Abstract: A floorplan for a Structured ASIC chip is shown having a core region containing memory and VCLB logic cells surrounded by a plurality of IO connection fabrics that include a first IO connection fabric comprising IO sub-banks connecting the core of the chip to pins for external signals to the core, a first high-speed routing fabric disposed along the east-west vertical top of the core and connects the core to high-speed IO such as SerDes; a network-aware connection fabric connects the core to a microcontroller primarily for testing and repair of the memory in the core; and a second-high speed routing fabric is disposed on the north-south vertical sides of the core and communicates with the IO sub-banks. The VCLB Structured ASIC chip is manufactured on a 28 nm CMOS process lithographic node or smaller, having several metal layers and preferably is programmed on a single via layer.

Abstract: A via-configurable logic block architecture for a Structured ASIC has a plurality of MOSFET transistor chains connected to one another through vias. In one embodiment there are three chains and the first transistor chain is a NFET transistor chain, the second transistor chain is a PFET transistor chain, and the third transistor chain is a NFET transistor chain. The first, second and third transistor chains are formed into devices made of transistors that are selected from a voltage threshold group consisting of LVT, SVT and HVT devices, where the first and third transistor chains are formed into devices from a voltage threshold group that is different from one another. In another embodiment transistor drive strength may be varied in the transistor chains of the logic block. In yet another embodiment both voltage threshold and drive strength may be varied together in a symmetrical manner.