Abstract: A semiconductor die is separated from a semiconductor wafer using a method that involves performing a partial cut on the semiconductor wafer, applying tape lamination to a front side of the semiconductor wafer, grinding a back side of the semiconductor wafer, mounting the semiconductor wafer to a die attach film (DAF) layer, removing the tape lamination from the front side of the semiconductor wafer, and performing a DAF-die separation operation to separate the semiconductor die from the adjacent semiconductor die. A DAF laser is not used during the method of separating a semiconductor die from a semiconductor wafer. The front side is the side of the semiconductor wafer where integrated circuits are exposed. The partial cut is between the semiconductor die and an adjacent semiconductor die. The back side is opposite of the front side and the back side is a silicon layer of the semiconductor die.

Abstract: Semiconductor dies formed on a wafer may be picked from the wafer with little or no stress, thus preventing cracking and damage to the semiconductor dies. A die attach film (DAF) layer is laminated onto an inactive surface of the wafer and the DAF layer is cut in the outline of the dies. The inactive surface of the wafer may then be supported on a vacuum chuck without using a dicing tape, and dies transferred from the wafer using a pick and place robot.

Abstract: A process includes forming one or more apertures on a component backside, creating a vacuum in a mold chase, and engaging the component backside with a mold compound in the mold chase. The one or more apertures form an aperture structure. The aperture structure may include multiple apertures parallel or orthogonal to each other. The apertures have an aperture width, aperture depth, and aperture pitch. These characteristics may be altered to minimize the likelihood of trapped air remaining after creating the vacuum in the mold chase.

Abstract: A semiconductor device is disclosed including a die stack including a number of dies aligned with each other with respect to an axis, and a top die that is offset along the axis the to prevent die cracking.

Abstract: A semiconductor device is disclosed including a die stack including a number of dies aligned with each other with respect to an axis, and a top die that is offset along the axis the to prevent die cracking.

Abstract: A process includes forming one or more apertures on a component backside, creating a vacuum in a mold chase, and engaging the component backside with a mold compound in the mold chase. The one or more apertures form an aperture structure. The aperture structure may include multiple apertures parallel or orthogonal to each other. The apertures have an aperture width, aperture depth, and aperture pitch. These characteristics may be altered to minimize the likelihood of trapped air remaining after creating the vacuum in the mold chase.

Abstract: A semiconductor device is disclosed including semiconductor die formed with a row of functional die bond pads and an adjacent row of dummy die bond pads. The functional die bond pads may be electrically connected to the integrated circuits formed within the semiconductor die. The dummy die bond pads may be formed in the scribe area of a semiconductor wafer from which the semiconductor die are formed, and are provided for wire bonding the semiconductor die within the semiconductor device.

Abstract: A semiconductor die is disclosed including corner recesses to prevent cracking of the semiconductor die during fabrication. Prior to dicing the semiconductor die from the wafer, recesses may be formed in the wafer at corners between any pair of semiconductor die. The recesses may be formed by a laser or photolithographic processes in the kerf area between semiconductor die. Once formed, the corner recesses prevent cracking and damage to semiconductor die which could otherwise occur at the corners of adjacent semiconductor die as the adjacent semiconductor die move relative to each other during the backgrind process.

Abstract: A semiconductor device is disclosed including semiconductor die stacked in a stepped, offset configuration, where die bond pads of semiconductor die on different levels are interconnected using one or more conductive bumps.

Abstract: A semiconductor device is disclosed including semiconductor die stacked in a stepped, offset configuration, where die bond pads of semiconductor die on different levels are interconnected using one or more conductive bumps.

Abstract: A semiconductor device is disclosed that is formed with die bond pads at an edge of the semiconductor die. The die bond pads may be formed partially in a kerf area between semiconductor die on a wafer. When the wafer is diced, the die bond pads are severed along their length, leaving a portion of the die bond pads exposed at an edge of the diced semiconductor die. Having die bond pads at the edge of the die minimizes the offset between die when stacked into a package.

Abstract: A semiconductor device is disclosed including semiconductor die formed with a row of functional die bond pads and an adjacent row of dummy die bond pads. The functional die bond pads may be electrically connected to the integrated circuits formed within the semiconductor die. The dummy die bond pads may be formed in the scribe area of a semiconductor wafer from which the semiconductor die are formed, and are provided for wire bonding the semiconductor die within the semiconductor device.

Abstract: A semiconductor die is disclosed including corner recesses to prevent cracking of the semiconductor die during fabrication. Prior to dicing the semiconductor die from the wafer, recesses may be formed in the wafer at corners between any pair of semiconductor die. The recesses may be formed by a laser or photolithographic processes in the kerf area between semiconductor die. Once formed, the corner recesses prevent cracking and damage to semiconductor die which could otherwise occur at the corners of adjacent semiconductor die as the adjacent semiconductor die move relative to each other during the backgrind process.

Abstract: A semiconductor device is disclosed that is formed with die bond pads at an edge of the semiconductor die. The die bond pads may be formed partially in a kerf area between semiconductor die on a wafer. When the wafer is diced, the die bond pads are severed along their length, leaving a portion of the die bond pads exposed at an edge of the diced semiconductor die. Having die bond pads at the edge of the die minimizes the offset between die when stacked into a package.

Abstract: An integrated circuit package-in-package system is provided including mounting first integrated circuits stacked in a first offset configuration over a die-attach paddle having a first edge and a second edge, opposing the first edge; connecting the first integrated circuits and a second edge lead adjacent the second edge; mounting second integrated circuits stacked in a second offset configuration, below and to the die-attach paddle; connecting the second integrated circuits and a first edge lead adjacent to the first edge; and encapsulating the first integrated circuits, second integrated circuits, and the die-attach paddle, with the first edge lead and the second edge lead partially exposed.

Abstract: An integrated circuit package system includes a bottom lid, a base integrated circuit over the bottom lid, and a top lid with an integrated circuit window opening over the bottom lid.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a stacking carrier having a cavity; placing a base integrated circuit in the cavity, the base integrated circuit having a base interconnect facing the cavity; mounting a stack integrated circuit to the base integrated circuit; and picking the stack integrated circuit mounted to the base integrated circuit out of the stacking carrier.

Abstract: An integrated circuit package system includes: providing a base package of an elongated rectangular-box shape containing first electrical circuitry and including: forming a rectangular contact strip on and adjacent to a first end of the base package; and forming a base contact pad on and adjacent to a second end of the base package for connection to an electrical interconnect.

Abstract: A method of manufacture of an integrated circuit package system comprises: providing a first integrated circuit die; attaching a second integrated circuit die over the first integrated circuit die and offset from the first integrated circuit die in substantially one dimension; forming an interdie layer over the second integrated circuit die; attaching a third integrated circuit die over the interdie layer and substantially aligned to the second integrated circuit die; and attaching a fourth integrated circuit die over the third integrated circuit die and offset from the third integrated circuit die in substantially the same magnitude and substantially the opposite direction as the second integrated circuit die to the first integrated circuit die.

Abstract: A method of manufacture of an integrated circuit package system includes: providing a package substrate; mounting a first integrated circuit die, having through silicon vias, on the package substrate; coupling cylindrical studs to the package substrate adjacent to the first integrated circuit die; and mounting a second integrated circuit die, having through silicon vias, on the first integrated circuit die and the cylindrical studs for forming an electrical connection among the second integrated circuit die, the first integrated circuit die, the package substrate, or a combination thereof.