Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: An apparatus and method for detecting characteristics of a microelectronic substrate. The microelectronic substrate can have a first surface with first topographical features, such as roughness elements, and a second surface facing opposite from the first surface and having second topographical features, such as protruding conductive structures. In one embodiment, the apparatus can include a support member configured to carry the microelectronic substrate with a first portion of the first surface exposed and a second portion of the second surface exposed. The apparatus can further include a topographical feature detector positioned proximate to support member and aligned with the first portion of the first surface of the microelectronic substrate to detect characteristics, such as a roughness, of the first surface while the microelectronic substrate is carried by the support member.