Abstract: A memory device comprises a first conductive stripe, a first memory layer, a first conductive pillar, a first dielectric layer and a first conductive plug. The first conductive strip extends along a first direction. The first memory layer extends along a second direction adjacent to and overlapping with the first conductive stripe to define a first memory area thereon. The first conductive pillar extends along the second direction and overlapping with the first memory area. The first dielectric layer extends along the second direction adjacent to the first conductive stripe, the first memory layer and the first conductive pillar. The first conductive plus extends along the second direction and at least overlaps with a portion of the first conductive stripe, wherein the first conductive plus is electrically insulated from the first conductive stripe, the first memory layer and the first conductive pillar by the first dielectric layer.

Abstract: Disclosed is a user terminal for wireless communication with a remote access point. The user terminal may include a mapping module adapted to map one or more input data bits to an uplink symbol, a delay module adapted to apply a delay to the uplink symbol, a transmit module adapted to modulate the delayed symbol into a frequency channel, and an antenna being adapted to transmit the modulated symbol to the access point. The delay can be chosen such that the transmitted symbol arrives at the access point simultaneously with a further symbol modulated into the frequency channel and transmitted by a further user terminal.

Abstract: An interconnect structure includes an insulator stack on an upper surface of a semiconductor substrate. The insulator stack includes a first insulator layer having at least one semiconductor device embedded therein and an etch stop layer interposed between the first insulator layer and a second insulator layer. At least one electrically conductive local contact extends through each of the second insulator layer, etch stop layer and, first insulator layer to contact the at least one semiconductor device. The interconnect structure further includes at least one first layer contact element disposed on the etch stop layer and against the at least one conductive local contact.

Abstract: Disclosed herein is a process for dehydrogenating a saturated cyclic hydrocarbon and/or 5-membered ring compound with a dehydrogenation catalyst. The dehydrogenation catalyst comprises: (i) 0.05 wt % to 5 wt % of a metal selected from Group 14 of the Periodic Table of Elements; and (ii) 0.1 wt % to 10 wt % of a metal selected from Groups 6 to 10 of the Periodic Table of Elements. The process is conducted under dehydrogenation conditions effective to dehydrogenate at least a portion saturated cyclic hydrocarbon and/or 5-membered ring compound.

Abstract: A memory device comprises a tracking control circuit for controlling the write operation or the read operation of the memory device. The tracking control circuit comprises a plurality of tracking cells, wherein the timing characteristics of the tracking cells emulate the timing characteristics of a bit cell during a write operation or a read operation of the memory device. The memory device further comprises at least two reference word lines for configuring the number of tracking cells of the tracking control circuit; and a selection circuit configured to activate one or more of the at least two reference word lines.

Abstract: Embodiments of mechanisms for epitaxially growing one or more doped silicon-containing materials to form source and drain regions of finFET devices are provided in this disclosure. The dopants in the one or more doped silicon-containing materials can be driven into the neighboring lightly-doped-drain (LDD) regions by thermal anneal to dope the regions. The epitaxially growing process uses a cyclical deposition/deposition/etch (CDDE) process. In each cycle of the CDDE process, a first and a second doped materials are formed and a following etch removes most of the second doped material. The first doped material has a higher dopant concentration than the second material and is protected from the etching process by the second doped material. The CDDE process enables forming a highly doped silicon-containing material.

Abstract: Systems, methods, and apparatuses are disclosed for simplifying a point cloud. A point cloud is received where the point cloud has a plurality of points, a global spatial structure, and a local point density. The processor calculates a set of pairwise distances for the plurality of points to at least one other point in the plurality of points. A first distance matrix is generated using the set of pairwise distances. The processor calculates a second pairwise distance set where the plurality of points have a weight and generates a second distance matrix based off the second pairwise distance set. A portion of the points in the second pairwise distance set are removed based on the weight. The processor performs a comparison of the two matrices using the comparison and the global spatial structure and the local point density, and generates a second point cloud based on the second distance matrix.

Abstract: A system for managing email failure notification. The system comprises a data store to store message identifiers for sent emails and a local server computer. The local server computer comprises an analyzer application stored in the memory that, when executed by the processor, analyzes an email return notification comprising information about a failed email, wherein the analyzer application obtains the email return notification via the return path address defined in the return path attribute, reads an entry from the data store based on a message identifier in the email return notification, and updates the entry based on the message identifier. The local server computer further comprises a resolution application stored in the memory that, when executed by the processor, reads entries from the data store associated with failed emails, builds a table on a website with failed email information, and maintains statistics for failed emails.

Abstract: A compound semiconductor device is disclosed. The compound semiconductor device comprises a substrate having at least a first doped region and at least a second doped region; a semiconductor layer disposed on the substrate; and a buffer layer located between said substrate and said semiconductor layer; wherein doping conditions of said first doped region and said second doped region are different from each other; wherein said semiconductor layer has different thicknesses on locations corresponding to said first doped region and said second doped region respectively, and is formed as a structure with difference in thickness.

Abstract: A semiconductor device includes first channel layers disposed over a substrate, a first source/drain region disposed over the substrate, a gate dielectric layer disposed on and wrapping each of the first channel layers, and a gate electrode layer disposed on the gate dielectric layer and wrapping each of the first channel layers. Each of the first channel layers includes a semiconductor wire made of a first semiconductor material. The semiconductor wire extends into the first source/drain region. The semiconductor wire in the first source/drain regions is wrapped around by a second semiconductor material.

Abstract: A metal seal flange assembly for a vacuum system is presented. Its metal gasket has a crossectional shape that is an irregular hexagon with two acute angles between the longest side and the second- and third-longest sides, respectively. The longest side of the irregular hexagon is the vertical inner wall of the metal gasket. This design can reduce the normal force required to seal the metal seal flange assembly and reduce the number of bolts needed, enabling use in a limited working space.

Abstract: The present disclosure provides methods, devices, and computer-readable media for target acquisition in a three dimensional building display are described herein. One or more embodiments include extracting building information modeling semantic data of each of a number of modeled objects in a visual scene of a three dimensional building display, determining a semantic space for each of the number of modeled objects based, at least in part, on the building information modeling semantic data, adjusting a scale factor of the three dimensional building display based, at least in part, on the semantic space of each of the number of modeled objects, and acquiring a target of at least one of the modeled objects using the adjusted scale factor.

Abstract: A database system optimizes database queries that comprise subqueries. The database system factors out computation from two or more subqueries to a reusable subquery. The reusable subquery returns a result set. The subqueries are rewritten to use the result set and the database query modified to use the rewritten subqueries. The modified database query performs efficiently since the result set is computed only once for each subquery that uses the reusable query. The database system also composes nested subqueries that compute aggregate values. The database system identifies an inner subquery nested within an outer subquery, each subquery computing an aggregate value. The database system determines a new aggregate function corresponding to a composition of aggregate functions of the inner and the outer queries. The database system determines a composed query using the inner query with the outer query. The composed query uses the new aggregate function.

Abstract: Periodic over-the-air channel state information (CSI) reporting to serving cells and one or more non-serving cells via a control channel multi-point attachment is disclosed. The channel state information report may be transmitted based on information indicating how to transmit the channel state information report to the non-serving cell. The information indicating how to transmit the channel state information report may be provided by the serving eNodeB. The information may include a periodicity, offset parameters, timing advance commands, power control commands, and/or an aperiodic report request.

Abstract: Aspects of image capture challenge access are described. In one embodiment, an access service of a computing device directs an imaging system to capture an image including facial fiducial features and determine whether the features correspond to an expected set of features. The access service may also issue a request for a response including, for example, a request to tilt or move the computing device, move an individual's face, or contort an individual's facial features. After the request for the response, the access service may capture a response image. The response image may include an adjustment to facial fiducial features. The access service may further determine whether the adjustment to the facial fiducial features corresponds to the request. Depending upon whether the adjustment corresponds to the request, the access service may permit or deny access to features of the computing device.

Abstract: A touch input device includes a planar location sensing board, a depth sensing layer, a first interpretation unit, a second interpretation unit, and a processing unit. The planar location sensing board senses a first electrical variation of different locations in the directions parallel to the planar location sensing board due to an object approaching or touching the planar location sensing board. The depth sensing layer is disposed below the planar location sensing board and separated by a distance from the planar location sensing board. The depth sensing layer senses a second electrical variation corresponding to a degree in which the object presses the planar location sensing board. The first interpretation unit is electrically connected to the planar location sensing board. The second interpretation unit is electrically connected to the depth sensing layer. The processing unit determines a three-dimensional touch location of the object. A touch sensing method is also provided.

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

Abstract: In an approach for storing frames of a video, a computer divides a video into one or more frames. The computer identifies a frame type associated with an individual frame within the divided one or more frames, wherein the identified frame type includes one of the following: an I-frame, a B-frame, and a P-frame. The computer stores the individual frame within a corresponding storage location based on the associated identified frame type.