Patents by Inventor Chelsea M. Jordan

Chelsea M. Jordan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230113573
    Abstract: Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an electrically insulative material at least partially over a first electrically conductive feature and a second electrically conductive feature. The method can further include forming a ring of electrically conductive material around a sidewall of the insulative material defining the opening, wherein the ring of electrically conductive material includes (a) a first via portion over the first electrically conductive feature, (b) a second via portion over the second electrically conductive feature, and (c) connecting portions extending between the first and second via portions. Finally, the method can include removing the connecting portions of the ring of electrically conductive material to electrically isolate the first via portion from the second via portion.
    Type: Application
    Filed: October 21, 2022
    Publication date: April 13, 2023
    Inventors: Trupti D. Gawai, David S. Pratt, Ahmed M. Elsied, David A. Kewley, Dale W. Collins, Raju Ahmed, Chelsea M. Jordan, Radhakrishna Kotti
  • Patent number: 11515204
    Abstract: Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an electrically insulative material at least partially over a first electrically conductive feature and a second electrically conductive feature. The method can further include forming a ring of electrically conductive material around a sidewall of the insulative material defining the opening, wherein the ring of electrically conductive material includes (a) a first via portion over the first electrically conductive feature, (b) a second via portion over the second electrically conductive feature, and (c) connecting portions extending between the first and second via portions. Finally, the method can include removing the connecting portions of the ring of electrically conductive material to electrically isolate the first via portion from the second via portion.
    Type: Grant
    Filed: December 29, 2020
    Date of Patent: November 29, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Trupti D. Gawai, David S. Pratt, Ahmed M. Elsied, David A. Kewley, Dale W. Collins, Raju Ahmed, Chelsea M. Jordan, Radhakrishna Kotti
  • Publication number: 20220208606
    Abstract: Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an electrically insulative material at least partially over a first electrically conductive feature and a second electrically conductive feature. The method can further include forming a ring of electrically conductive material around a sidewall of the insulative material defining the opening, wherein the ring of electrically conductive material includes (a) a first via portion over the first electrically conductive feature, (b) a second via portion over the second electrically conductive feature, and (c) connecting portions extending between the first and second via portions. Finally, the method can include removing the connecting portions of the ring of electrically conductive material to electrically isolate the first via portion from the second via portion.
    Type: Application
    Filed: December 29, 2020
    Publication date: June 30, 2022
    Inventors: Trupti D. Gawai, David S. Pratt, Ahmed M. Elsied, David A. Kewley, Dale W. Collins, Raju Ahmed, Chelsea M. Jordan, Radhakrishna Kotti