Abstract: Provided is a polishing tool and a methods for polishing a wafer or manufacturing a semiconductor device. A method for polishing a wafer includes contacting a surface of the wafer to a polishing pad at an interface; rotating the wafer and/or the pad; and delivering a series of selected treatment agents to the interface and removing waste from the interface through channels extending through the pad, while controlling a rate of delivering the selected polishing agents and removing the waste streams through the channels formed in the pad to optimize polishing of the wafer.

Abstract: Embodiments of the present disclosure relate to a CMP tool and methods for planarization a substrate. Particularly, embodiments of the present disclosure relate to an in-situ defect data analyzer to identify CMP induced defects during polishing processing and cleaning processing performed in the CMP tool. In some embodiments, the CMP tool includes an AI (artificial intelligence)-assisted defect database. The defect database may be used to identify and classify CMP related defects, such as scratch, fall-on slurry residuals, during polishing or cleaning process. As a result, defect warning cycle time for a CMP process is improved significantly.

Abstract: Disclosed are a chemical mechanical polishing apparatus, a control method for the chemical mechanical polishing apparatus and a chemical mechanical polishing system. In one embodiment, the chemical mechanical polishing apparatus includes a polishing pad, a sensor, a polishing head and a conditioner. The sensor is configured to obtain surface roughness of the polishing pad. The polishing head is located above the polishing pad and configured to polish a wafer which is push against the polishing pad. The conditioner is located on the polishing pad and configured to recondition the polishing pad, wherein the conditioner is operated according to at least one polishing condition, and the polishing condition is tuned according to the surface roughness of the polishing pad.