floating portion of the metal structure by forming a recess in the encapsulation.

Abstract: A power semiconductor package includes: a first power semiconductor die arranged on and electrically coupled to a first side of a first die pad; a first passive electronic component having a first end and an opposite second end, the first end being arranged on and coupled to the first side of the first die pad and the second end being coupled to an internal ledge of a first external contact; a second passive electronic component connected in series with the first passive electronic component; and an encapsulation encapsulating the first power semiconductor die and the first and second passive electronic components. The first external contact is exposed from a first lateral side of the encapsulation.

Abstract: A method of forming a semiconductor package includes providing a baseplate, mounting a semiconductor die on the baseplate with a main surface of the semiconductor die facing away from the baseplate, forming vertical interconnect elements on the main surface of the semiconductor die, forming an encapsulant on the baseplate that encapsulates the semiconductor die, exposing the vertical interconnect elements at an upper surface of the encapsulant, forming a first level metal pad on the upper surface of the encapsulant that contacts the exposed vertical interconnect elements, and forming structured metal regions on the upper surface of the encapsulant, wherein forming the structured metal regions includes structuring the first level metal pad.

Abstract: Integrated circuit devices, methods, and circuitry for selectively blocking a voltage signal on receiver circuitry to reduce or eliminate unequal aging on the receiver circuitry. A device may include a first input/output (IO) pin to receive a first voltage and a second IO pin to receive a second voltage. The device may include a differential signal receiver that includes a first terminal coupled to the first IO pin and a second terminal coupled to the second IO pin. Transmission gate circuitry may selectively block the first voltage or the second voltage from being applied to the differential signal receiver. The transmission gate circuitry may include transistors having a lower junction voltage limit than the first voltage or the second voltage, or both.

Abstract: A receiver circuit includes a first sense amplifier circuit that generates a first data signal based on a second data signal that has a first common-mode voltage during a first mode of operation. The receiver circuit includes a second sense amplifier circuit that generates a third data signal based on a fourth data signal that has a second common-mode voltage less than the first common-mode voltage during a second mode of operation. The receiver circuit includes a switch circuit that provides first data bits indicated by the first data signal to an output during the first mode of operation. The switch circuit provides second data bits indicated by the third data signal to the output during the second mode of operation.

Abstract: A semiconductor package includes: a carrier having an electrically insulative body and a first contact structure at a first side of the electrically insulative body; and a semiconductor die having a first pad attached to the first contact structure of the carrier, the first pad being at source or emitter potential. The first pad is spaced inward from an edge of the semiconductor die by a first distance. The semiconductor die has an edge termination region between the edge and the first pad. The first contact structure of the carrier is spaced inward from the edge of the semiconductor die by a second distance greater than the first distance such that an electric field that emanates from the edge termination region in a direction of the carrier during normal operation of the semiconductor die does not reach the first contact structure of the carrier. Methods of production are also provided.

Abstract: Disclosed is a capacitor having a high dielectric constant and low leakage current and a method for fabricating the same, wherein the capacitor may include a first conductive layer, a second conductive layer, a dielectric layer stack between the first conductive layer and the second conductive layer, a dielectric interface layer between the dielectric layer stack and the second conductive layer, and a high work function interface layer between the dielectric interface layer and the second conductive layer.

Abstract: A package is disclosed. In one example, the package includes an electronic component and an encapsulant encapsulating at least part of the electronic component. A first electrically conductive structure is arranged on one side of the electronic component, a second electrically conductive structure arranged on an opposing other side of the electronic component and being electrically coupled with the electronic component, and at least one sidewall recess at the encapsulant. The first electrically conductive structure and the second electrically conductive structure are configured to be at different electric potentials during operation of the package. The first electrically conductive structure and the second electrically conductive structure are exposed at opposing main surfaces of the encapsulant.

Abstract: Disclosed is a capacitor having a high dielectric constant and low leakage current and a method for fabricating the same, wherein the capacitor may include a first conductive layer, a second conductive layer, a dielectric layer stack between the first conductive layer and the second conductive layer, a dielectric interface layer between the dielectric layer stack and the second conductive layer, and a high work function interface layer between the dielectric interface layer and the second conductive layer.

Abstract: A method for fabricating an electronic device includes providing an encapsulant having an encapsulation material, providing a first laser beam and forming a trench into a main surface of the encapsulant by removing the encapsulation material by means of the first laser beam, forming a mask along a portion above the edge of the trench, and providing a second laser beam and sweeping the second laser beam over a surface area of the main surface of the encapsulant, wherein the surface area covers at least an area spatially confined by the trench.

Abstract: A method of forming a semiconductor package includes providing a metal baseplate having a base section and a plurality of metal posts, the base section being a planar pad of substantially uniform thickness, the plurality of metal posts each extending up from a planar upper surface of the base section, mounting a semiconductor die on the upper surface of the metal baseplate, forming an encapsulant body of electrically insulating mold compound on the upper surface of the base section, electrically connecting terminals of the semiconductor die to the metal posts, and removing the base section so as to form package contacts from the metal posts at a first surface of the encapsulant body.

Abstract: A method for fabricating an electrical or electronic device package includes providing a first plateable encapsulation layer; activating first selective areas on a main surface of the first plateable encapsulation layer; forming a first metallization layer by electrolytic or electroless plating on the first activated areas; and fabricating a passive electrical component on the basis of the first metallization layer.

Abstract: The method for fabricating an electrical module is disclosed. In one example, the method includes providing a bottom unit comprising a plateable encapsulant. Selective areas of the bottom unit are activated thereby turning them into electrically conductive regions. At least one electrical device comprising external contact elements is provided. The method includes placing the electrical device on the bottom unit so that the external contact elements are positioned above at least a first subset of the electrically conductive regions, and performing a plating process on the electrically conductive regions for generating plated regions and for electrically connecting the external contact elements with at least a first subset of the plated regions.

Abstract: The invention, in part, encompasses methods to identify extrachromosomal circular DNA (ecDNA) and methods to identify and assess interactions between ecDNA and oncogene transcription.

Abstract: Disclosed is a capacitor having a high dielectric constant and low leakage current and a method for fabricating the same, wherein the capacitor may include a first conductive layer, a second conductive layer, a dielectric layer stack between the first conductive layer and the second conductive layer, a dielectric interface layer between the dielectric layer stack and the second conductive layer, and a high work function interface layer between the dielectric interface layer and the second conductive layer.