Patents by Inventor Chen-Chih Tsai

Chen-Chih Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230405765
    Abstract: The invention provides a composition for preparing a chemical-mechanical polishing pad via photopolymerization and heating, the composition comprising a first component comprising: one or more acrylate-blocked isocyanates, one or more acrylate monomers and at least one photoinitiator. The composition further comprising a second component comprising one or more amine curatives. The invention also provides a method of forming a chemical-mechanical polishing pad comprising preparing a composition comprising: a first component comprising one or more acrylate-blocked isocyanates, one or more acrylate monomers and at least one photoinitiator. The composition further comprising a second component comprising one or more amine curatives. The method further comprising exposing at least a layer of the composition to ultraviolet light, thereby initiating a polymerization reaction and thus forming at least a layer of solidified pad material; and heating the layer.
    Type: Application
    Filed: June 15, 2023
    Publication date: December 21, 2023
    Inventor: Chen-Chih TSAI
  • Patent number: 11845156
    Abstract: A chemical-mechanical polishing pad comprising a thermosetting polyurethane polishing layer includes an isocyanate-terminated urethane prepolymer, a polyamine curative, and a cyclohexanedimethanol curative. The polyamine curative and the cyclohexanedimethanol curative are in a molar ratio of polyamine curative to cyclohexanedimethanol curative in a range from about 20:1 to about 1:1.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: December 19, 2023
    Assignee: CMC MATERIALS, INC.
    Inventors: Rui Ma, Lin Fu, Chen-Chih Tsai, Jaeseok Lee, Sarah Brosnan
  • Patent number: 11845157
    Abstract: A chemical mechanical polishing (CMP) pad includes a polishing portion formed using a vat-based additive manufacturing process. The polishing portion includes a polymer material with a first elastic modulus. In some embodiments the polishing portion is disposed on the backing portion. The backing portion may have a second elastic modulus. The second elastic modulus may be less than the first elastic modulus.
    Type: Grant
    Filed: May 7, 2020
    Date of Patent: December 19, 2023
    Assignee: CMC MATERIALS, INC.
    Inventors: Eric S. Moyer, Lin Fu, William Michael Spitzig, Chen-Chih Tsai, Ping Huang, Justin Stewart, Carlos Barros
  • Patent number: 11807710
    Abstract: The invention provides a UV-curable resin for forming a chemical-mechanical polishing pad comprising: (a) one or more acrylate blocked isocyanates; (b) one or more acrylate monomers; and (c) a photoinitiator. The invention also provides a method of forming a chemical-mechanical polishing pad using the UV-curable resin.
    Type: Grant
    Filed: October 18, 2021
    Date of Patent: November 7, 2023
    Assignee: CMC Materials, Inc.
    Inventors: Chen-Chih Tsai, Eric S. Moyer, Ping Huang
  • Publication number: 20220193860
    Abstract: A subpad for a chemical-mechanical polishing pad, the subpad having porogens with polymeric shells. Methods of fabricating the subpad and polishing pads with a polishing surface layer bonded to the subpad layer are also described.
    Type: Application
    Filed: December 21, 2021
    Publication date: June 23, 2022
    Inventors: Dustin MILLER, Paul Andre LEFEVRE, Aaron PETERSON, Chen-Chih TSAI
  • Publication number: 20220119586
    Abstract: The invention provides a UV-curable resin for forming a chemical-mechanical polishing pad comprising: (a) one or more acrylate blocked isocyanates; (b) one or more acrylate monomers; and (c) a photoinitiator. The invention also provides a method of forming a chemical-mechanical polishing pad using the UV-curable resin.
    Type: Application
    Filed: October 18, 2021
    Publication date: April 21, 2022
    Inventors: Chen-Chih TSAI, Eric S. Moyer, Ping Huang
  • Publication number: 20210008687
    Abstract: A chemical-mechanical polishing pad comprising a thermosetting polyurethane polishing layer includes an isocyanate-terminated urethane prepolymer, a polyamine curative, and a cyclohexanedimethanol curative. The polyamine curative and the cyclohexanedimethanol curative are in a molar ratio of polyamine curative to cyclohexanedimethanol curative in a range from about 20:1 to about 1:1.
    Type: Application
    Filed: July 8, 2020
    Publication date: January 14, 2021
    Inventors: Rui MA, Lin Fu, Chen-Chih Tsai, Jaeseck Lee, Sarah Brosnan
  • Publication number: 20200353586
    Abstract: A chemical mechanical polishing (CMP) pad includes a polishing portion formed using a vat-based additive manufacturing process. The polishing portion includes a polymer material with a first elastic modulus. In some embodiments the polishing portion is disposed on the backing portion. The backing portion may have a second elastic modulus. The second elastic modulus may be less than the first elastic modulus.
    Type: Application
    Filed: May 7, 2020
    Publication date: November 12, 2020
    Inventors: Eric S. MOYER, Lin FU, William Michael SPITZIG, Chen-Chih TSAI, Ping HUANG, Justin STEWART, Carlos BARROS
  • Patent number: 10562149
    Abstract: A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio of storage modulus at 25 degrees C. to storage modulus at 80 degrees C. of 50 or more. The thermoplastic polyurethane polishing layer may further optionally have a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1200 MPa or more, and/or a storage modulus at 80 degrees C. of 15 MPa or less.
    Type: Grant
    Filed: September 23, 2016
    Date of Patent: February 18, 2020
    Assignee: Cabot Microelectronics Corporation
    Inventors: Lin Fu, Rui Ma, Nathan Speer, Chen-Chih Tsai, Kathryn Bergman
  • Patent number: 10487135
    Abstract: A method for preparing low endotoxin collagen is disclosed. The method includes the following steps: providing an animal skin, removing residual adipose tissues and muscle tissues, swelling the animal skin by alkaline solution, peeling the upper and lower surfaces of the animal skin, hydrolyzing the animal skin by a solution including hydrolase, salting out the low endotoxin collagen by salt solutions, and washing the low endotoxin collagen by alcohols.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: November 26, 2019
    Assignee: GUANGDONG VICTORY BIOTECH CO., INC.
    Inventors: Chen-Chih Tsai, Kuan-Yen Tung
  • Publication number: 20190055303
    Abstract: A method for preparing low endotoxin collagen is disclosed. The method includes the following steps: providing an animal skin, removing residual adipose tissues and muscle tissues, swelling the animal skin by alkaline solution, peeling the upper and lower surfaces of the animal skin, hydrolyzing the animal skin by a solution including hydrolase, salting out the low endotoxin collagen by salt solutions, and washing the low endotoxin collagen by alcohols.
    Type: Application
    Filed: January 15, 2018
    Publication date: February 21, 2019
    Inventors: Chen-Chih Tsai, Kuan-Yen Tung
  • Publication number: 20170087688
    Abstract: A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio of storage modulus at 25 degrees C. to storage modulus at 80 degrees C. of 50 or more. The thermoplastic polyurethane polishing layer may further optionally have a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1200 MPa or more, and/or a storage modulus at 80 degrees C. of 15 MPa or less.
    Type: Application
    Filed: September 23, 2016
    Publication date: March 30, 2017
    Inventors: Lin FU, Rachel Ma, Nathan Speer, Chen-Chih Tsai, Kathryn Bergman
  • Patent number: 9383292
    Abstract: A fluidic probe comprising a plurality of oriented fibers with individual fibers having nano-pores in the fiber bodies, the oriented fibers being twisted together, wherein the twisted oriented fibers form micro-pores between the individual fibers, is disclosed. The fluidic probe exhibits excellent flexibility, deployability and absorptive capacity. The enhanced absorptive capacity is due to the fluid absorption via capillary action of the nano-pores and fluid transport via the micro-pores. The probes can also be formed so as to be remotely controlled by electromagnetic fields and thus be used in a hands-free fashion. With these probes, the paradigm of a stationary microfluidic platform can be shifted to include flexible structures that can include multiple microfluidic sensors in a single fibrous probe.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: July 5, 2016
    Assignee: CLEMSON UNIVERSITY
    Inventors: Konstantin G. Kornev, Chen-Chih Tsai, David Lukas, Petr Mikes
  • Patent number: 6302459
    Abstract: A conveyance arm device for conveying wafers. The conveyance arm device comprises a conducting seat, at least a tweezer, and at least a conducting path. The conducting seat controls and drives the conveying operation of the tweezer. The tweezer comprises a first end and a second end, and a first surface and a second surface between the first and the second ends. The first end of the tweezer is connected to the conducting seat. The conducting film is adhered to the second surface of the tweezer.
    Type: Grant
    Filed: August 10, 1999
    Date of Patent: October 16, 2001
    Assignee: United Microelectronics Corp.
    Inventors: Chi-Jui Sung, Chen-Chih Tsai, Yung-Hui Feng, Guan-Jiun Liu
  • Patent number: 6183819
    Abstract: A method for processing a poly defect is described. A substrate is provided, and a first oxide layer is formed on the substrate. A polysilicon layer is formed on the first oxide layer, and a poly defect is formed on the polysilicon layer surface simultaneous with polysilicon layer formation. A second oxide layer is formed conformal to the substrate, a portion of the second oxide layer and the poly defect are removed by polishing until a thin second oxide layer and a thin poly defect layer are formed. Finally, the thin second oxide layer is removed.
    Type: Grant
    Filed: February 1, 1999
    Date of Patent: February 6, 2001
    Assignee: United Semiconductor Corp.
    Inventors: Chen-Chih Tsai, Yung-Hui Feng
  • Patent number: 5960321
    Abstract: A method of forming a contact via includes forming a wiring, a first insulator layer, and a spin-on glass layer, respectively, over a semiconductor substrate. Fluorine ions are implanted into the spin-on glass layer. A second insulator layer is formed over the spin-on glass layer. The wiring is exposed by patterning the second insulator layer, the spin-on glass layer, and the first insulator layer, respectively.
    Type: Grant
    Filed: June 19, 1997
    Date of Patent: September 28, 1999
    Assignee: United Microelectronics Corp.
    Inventors: Ching-Hsing Hsieh, Chin-Ching Hsu, Chen-Chih Tsai, Jiunn Hsien Lin