Patents by Inventor Chen-Chih Tsai
Chen-Chih Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230405765Abstract: The invention provides a composition for preparing a chemical-mechanical polishing pad via photopolymerization and heating, the composition comprising a first component comprising: one or more acrylate-blocked isocyanates, one or more acrylate monomers and at least one photoinitiator. The composition further comprising a second component comprising one or more amine curatives. The invention also provides a method of forming a chemical-mechanical polishing pad comprising preparing a composition comprising: a first component comprising one or more acrylate-blocked isocyanates, one or more acrylate monomers and at least one photoinitiator. The composition further comprising a second component comprising one or more amine curatives. The method further comprising exposing at least a layer of the composition to ultraviolet light, thereby initiating a polymerization reaction and thus forming at least a layer of solidified pad material; and heating the layer.Type: ApplicationFiled: June 15, 2023Publication date: December 21, 2023Inventor: Chen-Chih TSAI
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Patent number: 11845156Abstract: A chemical-mechanical polishing pad comprising a thermosetting polyurethane polishing layer includes an isocyanate-terminated urethane prepolymer, a polyamine curative, and a cyclohexanedimethanol curative. The polyamine curative and the cyclohexanedimethanol curative are in a molar ratio of polyamine curative to cyclohexanedimethanol curative in a range from about 20:1 to about 1:1.Type: GrantFiled: July 8, 2020Date of Patent: December 19, 2023Assignee: CMC MATERIALS, INC.Inventors: Rui Ma, Lin Fu, Chen-Chih Tsai, Jaeseok Lee, Sarah Brosnan
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Patent number: 11845157Abstract: A chemical mechanical polishing (CMP) pad includes a polishing portion formed using a vat-based additive manufacturing process. The polishing portion includes a polymer material with a first elastic modulus. In some embodiments the polishing portion is disposed on the backing portion. The backing portion may have a second elastic modulus. The second elastic modulus may be less than the first elastic modulus.Type: GrantFiled: May 7, 2020Date of Patent: December 19, 2023Assignee: CMC MATERIALS, INC.Inventors: Eric S. Moyer, Lin Fu, William Michael Spitzig, Chen-Chih Tsai, Ping Huang, Justin Stewart, Carlos Barros
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Patent number: 11807710Abstract: The invention provides a UV-curable resin for forming a chemical-mechanical polishing pad comprising: (a) one or more acrylate blocked isocyanates; (b) one or more acrylate monomers; and (c) a photoinitiator. The invention also provides a method of forming a chemical-mechanical polishing pad using the UV-curable resin.Type: GrantFiled: October 18, 2021Date of Patent: November 7, 2023Assignee: CMC Materials, Inc.Inventors: Chen-Chih Tsai, Eric S. Moyer, Ping Huang
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Publication number: 20220193860Abstract: A subpad for a chemical-mechanical polishing pad, the subpad having porogens with polymeric shells. Methods of fabricating the subpad and polishing pads with a polishing surface layer bonded to the subpad layer are also described.Type: ApplicationFiled: December 21, 2021Publication date: June 23, 2022Inventors: Dustin MILLER, Paul Andre LEFEVRE, Aaron PETERSON, Chen-Chih TSAI
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Publication number: 20220119586Abstract: The invention provides a UV-curable resin for forming a chemical-mechanical polishing pad comprising: (a) one or more acrylate blocked isocyanates; (b) one or more acrylate monomers; and (c) a photoinitiator. The invention also provides a method of forming a chemical-mechanical polishing pad using the UV-curable resin.Type: ApplicationFiled: October 18, 2021Publication date: April 21, 2022Inventors: Chen-Chih TSAI, Eric S. Moyer, Ping Huang
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Publication number: 20210008687Abstract: A chemical-mechanical polishing pad comprising a thermosetting polyurethane polishing layer includes an isocyanate-terminated urethane prepolymer, a polyamine curative, and a cyclohexanedimethanol curative. The polyamine curative and the cyclohexanedimethanol curative are in a molar ratio of polyamine curative to cyclohexanedimethanol curative in a range from about 20:1 to about 1:1.Type: ApplicationFiled: July 8, 2020Publication date: January 14, 2021Inventors: Rui MA, Lin Fu, Chen-Chih Tsai, Jaeseck Lee, Sarah Brosnan
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Publication number: 20200353586Abstract: A chemical mechanical polishing (CMP) pad includes a polishing portion formed using a vat-based additive manufacturing process. The polishing portion includes a polymer material with a first elastic modulus. In some embodiments the polishing portion is disposed on the backing portion. The backing portion may have a second elastic modulus. The second elastic modulus may be less than the first elastic modulus.Type: ApplicationFiled: May 7, 2020Publication date: November 12, 2020Inventors: Eric S. MOYER, Lin FU, William Michael SPITZIG, Chen-Chih TSAI, Ping HUANG, Justin STEWART, Carlos BARROS
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Patent number: 10562149Abstract: A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio of storage modulus at 25 degrees C. to storage modulus at 80 degrees C. of 50 or more. The thermoplastic polyurethane polishing layer may further optionally have a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1200 MPa or more, and/or a storage modulus at 80 degrees C. of 15 MPa or less.Type: GrantFiled: September 23, 2016Date of Patent: February 18, 2020Assignee: Cabot Microelectronics CorporationInventors: Lin Fu, Rui Ma, Nathan Speer, Chen-Chih Tsai, Kathryn Bergman
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Patent number: 10487135Abstract: A method for preparing low endotoxin collagen is disclosed. The method includes the following steps: providing an animal skin, removing residual adipose tissues and muscle tissues, swelling the animal skin by alkaline solution, peeling the upper and lower surfaces of the animal skin, hydrolyzing the animal skin by a solution including hydrolase, salting out the low endotoxin collagen by salt solutions, and washing the low endotoxin collagen by alcohols.Type: GrantFiled: January 15, 2018Date of Patent: November 26, 2019Assignee: GUANGDONG VICTORY BIOTECH CO., INC.Inventors: Chen-Chih Tsai, Kuan-Yen Tung
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Publication number: 20190055303Abstract: A method for preparing low endotoxin collagen is disclosed. The method includes the following steps: providing an animal skin, removing residual adipose tissues and muscle tissues, swelling the animal skin by alkaline solution, peeling the upper and lower surfaces of the animal skin, hydrolyzing the animal skin by a solution including hydrolase, salting out the low endotoxin collagen by salt solutions, and washing the low endotoxin collagen by alcohols.Type: ApplicationFiled: January 15, 2018Publication date: February 21, 2019Inventors: Chen-Chih Tsai, Kuan-Yen Tung
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Publication number: 20170087688Abstract: A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio of storage modulus at 25 degrees C. to storage modulus at 80 degrees C. of 50 or more. The thermoplastic polyurethane polishing layer may further optionally have a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1200 MPa or more, and/or a storage modulus at 80 degrees C. of 15 MPa or less.Type: ApplicationFiled: September 23, 2016Publication date: March 30, 2017Inventors: Lin FU, Rachel Ma, Nathan Speer, Chen-Chih Tsai, Kathryn Bergman
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Patent number: 9383292Abstract: A fluidic probe comprising a plurality of oriented fibers with individual fibers having nano-pores in the fiber bodies, the oriented fibers being twisted together, wherein the twisted oriented fibers form micro-pores between the individual fibers, is disclosed. The fluidic probe exhibits excellent flexibility, deployability and absorptive capacity. The enhanced absorptive capacity is due to the fluid absorption via capillary action of the nano-pores and fluid transport via the micro-pores. The probes can also be formed so as to be remotely controlled by electromagnetic fields and thus be used in a hands-free fashion. With these probes, the paradigm of a stationary microfluidic platform can be shifted to include flexible structures that can include multiple microfluidic sensors in a single fibrous probe.Type: GrantFiled: September 12, 2012Date of Patent: July 5, 2016Assignee: CLEMSON UNIVERSITYInventors: Konstantin G. Kornev, Chen-Chih Tsai, David Lukas, Petr Mikes
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Patent number: 6302459Abstract: A conveyance arm device for conveying wafers. The conveyance arm device comprises a conducting seat, at least a tweezer, and at least a conducting path. The conducting seat controls and drives the conveying operation of the tweezer. The tweezer comprises a first end and a second end, and a first surface and a second surface between the first and the second ends. The first end of the tweezer is connected to the conducting seat. The conducting film is adhered to the second surface of the tweezer.Type: GrantFiled: August 10, 1999Date of Patent: October 16, 2001Assignee: United Microelectronics Corp.Inventors: Chi-Jui Sung, Chen-Chih Tsai, Yung-Hui Feng, Guan-Jiun Liu
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Patent number: 6183819Abstract: A method for processing a poly defect is described. A substrate is provided, and a first oxide layer is formed on the substrate. A polysilicon layer is formed on the first oxide layer, and a poly defect is formed on the polysilicon layer surface simultaneous with polysilicon layer formation. A second oxide layer is formed conformal to the substrate, a portion of the second oxide layer and the poly defect are removed by polishing until a thin second oxide layer and a thin poly defect layer are formed. Finally, the thin second oxide layer is removed.Type: GrantFiled: February 1, 1999Date of Patent: February 6, 2001Assignee: United Semiconductor Corp.Inventors: Chen-Chih Tsai, Yung-Hui Feng
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Patent number: 5960321Abstract: A method of forming a contact via includes forming a wiring, a first insulator layer, and a spin-on glass layer, respectively, over a semiconductor substrate. Fluorine ions are implanted into the spin-on glass layer. A second insulator layer is formed over the spin-on glass layer. The wiring is exposed by patterning the second insulator layer, the spin-on glass layer, and the first insulator layer, respectively.Type: GrantFiled: June 19, 1997Date of Patent: September 28, 1999Assignee: United Microelectronics Corp.Inventors: Ching-Hsing Hsieh, Chin-Ching Hsu, Chen-Chih Tsai, Jiunn Hsien Lin