Abstract: A conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate. An oxide is removed from sidewalls of the first conductive gate and a dielectric material is applied to the sidewalls. Spacers adjacent to the conductive gate are removed to form voids, and the voids are capped with a dielectric material to form air spacers.

Abstract: A modular mask including a first module including a frame having two or more openings, and an attaching mechanism lining one or more edges of the two or more openings; and a second module including: a mask body having a first attaching element allowing the attaching mechanism to temporarily hold the mask body in place completely covering a first opening of the two or more openings, and a filter component having a second attaching element allowing the attaching mechanism to temporarily hold the filter component in place completely covering a second opening of the two or more openings.

Abstract: An enhanced sensitivity laser vibrometer with increased output signal strength and more sensitive surface vibration detection, is provided by using a reflective mirror assembly to repeatedly bounce the sensing laser beam against the acoustic pressure-sensing diaphragm to magnify the acoustic incident pressure wave being detected. The enhancement in signal strength, in terms of power spectral density, is a function of the number of bounces squared and the detection of surface vibrations with a displacement of smaller than 4 picometers is demonstrated experimentally.

Abstract: Disclosed herein are a junction where electrical interconnects on a semiconductor substrate intersect and a method of manufacturing a junction where electrical interconnects on a semiconductor substrate intersect is disclosed. In one embodiment, the junction includes a portion of at least one current providing electrical interconnect having a length parallel to a longitudinal axis thereof and configured to provide a flow of electrical current. In addition, the junction includes a portion of at least one current receiving electrical interconnect having a length parallel to a longitudinal axis thereof and configured to intersect with the at least one current providing interconnect at the junction in order to receive the flow of electrical current from the at least one current providing interconnect.

Abstract: Disclosed herein are a junction where electrical interconnects on a semiconductor substrate intersect and a method of manufacturing a junction where electrical interconnects on a semiconductor substrate intersect is disclosed. In one embodiment, the junction includes a portion of at least one current providing electrical interconnect having a length parallel to a longitudinal axis thereof and configured to provide a flow of electrical current. In addition, the junction includes a portion of at least one current receiving electrical interconnect having a length parallel to a longitudinal axis thereof and configured to intersect with the at least one current providing interconnect at the junction in order to receive the flow of electrical current from the at least one current providing interconnect.

Abstract: Device and method for exposing photoresists on semiconductor wafers without using physical masks while improving significantly the time- and cost-efficiencies for the manufacturing of integrated-circuit chips. Two electromagnetic sources of different wavelengths are used as the light sources, with the one having longer wavelength functioning as the control light beam while the one with an appropriately shorter wavelength is used to eventually expose the photoresists on semiconductor wafers. Images of the desired circuit patterns are first imposed onto the longer wavelength control light beam using, for example but not limited to, laser diode arrays, light emitting diode arrays, and devices similar to liquid crystal displays. The image-carrying control light beam interacts inside the bi-wavelength saturable absorber with the short-wavelength exposure light beam which carries initially a uniform intensity profile.

Abstract: This invention is a device and method for the measurement of optical path length. A frequency chirped electromagnetic wave source, such as a laser beam, is split into two branches. A reference branch is projected directly onto a photosensor, while a probe branch is launched towards a target whose distance relative to the reference path is to be determined. A reflected wave from the target is collected and mixed with the reference onto a photosensor. Due to the unequal path lengths traveled by the reference and the reflected probe laser beams as well as the chirped nature of their frequencies, a certain optical frequency difference exists between the two beams. This frequency difference is linearly proportional to the relative optical path length difference between the two laser beams and the relative optical path length can be readily determined by using a photosensor that generates photocurrents linearly proportional to the relative optical frequency differences between the reference and reflected branches.

Abstract: An apparatus of preventing integrated circuits from interfering by electrostatic-discharge (ESD), applied in an internal circuit and an input pad, both coupled with a first power line and a second power line, comprises a voltage clamp circuit and a voltage bias circuit. The voltage clamp circuit, with a transistor, connects to the second power line for clamping potential level through the voltage clamp circuit. The voltage bias circuit, with at least one diode coupled in series, connects to the voltage clamp circuit and the first power line for biasing the voltage clamp circuit to the second power line.