Abstract: Disclosed is a modified conjugated diene polymer represented by Formula 1. Advantageously, provided are a modified conjugated diene polymer which exhibits superior compatibility with a reinforcing filler, heat generation, tensile strength and abrasion resistance, low fuel consumption and excellent wet skid resistance, a method for preparing the same and a rubber composition comprising the same.

Abstract: Disclosed is a modified conjugated diene polymer represented by Formula 1. Advantageously, provided are a modified conjugated diene polymer which exhibits superior compatibility with a reinforcing filler, heat generation, tensile strength and abrasion resistance, low fuel consumption and excellent wet skid resistance, a method for preparing the same and a rubber composition comprising the same.

Abstract: Provided is a high-performance n-type Schottky barrier tunneling transistor with low Schottky barrier for electrons due to a Schottky junction formed on a Si (111) surface created through anisotropic etching. The Schottky barrier tunneling transistor includes: a silicon on insulator (SOI) substrate; a source and a drain formed on the SOI substrate; a channel formed between the source and the drain; a gate insulating layer and a gate electrode sequentially formed on the channel; and a sidewall insulating layer formed on both sidewalls of the gate insulating layer and the gate electrode, wherein an interface between the source/drain and the channel is on a Si (111) in the channel, and the source and drain consists of metal silicide through silicidation with a predetermined metal and forms a Schottky junction with the silicon channel.

Abstract: Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same. The method includes the steps of: preparing a substrate; forming an active silicon layer on the substrate; forming a gate insulating layer on a region of the silicon layer; forming a gate electrode on the gate insulating layer; implanting ions into the silicon layer on which the gate insulating layer is not formed; and annealing the ion-implanted silicon layer. Accordingly, it is possible to manufacture the Schottky barrier tunnel transistor having stable characteristics and high performance by implanting the ions into the silicon layer using an ion implantation method and then annealing the silicon layer to form metal-silicide.

Abstract: Provided is a semiconductor device and a manufacturing method thereof. The method includes the steps of: forming a thin film transistor including a substrate having a semiconductor layer and silicon, a gate insulation layer formed on the semiconductor layer, a gate electrode formed on the gate insulation layer, and source and drain regions formed in the semiconductor layer; forming a first metal layer on the substrate having the semiconductor layer and the gate electrode; forming a second metal layer on the first metal layer; forming a third metal layer on the second metal layer; forming a nitride layer on the third metal layer; and annealing the substrate having the nitride layer, and forming a silicide layer on the gate electrode and the source and drain regions.

Abstract: Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.

Abstract: A substrate for an LCD display device exhibiting improved display quality through lower contact resistance and elimination of undercutting. The display switches have three electrodes, at least one of which has three metal layers, the third of which is formed by nitrating the second metal layer. The pixel electrode is electrically connected to the second metal layer through a contact hole formed through an insulation layer and the second metal layer of the switching device.

Abstract: A hydraulic elevator system of an inverter control method directly controlling a flow amount of a pressed oil discharged from a hydraulic pump by a speed control of a motor driving the hydraulic pump, which can improve energy efficiency and stability. The hydraulic elevator system includes a reverse check valve connected between a hydraulic cylinder operated by the pressed oil to lift/lower an elevator car and a hydraulic pump driven to discharge the pressed oil, opened to pass the pressed oil by the pressure of the discharged pressed oil in a driving of the hydraulic pump, and closed to prevent the pressed oil from being reversed by using a pilot pressed oil of the hydraulic cylinder as a power source in a stopping of the hydraulic pump; and a pilot hydraulic cylinder operated by the pilot pressed oil from the hydraulic cylinder in order to apply an additional close force to the reverse check valve in the lifting/lowering or emergency stopping of the elevator car.