Patents by Inventor Chen-Chen Calvin Hsueh

Chen-Chen Calvin Hsueh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self-aligned patterning in dual damascene process
    Publication number: 20030157795
    Abstract: A semiconductor manufacturing process that includes providing an insulating material, providing a first photoresist over the insulating material, defining and patterning the first photoresist, anisotropically etching the insulating material to form at least one groove in the insulating material, removing the first photoresist, providing a second photoresist over the insulating material, defining and patterning the second photoresist to form a plurality of tops and sidewalls, depositing a layer of carbon-fluoride material over the tops and sidewalls of the defined and patterned second photoresist, and anisotropically etching the insulating layer to form at least one opening, wherein the at least one opening is aligned with the at least one groove.
    Type: Application
    Filed: February 19, 2002
    Publication date: August 21, 2003
    Applicant: Macronix International Co. Ltd.
    Inventors: Chia-Chi Chung, Chen-Chen Calvin Hsueh