Abstract: A miniature sieve apparatus is described and includes a first sieve, a separator and a second sieve from top to bottom. The first and second sieves are formed with at least one first mesh and a plurality of second meshes, respectively. The first and second meshes are misaligned with each other in a vertical direction of the first and second sieves. The miniature sieve apparatus is provided to separate or screen microparticles with different sizes, such as target cells, bio-medical particles, organic or inorganic microparticles. Additionally, the invention also provides a manufacturing method of the miniature sieve apparatus, and the same material is applied to manufacture the sieves and the separators. Thus, the problem caused by the residual thermal stress due to different material can be solved. Therefore, the cost of the miniature sieve apparatus can be lowered as the yield rate thereof is improved.

Abstract: A microparticle detecting apparatus is disclosed and includes at least one detection unit, each of which includes: a first sieve having at least a first mesh, a separator stacked on one side of the first sieve and having a separator hole, and a second sieve stacked on one side of the separator and having several second meshes. The diameter of the second mesh is smaller than that of the first mesh, and the first and second meshes are misaligned with each other in a vertical direction of the first and second sieves. The detection unit further includes at least a sensor aligned with the first or second mesh for detecting microparticles trapping into the first mesh or passing through the second mesh. Therefore, the microparticle detecting apparatus is suitably used for detecting or counting any microparticles with different size, to effectively shorten the detection processes of sample fluids.

Abstract: A miniature sieve apparatus is described and includes a first sieve, a separator and a second sieve from top to bottom. The first and second sieves are formed with at least one first mesh and a plurality of second meshes, respectively. The first and second meshes are misaligned with each other in a vertical direction of the first and second sieves. The miniature sieve apparatus is provided to separate or screen microparticles with different sizes, such as target cells, bio-medical particles, organic or inorganic microparticles. Additionally, the invention also provides a manufacturing method of the miniature sieve apparatus, and the same material is applied to manufacture the sieves and the separators. Thus, the problem caused by the residual thermal stress due to different material can be solved. Therefore, the cost of the miniature sieve apparatus can be lowered as the yield rate thereof is improved.

Abstract: The invention disclosed a sensing element integrating silicon nanowire gated-diodes with microfluidic channel, a manufacturing method and a detecting system thereof. The sensing element integrating silicon nanowire gated-diodes with a microfluidic channel includes a silicon nanowire gated-diode, a plurality of reference electrodes, a passivation layer and a microfluidic channel. The reference electrodes are formed on the silicon nanowire gated-diodes, and the passivation layer having a surface decorated with chemical materials is used for covering the silicon nanowire gated-diodes, and the microfluidic channel is connected with the passivation layer. When a detecting sample is connected or absorbed on the surface of the passivation layer, the sensing element integrating silicon nanowire gated-diodes with the microfluidic channel can detect an electrical signal change.

Abstract: A method for measuring an optoelectronic memory device, includes: grounding a source electrode of the optoelectronic memory device; applying a drain electrode voltage to a drain electrode of the optoelectronic memory device and measuring a first current at the drain electrode; using an optical source to illuminate the optoelectronic memory device and measure a first and a second current at the drain electrode; and comparing the sizes of the first current and the second current so as to judge the functional parameters of the optoelectronic memory device.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.

Abstract: The invention disclosed a sensing element integrating silicon nanowire gated-diodes with microfluidic channel, a manufacturing method and a detecting system thereof. The sensing element integrating silicon nanowire gated-diodes with a microfluidic channel comprises a silicon nanowire gated-diode, a plurality of reference electrodes, a passivation layer and a microfluidic channel. The reference electrodes are formed on the silicon nanowire gated-diodes, and the passivation layer having a surface decorated with chemical materials is used for covering the silicon nanowire gated-diodes, and the microfluidic channel is connected with the passivation layer. When a detecting sample is connected or absorbed on the surface of the passivation layer, the sensing element integrating silicon nanowire gated-diodes with the microfluidic channel can detect an electrical signal change.

Abstract: A sensing element includes a field-effect transistor (FET) with an ultra-thin channel, a reference electrode, a first and a second passivation layer, and a microchannel. The first and the second passivation layer enclose a first and a second portion of the FET, respectively. The microchannel is bonded to the first and the second passivation layer, such that the microchannel is extended across the channel of the ultra-thin channel FET. The ultra-thin channel has a chemically or physically modified surface. When an analyte to be tested passes through the microchannel and is in contact with the modified surface of the ultra-thin channel, it results in changes in the conductance of the ultra-thin channel FET. Trace detection may be conducted on the analyte by observing changes in the conductance. A method for manufacturing the sensing element and a biological detection system employing the sensing element are also provided.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.

Abstract: A clutching device has a spindle, a gear, a sliding rod and a pin. The spindle has an opening defined in one end of the spindle and a pin channel defined in the outer surface and communicating with the opening. The gear is mounted on the spindle and has an annular flange formed on a side facing the pin channel and multiple engaging notches radially defined in the flange and corresponding to the pin channel. The sliding rod is slidably inserted into the opening with a first end of the sliding rod and has a second end exposed from the opening. The pin is attached to the first end of the sliding rod, extends through the pin channel in the spindle and selectively engages with one of the engaging notches in the flange on the gear. Accordingly, a simplified clutching device is provided to conveniently disengage a spindle from a gear.