Patents by Inventor Chein-Ling Jan

Chein-Ling Jan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optical sensor by using tunneling diode
    Patent number: 6693317
    Abstract: A method of fabricating a tunneling photodiode is presented comprised of the following steps: forming a p-well in an n-type substrate, forming a thin insulating layer over the surface of the p-type material, and then forming a thin n-type layer over the insulating layer. Preferably, the n and p type semiconductor material could be silicon and the insulating layer could be between about 30 to 40 angstroms of gate quality silicon dioxide. In other embodiments of the invention the materials of either electrode are either n or p-type semiconductors or metals.
    Type: Grant
    Filed: May 13, 2003
    Date of Patent: February 17, 2004
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Ho-Yin Yiu, Chein-Ling Jan, Jen-Pan Wang, Lin-June Wu
  • Novel optical sensor by using tunneling diode
    Publication number: 20030203525
    Abstract: A method of fabricating a tunneling photodiode is presented comprised of the following steps: forming a p-well in an n-type substrate, forming a thin insulating layer over the surface of the p-type material, and then forming a thin n-type layer over the insulating layer. Preferably, the n and p type semiconductor material could be silicon and the insulating layer could be between about 30 to 40 angstroms of gate quality silicon dioxide. In other embodiments of the invention the materials of either electrode are either n or p-type semiconductors or metals.
    Type: Application
    Filed: May 13, 2003
    Publication date: October 30, 2003
    Applicant: TAIWAN SEIMICONDUCTOR MANUFACTURING COMPANY
    Inventors: Ho-Yin Yiu, Chein-Ling Jan, Jen-Pan Wang, Lin-June Wu
  • Method of using a tunneling diode in optical sensing devices
    Patent number: 6582981
    Abstract: A method of fabricating a tunneling photodiode is presented comprised of the following steps: forming a p-well in an n-type substrate, forming a thin insulating layer over the surface of the p-type material, and then forming a thin n-type layer over the insulating layer. Preferably, the n and p type semiconductor material could be silicon and the insulating layer could be between about 30 to 40 angstroms of gate quality silicon dioxide. In other embodiments of the invention the materials of either electrode are either n or p-type semiconductors or metals.
    Type: Grant
    Filed: July 13, 2001
    Date of Patent: June 24, 2003
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Ho-Yin Yiu, Chein-Ling Jan, Jen-Pan Wang, Lin-June Wu
  • Novel optical sensor by using tunneling diode
    Publication number: 20010039067
    Abstract: A method of fabricating a tunneling photodiode is presented comprised of the following steps: forming a p-well in an n-type substrate, forming a thin insulating layer over the surface of the p-type material, and then forming a thin n-type layer over the insulating layer. Preferably, the n and p type semiconductor material could be silicon and the insulating layer could be between about 30 to 40 angstroms of gate quality silicon dioxide. In other embodiments of the invention the materials of either electrode are either n or p-type semiconductors or metals.
    Type: Application
    Filed: July 13, 2001
    Publication date: November 8, 2001
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
    Inventors: Ho-Yin Yiu, Chein-Ling Jan, Jen-Pan Wang, Lin-June Wu
  • Optical sensor by using tunneling diode
    Patent number: 6284557
    Abstract: A method of fabricating a tunneling photodiode is presented comprised of the following steps: forming a p-well in an n-type substrate, forming a thin insulating layer over the surface of the p-type material, and then forming a thin n-type layer over the insulating layer. Preferably, the n and p type semiconductor material could be silicon and the insulating layer could be between about 30 to 40 angstroms of gate quality silicon dioxide. In other embodiments of the invention the materials of either electrode are either n or p-type semiconductors or metals.
    Type: Grant
    Filed: October 12, 1999
    Date of Patent: September 4, 2001
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Ho-Yin Yiu, Chein-Ling Jan, Jen-Pan Wang, Lin-June Wu