Patents by Inventor Chen-Chien Chang
Chen-Chien Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220336659Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.Type: ApplicationFiled: June 29, 2022Publication date: October 20, 2022Inventors: Hung-Chou Lin, Yi-Cheng Chiu, Karthick Murukesan, Yi-Min Chen, Shiuan-Jeng Lin, Wen-Chih Chiang, Chen-Chien Chang, Chih-Yuan Chan, Kuo-Ming Wu, Chun-Lin Tsai
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Patent number: 11424359Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.Type: GrantFiled: January 6, 2021Date of Patent: August 23, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Chou Lin, Yi-Cheng Chiu, Karthick Murukesan, Yi-Min Chen, Shiuan-Jeng Lin, Wen-Chih Chiang, Chen-Chien Chang, Chih-Yuan Chan, Kuo-Ming Wu, Chun-Lin Tsai
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Publication number: 20210313416Abstract: The present disclosure relates to a semiconductor structure. The semiconductor structure includes a lower electrode over a substrate, a first capacitor dielectric layer over the lower electrode, an intermediate electrode over the first capacitor dielectric layer, and a second capacitor dielectric layer is over the intermediate electrode. An upper electrode is over the second capacitor dielectric layer. The upper electrode is completely confined over the intermediate electrode. A first protection layer is completely confined over the intermediate electrode. The first protection layer covers opposing sidewalls of the upper electrode and upper surfaces of the intermediate electrode and the upper electrode.Type: ApplicationFiled: June 17, 2021Publication date: October 7, 2021Inventors: Guo-Jyun Luo, Chen-Chien Chang, Chiu-Hua Chung, Shiuan-Jeng Lin, Han-Zong Pan
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Publication number: 20210159334Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.Type: ApplicationFiled: January 6, 2021Publication date: May 27, 2021Inventors: Hung-Chou Lin, Yi-Cheng Chiu, Karthick Murukesan, Yi-Min Chen, Shiuan-Jeng Lin, Wen-Chih Chiang, Chen-Chien Chang, Chih-Yuan Chan, Kuo-Ming Wu, Chun Lin Tsai
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Patent number: 10892360Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.Type: GrantFiled: October 29, 2018Date of Patent: January 12, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hung-Chou Lin, Yi-Cheng Chiu, Karthick Murukesan, Yi-Min Chen, Shiuan-Jeng Lin, Wen-Chih Chiang, Chen-Chien Chang, Chih-Yuan Chan, Kuo-Ming Wu, Chun-Lin Tsai
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Publication number: 20200373380Abstract: The present disclosure relates to a semiconductor device structure. The semiconductor device structure has a first conductive layer disposed over a substrate and a first capacitor dielectric layer comprising a first dielectric material disposed over the first conductive layer. A second conductive layer is over the first capacitor dielectric layer, a second capacitor dielectric layer comprising a second dielectric material is disposed over the second conductive layer, and a third conductive layer is over the second capacitor dielectric layer. A first barrier layer is disposed between an upper surface of the first conductive layer and a lower surface of the first capacitor dielectric layer.Type: ApplicationFiled: August 12, 2020Publication date: November 26, 2020Inventors: Guo-Jyun Luo, Chen-Chien Chang, Chiu-Hua Chung, Shiuan-Jeng Lin, Han-Zong Pan
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Patent number: 10748986Abstract: A semiconductor device structure and the formation method thereof are provided. The semiconductor device structure includes a semiconductor substrate and a first capacitor and a second capacitor over the semiconductor substrate. The first capacitor has a first capacitor dielectric layer, and the second capacitor has a second capacitor dielectric layer. The first capacitor dielectric layer is between the second capacitor dielectric layer and the semiconductor substrate. The first capacitor and the second capacitor are electrically connected in parallel. The first capacitor has a first linear temperature coefficient and a first quadratic voltage coefficient. The second capacitor has a second linear temperature coefficient and a second quadratic voltage coefficient. One or both of a first ratio of the first linear temperature coefficient to the second linear temperature coefficient and a second ratio of the first quadratic voltage coefficient to the second quadratic voltage coefficient is negative.Type: GrantFiled: March 29, 2018Date of Patent: August 18, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Guo-Jyun Luo, Shiuan-Jeng Lin, Chiu-Hua Chung, Chen-Chien Chang, Han-Zong Pan
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Publication number: 20190165167Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.Type: ApplicationFiled: October 29, 2018Publication date: May 30, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hung-Chou LIN, Yi-Cheng CHIU, Karthick MURUKESAN, Yi-Min CHEN, Shiuan-Jeng LIN, Wen-Chih CHIANG, Chen-Chien CHANG, Chih-Yuan CHAN, Kuo-Ming WU, Chun-Lin TSAI
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Publication number: 20190157378Abstract: A semiconductor device structure and the formation method thereof are provided. The semiconductor device structure includes a semiconductor substrate and a first capacitor and a second capacitor over the semiconductor substrate. The first capacitor has a first capacitor dielectric layer, and the second capacitor has a second capacitor dielectric layer. The first capacitor dielectric layer is between the second capacitor dielectric layer and the semiconductor substrate. The first capacitor and the second capacitor are electrically connected in parallel. The first capacitor has a first linear temperature coefficient and a first quadratic voltage coefficient. The second capacitor has a second linear temperature coefficient and a second quadratic voltage coefficient. One or both of a first ratio of the first linear temperature coefficient to the second linear temperature coefficient and a second ratio of the first quadratic voltage coefficient to the second quadratic voltage coefficient is negative.Type: ApplicationFiled: March 29, 2018Publication date: May 23, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Guo-Jyun LUO, Shiuan-Jeng LIN, Chiu-Hua CHUNG, Chen-Chien CHANG, Han-Zong PAN
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Patent number: 9680009Abstract: In some embodiments, a semiconductor device includes a transistor, an isolation component, and a conductive layer. The transistor includes a source region and a drain region. The isolation component surrounds the source region. The conductive layer is configured for interconnection of the drain region. The conductive component is between the conductive layer and the isolation component, configured to shield the isolation component from an electric field over the isolation component.Type: GrantFiled: October 29, 2015Date of Patent: June 13, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Karthick Murukesan, Yi-Cheng Chiu, Hung-Chou Lin, Chih-Yuan Chan, Yi-Min Chen, Chen-Chien Chang, Chiu-Hua Chung, Fu-Chih Yang, Chun Lin Tsai
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Publication number: 20170125582Abstract: In some embodiments, a semiconductor device includes a transistor, an isolation component, and a conductive layer. The transistor includes a source region and a drain region. The isolation component surrounds the source region. The conductive layer is configured for interconnection of the drain region. The conductive component is between the conductive layer and the isolation component, configured to shield the isolation component from an electric field over the isolation component.Type: ApplicationFiled: October 29, 2015Publication date: May 4, 2017Inventors: KARTHICK MURUKESAN, YI-CHENG CHIU, HUNG-CHOU LIN, CHIH-YUAN CHAN, YI-MIN CHEN, CHEN-CHIEN CHANG, CHIU-HUA CHUNG, FU-CHIH YANG, CHUN LIN TSAI
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Patent number: 9472690Abstract: The present disclosure provides a deep trench capacitor device. A first capacitor electrode is made up of a doped region of semiconductor substrate in which two or more trenches are arranged. A second capacitor electrode is made up of a continuous body of conductive material. The continuous body of conductive material includes a lower body portion filling the two or more trenches and an upper body portion extending continuously over the lower body portion. The upper body portion extends upwardly out of the trenches by a non-zero distance. A capacitor dielectric liner is arranged in the two or more trenches to separate the first and second capacitor electrodes. The capacitor dielectric liner extends continuously out of the two or more trenches along outer sidewalls of the upper body portion.Type: GrantFiled: June 30, 2014Date of Patent: October 18, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wu-An Weng, Chen-Chien Chang
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Patent number: 9012296Abstract: A method for forming a trench capacitor includes providing a substrate of a semiconductor material having a hard mask layer; etching the hard mask layer and the substrate to form at least one trench extending into the substrate; and performing pull-back etching on the hard mask layer. In the pull-back etching, a portion of the hard mask layer defining and adjacent to side walls of an opening of the at least one trench is removed. A resulting opening on the hard mask layer has a width dimension larger than a width dimension of an opening of the at least one trench extending into the substrate. The method further comprises doping the semiconductor material defining upper surfaces and sidewalls of the at least one trench to form a doped well region.Type: GrantFiled: December 11, 2012Date of Patent: April 21, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wu-An Weng, Chen-Chien Chang
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Publication number: 20140327109Abstract: The present disclosure provides a deep trench capacitor device. A first capacitor electrode is made up of a doped region of semiconductor substrate in which two or more trenches are arranged. A second capacitor electrode is made up of a continuous body of conductive material. The continuous body of conductive material includes a lower body portion filling the two or more trenches and an upper body portion extending continuously over the lower body portion. The upper body portion extends upwardly out of the trenches by a non-zero distance. A capacitor dielectric liner is arranged in the two or more trenches to separate the first and second capacitor electrodes. The capacitor dielectric liner extends continuously out of the two or more trenches along outer sidewalls of the upper body portion.Type: ApplicationFiled: June 30, 2014Publication date: November 6, 2014Inventors: Wu-An Weng, Chen-Chien Chang
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Patent number: 8853048Abstract: The present disclosure provides a streamlined approach to forming vertically structured devices such as deep trench capacitors. Trenches and a contact plate bridging the trenches are formed using one lithographic process. A hard mask is formed over the substrate and etched through the mask to form two or more closely spaced trenches. The hard mask is then reduced by an isotropic etch process. The etch removes the hard mask preferentially between the trenches. Chemical mechanical polishing removes the conductive material down to the remaining hard mask layer, whereby conductive material remains in mask openings and forms a conductive bridge across the trenches.Type: GrantFiled: November 1, 2012Date of Patent: October 7, 2014Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wu-An Weng, Chen-Chien Chang
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Publication number: 20140159197Abstract: A method for forming a trench capacitor includes providing a substrate of a semiconductor material having a hard mask layer; etching the hard mask layer and the substrate to form at least one trench extending into the substrate; and performing pull-back etching on the hard mask layer. In the pull-back etching, a portion of the hard mask layer defining and adjacent to side walls of an opening of the at least one trench is removed. A resulting opening on the hard mask layer has a width dimension larger than a width dimension of an opening of the at least one trench extending into the substrate. The method further comprises doping the semiconductor material defining upper surfaces and sidewalls of the at least one trench to form a doped well region.Type: ApplicationFiled: December 11, 2012Publication date: June 12, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wu-An WENG, Chen-Chien CHANG
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Publication number: 20140120690Abstract: The present disclosure provides a streamlined approach to forming vertically structured devices such as deep trench capacitors. Trenches and a contact plate bridging the trenches are formed using one lithographic process. A hard mask is formed over the substrate and etched through the mask to form two or more closely spaced trenches. The hard mask is then reduced by an isotropic etch process. The etch removes the hard mask preferentially between the trenches. Chemical mechanical polishing removes the conductive material down to the remaining hard mask layer, whereby conductive material remains in mask openings and forms a conductive bridge across the trenches.Type: ApplicationFiled: November 1, 2012Publication date: May 1, 2014Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wu-An Weng, Chen-Chien Chang