Abstract: A strain engineered material including a monolayer graphene sheet comprising an array of wrinkles induced by deformations in the graphene sheet, the deformations formed by a lattice of underlying nanostructures on a substrate. The lattice of nanostructures comprises rows of the nanostructures and each of the wrinkles comprise a ridge aligned on top of a different one of the rows and along an alignment direction defined by the rows. The deformations pattern a strain distribution in the graphene sheet that induces a periodically varying pseudo magnetic field distribution ranging between a positive value and a negative values. The periodically varying pseudo magnetic field distribution has field magnitude minima located parallel to and between the ridges and field magnitude maxima located near to and parallel to each of the ridges and can be designed for various valleytronic and spintronic device applications.

Abstract: A strain engineered material including a monolayer graphene sheet comprising an array of wrinkles induced by deformations in the graphene sheet, the deformations formed by a lattice of underlying nanostructures on a substrate. The lattice of nanostructures comprises rows of the nanostructures and each of the wrinkles comprise a ridge aligned on top of a different one of the rows and along an alignment direction defined by the rows. The deformations pattern a strain distribution in the graphene sheet that induces a periodically varying pseudo magnetic field distribution ranging between a positive value and a negative values, The periodically varying pseudo magnetic field distribution has field magnitude minima located parallel to and between the ridges and field magnitude maxima located near to and parallel to each of the ridges and can be designed for various valleytronic and spintronic device applications.

Abstract: A method of forming vertical graphene nanostripes comprising one or several monolayers and characterized by a thickness normal to the one or several monolayers, a length orthogonal to the thickness, and a width orthogonal to the thickness includes providing a substrate, subjecting the substrate to a reduced pressure environment in a processing chamber, and providing methane gas and C6-containing precursor. The method also includes flowing the methane gas and the C6-containing precursor into the processing chamber, establishing a partial pressure ratio of the C6-containing precursor to methane gas in the processing chamber, and generating a plasma. The method further includes exposing at least a portion of the substrate to the methane gas, the C6-containing precursor, and the plasma and growing the vertical graphene nanostripes coupled to the at least a portion of the substrate, wherein the thickness of the vertical graphene nanostripes extends parallel to the substrate.

Abstract: A method of forming vertical graphene nanostripes comprising one or several monolayers and characterized by a thickness normal to the one or several monolayers, a length orthogonal to the thickness, and a width orthogonal to the thickness includes providing a substrate, subjecting the substrate to a reduced pressure environment in a processing chamber, and providing methane gas and C6-containing precursor. The method also includes flowing the methane gas and the C6-containing precursor into the processing chamber, establishing a partial pressure ratio of the C6-containing precursor to methane gas in the processing chamber, and generating a plasma. The method further includes exposing at least a portion of the substrate to the methane gas, the C6-containing precursor, and the plasma and growing the vertical graphene nanostripes coupled to the at least a portion of the substrate, wherein the thickness of the vertical graphene nanostripes extends parallel to the substrate.

Abstract: A method of forming graphene nanostripes includes providing a substrate comprising at least one of copper foil or nickel foam and subjecting the substrate to a reduced pressure environment in a processing chamber. The method also includes providing methane gas and 1,2-dichlorobenzene (1,2-DCB) gas, flowing the methane gas and the 1,2-DCB into the processing chamber, and establishing a partial pressure ratio of 1,2-DCB gas to methane gas in the processing chamber. The partial pressure ratio is between 0 and 3. The method further includes generating a plasma, thereafter, exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma, and growing the graphene nanostripes coupled to the at least a portion of the substrate.

Abstract: A method of forming graphene nanostripes includes providing a substrate comprising at least one of copper foil or nickel foam and subjecting the substrate to a reduced pressure environment in a processing chamber. The method also includes providing methane gas and 1,2-dichlorobenzene (1,2-DCB) gas, flowing the methane gas and the 1,2-DCB into the processing chamber, and establishing a partial pressure ratio of 1,2-DCB gas to methane gas in the processing chamber. The partial pressure ratio is between 0 and 3. The method further includes generating a plasma, thereafter, exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma, and growing the graphene nanostripes coupled to the at least a portion of the substrate.