Patents by Inventor Chee Keong Loh

Chee Keong Loh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor wafer thinned by stealth lasing
    Patent number: 11862583
    Abstract: A semiconductor wafer thinned by a stealth lasing process, and semiconductor dies formed therefrom. After formation of an integrated circuit layer on a semiconductor wafer, the wafer may be thinned by focusing a laser at discrete points in the wafer substrate beneath the surface of the wafer. Upon completion of stealth lasing in one or more planar layers in the substrate, a portion of the substrate may be removed, leaving the wafer thinned to a desired final thickness.
    Type: Grant
    Filed: March 30, 2023
    Date of Patent: January 2, 2024
    Assignee: Western Digital Technologies, Inc.
    Inventors: Chee Keong Loh, Foo You Chow, Ridzuan Hanapi, Boon Soo Lim
  • SEMICONDUCTOR WAFER THINNED BY STEALTH LASING
    Publication number: 20230238338
    Abstract: A semiconductor wafer thinned by a stealth lasing process, and semiconductor dies formed therefrom. After formation of an integrated circuit layer on a semiconductor wafer, the wafer may be thinned by focusing a laser at discrete points in the wafer substrate beneath the surface of the wafer. Upon completion of stealth lasing in one or more planar layers in the substrate, a portion of the substrate may be removed, leaving the wafer thinned to a desired final thickness.
    Type: Application
    Filed: March 30, 2023
    Publication date: July 27, 2023
    Applicant: Western Digital Technologies, Inc.
    Inventors: Chee Keong Loh, Foo You Chow, Ridzuan Hanapi, Boon Soo Lim
  • SEMICONDUCTOR WAFER THINNED BY STEALTH LASING
    Publication number: 20220020705
    Abstract: A semiconductor wafer thinned by a stealth lasing process, and semiconductor dies formed therefrom. After formation of an integrated circuit layer on a semiconductor wafer, the wafer may be thinned by focusing a laser at discrete points in the wafer substrate beneath the surface of the wafer. Upon completion of stealth lasing in one or more planar layers in the substrate, a portion of the substrate may be removed, leaving the wafer thinned to a desired final thickness.
    Type: Application
    Filed: July 20, 2020
    Publication date: January 20, 2022
    Applicant: Western Digital Technologies, Inc.
    Inventors: Chee Keong Loh, Foo You Chow, Ridzuan Hanapi, Boon Soo Lim