Abstract: A light emitting device includes an LED having a light emitting top surface and sidewalls. A phosphor structure is attached to the light emitting surface of the LED. The phosphor structure has a light emitting top surface facing away from the LED light emitting surface, and sidewalls. A light reflective material is arranged to cover the sidewalls of the LED and the phosphor structure. A light absorptive region is defined in the light reflective material around a perimeter of the light emitting surface of the phosphor structure. The light absorptive region may be spaced apart from the perimeter of the phosphor structure by a gap. The light absorptive region may be formed by ultraviolet laser illumination of the light reflecting material.

Abstract: A method for enabling self-aligning light-emitting diodes is provided. The method includes printing a die architecture including solders having a bond line thickness according to a printed circuit board design and placing light-emitting diodes in corresponding placement positions onto the solders. The method includes implementing a reflow process that includes a self-alignment effect for the light-emitting diodes. The self-alignment effect comprises creating surface tension forces while the solders are molten that pull or hold the light-emitting diodes to or at final positions.

Abstract: A semiconductor device is electrically connected to a power source through an electrical contact and at least one bump disposed on the electrical contact. The semiconductor device may be an LED on a CMOS wafer with the electrical contact spaced apart from it and disposed on the wafer. The semiconductor device and the electrical contact have side coating material disposed to surround them, and the at least one bump may be stacked to reach or nearly reach the top surface of the side coating material. This allows wire bonding of the semiconductor device to an external power source through the easily accessible bump(s), whose top surface is exposed by the side coating material.

Abstract: A light emitting device includes an LED having a light emitting top surface and sidewalls. A phosphor structure is attached to the light emitting surface of the LED. The phosphor structure has a light emitting top surface facing away from the LED light emitting surface, and sidewalls. A light reflective material is arranged to cover the sidewalls of the LED and the phosphor structure. A light absorptive region is defined in the light reflective material around a perimeter of the light emitting surface of the phosphor structure. The light absorptive region may be spaced apart from the perimeter of the phosphor structure by a gap. The light absorptive region may be formed by ultraviolet laser illumination of the light reflecting material.

Abstract: A light emitting device includes an LED having a light emitting top surface and sidewalls. A phosphor structure is attached to the light emitting surface of the LED. The phosphor structure has a light emitting top surface facing away from the LED light emitting surface, and sidewalls. A light reflective material is arranged to cover the sidewalls of the LED and the phosphor structure. A light absorptive region is defined in the light reflective material around a perimeter of the light emitting surface of the phosphor structure. The light absorptive region may be spaced apart from the perimeter of the phosphor structure by a gap. The light absorptive region may be formed by ultraviolet laser illumination of the light reflecting material.

Abstract: A light emitting device includes an LED having a light emitting top surface and sidewalls. A phosphor structure is attached to the light emitting surface of the LED. The phosphor structure has a light emitting top surface facing away from the LED light emitting surface, and sidewalls. A light reflective material is arranged to cover the sidewalls of the LED and the phosphor structure. A light absorptive region is defined in the light reflective material around a perimeter of the light emitting surface of the phosphor structure. The light absorptive region may be spaced apart from the perimeter of the phosphor structure by a gap. The light absorptive region may be formed by ultraviolet laser illumination of the light reflecting material.