Abstract: A semiconductor device includes a substrate having fins and trenches in between the fins, a plurality of insulators, a first metal layer, an insulating layer, a second metal layer and an interlayer dielectric. The insulators are disposed within the trenches of the substrate. The first metal layer is disposed on the plurality of insulators and across the fins. The insulating layer is disposed on the first metal layer over the plurality of insulators and across the fins. The second metal layer is disposed on the insulating layer over the plurality of insulators and across the fins. The interlayer dielectric is disposed on the insulators and covering the first metal layer, the insulating layer and the second metal layer.

Abstract: A container for receiving a semiconductor device is provided. In one embodiment, the wafer holder assembly includes a first wafer holder with a plurality of first fingers arranged in a first common horizontal plane and a second wafer holder with a plurality of second fingers arranged in a second common horizontal plane. The first wafer holder and the second holder are configured to move relative to each other in a vertical direction, and the first wafer holder and the second holder are configured to rotate relative to each other around a vertical axis.

Abstract: Embodiments of the present disclosure relate to methods for forming a film stack during fabrication or bonding process. The film stack according to present disclosure may reduce wet dip attacking to semiconductor substrate during bonding, such as bonding between an image sensor substrate and a logic device substrate. The film stack according to the present disclosure may be used to modulate stress and wafer warpage to improve bonding adhesion and device performance during various packaging schemes, such as CoWoS, SoIC, or the like. The film stack according to the present disclosure may be used to improve bonding process and device performance in both wafer-to-wafer bonding and die-to-die bonding.

Abstract: A method includes: placing a semiconductor wafer in a chamber during a semiconductor fabrication process; providing a semiconductor cleaning apparatus, the semiconductor cleaning apparatus comprising: a first inlet configured to receive a carrier gas; a gas passageway connected to the first inlet; a second inlet configured to receive one or more fluids; and a fluid passageway connected to the second inlet; delivering the carrier gas from the first inlet to the at least one gas passage branch through the gas passageway; spraying the carrier gas onto the semiconductor wafer; delivering the one or more fluids from the second inlet to the at least one fluid passage branch through the fluid passageway; and spraying the one or more fluids onto the semiconductor wafer.

Abstract: A container for receiving a semiconductor device is provided. In one embodiment, the container includes an interior space, a first light reflecting coating in the interior space, a light emitter configured to emit a light from an outside of the interior space into the interior space and toward the first light reflecting coating, and a detector configured to detect the light emitted from the light emitter and reflected by the first light reflecting coating.

Abstract: Semiconductor device structure and methods of forming the same are described. The structure includes a first dielectric layer including a first portion disposed over a source/drain region in an active region of a substrate and a modulation portion over an interlayer dielectric (ILD) in a resistor region of the substrate, the first portion of the first dielectric layer has a first composition, and the modulation portion of the first dielectric layer has a second composition different from the first composition. The structure further includes a resistor layer disposed on the modulation portion of the first dielectric layer in the resistor region and a second dielectric layer disposed over the first dielectric layer in the active region and over the resistor layer in the resistor region.

Abstract: A work piece holder provided herein includes a support baffle and an elevating element. The support baffle extends along an arc path. The elevating clement is disposed on the support baffle and is pivoted to be movable between an unlock status and a lock status.

Abstract: Semiconductor device structure and methods of forming the same are described. The structure includes a first dielectric layer including a first portion disposed over a source/drain region in an active region of a substrate and a modulation portion over an interlayer dielectric (ILD) in a resistor region of the substrate, the first portion of the first dielectric layer has a first composition, and the modulation portion of the first dielectric layer has a second composition different from the first composition. The structure further includes a resistor layer disposed on the modulation portion of the first dielectric layer in the resistor region and a second dielectric layer disposed over the first dielectric layer in the active region and over the resistor layer in the resistor region.

Abstract: A method for forming a semiconductor structure includes following operations. First fins are formed in a first region of a substrate, and second fins are formed in a second region of the substrate. Widths of the first fins are greater than widths of the second fins. An isolation structure is formed over the substrate. A first ion implantation is performed on the first fins. A portion of the isolation structure is removed to expose a portion of each first fin and a portion of each second fin. The widths of the first fins are equal to or less than the widths of the second fins after the removing of the portion of the isolation structure. A 3D capacitor is formed in the first region, and a FinFET device is formed in the second region. The 3D capacitor includes the first fins, and the FinFET device includes the second fins.

Abstract: A semiconductor cleaning tool is provided. The cleaning tool comprises a nozzle. The nozzle is connected with a first inlet to receive a carrier gas and a second inlet to receive one or more fluids. The nozzle comprises a gas passageway connected to the first inlet; and fluid passageway connected to the second inlet. The gas passageway comprises gas passage branches and the fluid passageway comprises fluid passage branches. The gas passage branches and the fluid passage branches are arranged interweavingly in the nozzle. Individual gas/fluid passage branches are controllable indecently and separately including a flow rate, a temperature, an on/off state, a type of fluid(s) or carrier gas, a time period, a supply mode, and/or any other aspects of spraying the fluid(s) and carrier gas through the individual gas passage branches and the individual fluid passage branches.

Abstract: Semiconductor device structure and methods of forming the same are described. The structure includes a first dielectric layer including a first portion disposed over a source/drain region in an active region of a substrate and a modulation portion over an interlayer dielectric (ILD) in a resistor region of the substrate, the first portion of the first dielectric layer has a first composition, and the modulation portion of the first dielectric layer has a second composition different from the first composition. The structure further includes a resistor layer disposed on the modulation portion of the first dielectric layer in the resistor region and a second dielectric layer disposed over the first dielectric layer in the active region and over the resistor layer in the resistor region.

Abstract: A semiconductor structure is provided. The semiconductor structure includes an interconnection structure, a first conductive pad, a second conductive pad, a conductive material and a conductive coil. The first and second conductive pads are disposed over and electrically connected to the interconnection structure individually. The conductive material is electrically isolated from the interconnection structure, wherein bottom surfaces of the conductive material, the first conductive pad and the second conductive pad are substantially aligned. The conductive coil is disposed in the interconnection structure and overlapped by the conductive material. A manufacturing method of a semiconductor structure is also provided.

Abstract: A method for manufacturing a semiconductor structure is provided. The method may include several operations. A first layer is formed over a first region and a second region of a substrate. A first etching is performed on the first layer, thereby forming a first trench in the first region and a second trench in the second region. A first amorphization is performed on the first layer in the second region. A second etching is performed on the first layer, wherein an etching rate of the second etching in the second region is greater than an etching rate of the second etching in the first region.

Abstract: A semiconductor structure and a method are provided. The method includes patterning a substrate to form a first fin structure in a first region and a second fin structure in a second region, wherein a first width of the first fin structure is greater than a second width of the second fin structure; forming a protecting layer on the second fin structure; and forming a first oxide layer over the first fin structure and forming a second oxide layer over the protecting layer, wherein a width of the first oxide layer is greater than a width of the second oxide layer.

Abstract: The present disclosure describes a semiconductor device having an isolation structure with a protection layer. The semiconductor device includes a substrate, a transistor with a source/drain (S/D) structure on the substrate, and an isolation structure on the substrate and adjacent to the transistor. The isolation structure includes a dielectric structure on the substrate, a protection layer on the dielectric structure, and a gate structure on the protection layer. The protection layer is disposed between the gate structure and the S/D structure.

Abstract: A semiconductor device with different gate structures and a method of fabricating the same are disclosed. The a method includes forming a fin structure on a substrate, forming a thermal oxide layer on top and side surfaces of the fin structure, forming a polysilicon structure on the thermal oxide layer, doping portions of the fin structure uncovered by the polysilicon structure to form doped fin portions, forming a nitride layer on the polysilicon structure and the thermal oxide layer, forming an oxide layer on the nitride layer, doping the nitride layer with halogen ions, forming a source/drain region in the fin structure and adjacent to the polysilicon structure, and replacing the polysilicon structure with a gate structure.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The first mask layer has a first trench, and the first trench has a first inner wall and a bottom surface. The method includes forming an anti-bombardment layer over a first top surface of the first mask layer. The method includes forming a second mask layer over the first inner wall of the first trench. The method includes removing the first portion, the first mask layer, the anti-bombardment layer, and the second mask layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The first mask layer has a first trench, and the first trench has a first inner wall and a bottom surface. The method includes forming an anti-bombardment layer over a first top surface of the first mask layer. The method includes forming a second mask layer over the first inner wall of the first trench. The method includes removing the first portion, the first mask layer, the anti-bombardment layer, and the second mask layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The method includes forming a second mask layer over a first top surface of the first mask layer, the inner wall, and the bottom surface. The method includes removing the second mask layer covering the bottom surface to form a second trench in the second mask layer. The method includes forming an anti-bombardment layer over a second top surface of the second mask layer. The second mask layer and the anti-bombardment layer are made of different materials. The method includes removing the first portion, the first mask layer, the second mask layer, and the anti-bombardment layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The method includes forming a second mask layer over a first top surface of the first mask layer, the inner wall, and the bottom surface. The method includes removing the second mask layer covering the bottom surface to form a second trench in the second mask layer. The method includes forming an anti-bombardment layer over a second top surface of the second mask layer. The second mask layer and the anti-bombardment layer are made of different materials. The method includes removing the first portion, the first mask layer, the second mask layer, and the anti-bombardment layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.