Patents by Inventor Chee Won

Chee Won has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060147112
    Abstract: A method for generating a block-based image histogram from data compressed by JPEG, MPEG-1, and MPEG-2, or uncompressed image data employing block-based linear quantization to generate histograms that include color, brightness, and edge components. The edge histogram, in particular, includes the global edge features, semi-global edge features, and local edge features. The global edge histogram is based on image blocks of the entire image space. The local edge histogram is based on a group of edge blocks. The semi-global edge histogram is based on the horizontally and the vertically grouped image blocks. A method for generating block-based image histogram with color information and brightness information of image data in accordance with an embodiment of the present invention extracts feature information of an image in terms of the block and updates global histogram bins on the basis of the feature information.
    Type: Application
    Filed: February 8, 2006
    Publication date: July 6, 2006
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Soo Park, Chee Won, Dong Park, Dong Choi, Seong Yoo, Hyun Kim
  • Publication number: 20060013481
    Abstract: A method for constructing a database having digital video data information representing a plurality of video sequence is disclosed. The method includes the steps of: a) partitioning each image frame of each video sequence into L number of sub images; b) generating L number of edge histograms for each image frame; c) normalizing the edge histogram bins to thereby generate M number of normalized edge histogram bins; d) calculating M representative edge histogram bins in order to generate L number of representative edge histograms based on the normalized edge histogram bins; and e) non-linearly quantizing the representative edge histogram bins to generate M number of quantization index values for the each representative edge histogram, to be stored in the database.
    Type: Application
    Filed: January 16, 2003
    Publication date: January 19, 2006
    Inventors: Sung-Hee Park, Soo-Jun Park, Myung-Gil Jang, Sang-Kyu Park, Chee Won
  • Publication number: 20020008079
    Abstract: A dry etching method for an iridium electrode, wherein the dry etching method includes depositing an iridium metal film on a substrate, forming a photoresist mask on the metal film in a predetermined pattern, etching the metal film which is not covered with the photoresist mask in the predetermined pattern by generating plasma using an etch gas containing an inert gas and fluorine-based gas, and removing the photoresist mask. Accordingly, no etch residues remain even if a photoresist is used as an etch mask, and it is not necessary to heat a substrate to a high temperature. In addition, since the selectivity of an iridium electrode with respect to a photoresist mask can be increased, an iridium electrode having a satisfactory etch profile can be formed.
    Type: Application
    Filed: March 9, 2001
    Publication date: January 24, 2002
    Inventor: Chee-won Chung
  • Patent number: 5976394
    Abstract: A method for dry etching a metallic thin film (i.e., platinum thin film) is disclosed whereby a clean metallic thin film can be formed by restraining redeposition of the metal. The etching gas includes a mixed gas including Cl.sub.2 and SiCl.sub.4 whereby a plasma of the mixed gas generates reactive species to react with the metallic thin film and form volatile residua that can be desorbed from the etched surface.
    Type: Grant
    Filed: April 17, 1997
    Date of Patent: November 2, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Chee-won Chung
  • Patent number: 5658820
    Abstract: A method for manufacturing ferroelectric thin-film which is used as a memory cell for an FRAM includes the steps of: (a) forming a lower electrode, a ferroelectric thin-film and an upper Pt electrode on a substrate in sequence; (b) forming a photoresist on the upper Pt electrode; (c) patterning the photoresist in a predetermined pattern; and (d) etching the substrate, the step (d) including the steps of installing a holder to which a predetermined DC self bias voltage is generated in a chamber of a plasma etching apparatus around which an RF coil is wound, of injecting Ar, chloric and fluoric gases of a predetermined composition ratio into the chamber, of applying a RF power of a predetermined frequency and power to the RF coil to generate an inductively coupled plasma in the chamber, and of etching down the substrate from the upper Pt electrode to the ferroelectric thin-film to a predetermined depth by the plasma of the Ar, chloric and fluoric gases using the photoresist as a mask.
    Type: Grant
    Filed: March 19, 1996
    Date of Patent: August 19, 1997
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Chee-won Chung