Abstract: A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.

Abstract: An electrically conductive material includes a plurality of nanowires and a plurality of nanoconnectors. The ratio by weight of the plurality of nanowires to the plurality of nanoconnectors is in a range of from 1:9 to 9:1. Nanoconnectors can be heated by thermal energy or light energy so that the nanoconnectors can be closely interconnected to each other and to nanowires, resulting in significant increase of the electrical conductivity of the electrically conductive material.

Abstract: An electrically conductive material includes a plurality of nanowires and a plurality of nanoconnectors. The ratio by weight of the plurality of nanowires to the plurality of nanoconnectors is in a range of from 1:9 to 9:1. Nanoconnectors can be heated by thermal energy or light energy so that the nanoconnectors can be closely interconnected to each other and to nanowires, resulting in significant increase of the electrical conductivity of the electrically conductive material.