Abstract: An over-current protection device includes first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer includes a polymer matrix, a conductive filler, and a titanium-containing dielectric filler. The polymer matrix has a fluoropolymer. The titanium-containing dielectric filler has a compound represented by a general formula of MTiO3, wherein the M represents transition metal or alkaline earth metal. The total volume of the PTC material layer is calculated as 100%, and the titanium-containing dielectric filler accounts to for 5-15% by volume of the PTC material layer.

Abstract: An annular airflow regulating apparatus includes a cup-shaped element and an adjustment element. The cup-shaped element has a bowl and a bottom, integrated to form a first chamber. The bottom has a tapered channel parallel to an axis and penetrating through the bottom. A ring-shaped groove is disposed between the tapered channel and the bottom. The ring-shaped groove has an annular plane perpendicular to the axis. The adjustment element, having a tapered portion and second holes, is movably disposed in the cup-shaped element. The tapered portion protrudes into the tapered channel A tapered annular gap is formed between the tapered portion and the tapered channel. When the adjustment element is moved with respect to the cup-shaped element, a width of the tapered annular gap is varied, and thereupon a flow rate and velocity of the process gas would be varied accordingly.

Abstract: The present disclosure provides a multi-state one-time programmable (MSOTP) memory circuit including a memory cell and a programming voltage driving circuit. The memory cell includes a MOS storage transistor, a first MOS access transistor and a second MOS access transistor electrically connected to store two bits of data. When the memory cell is in a writing state, the programming voltage driving circuit outputs a writing control potential to the gate of the MOS storage transistor, and when the memory cell is in a reading state, the programming voltage driving circuit outputs a reading control potential to the gate of the MOS storage transistor.

Abstract: A method of patterning a material layer of a semiconductor device is disclosed, the method including treating a material layer above a semiconductor substrate with plasma oxygen; depositing a layer of photoresist over a first surface of the material layer after the treating of the material layer; patterning the layer of photoresist, thereby forming a patterned photoresist, exposing portions of the material layer; etching the exposed portions of at least the material layer to form at least one contact via in the material layer extending to a source or drain region of a device at a surface of the substrate; and removing the patterned photoresist from the first surface of the material layer.