Patents by Inventor CHEN-CHUNG LIAO

CHEN-CHUNG LIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240087961
    Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hung-Ju CHOU, Chih-Chung Chang, Jun-Ming Kuo, Che-Yuan Hsu, Pei-Ling Kao, Chen-Hsuan Liao
  • Patent number: 11923250
    Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.
    Type: Grant
    Filed: July 28, 2022
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hung-Ju Chou, Chih-Chung Chang, Jiun-Ming Kuo, Che-Yuan Hsu, Pei-Ling Gao, Chen-Hsuan Liao
  • Patent number: 8957815
    Abstract: The coaxial cable designed antenna module is installed inside a casing of an electronic device. The coaxial cable designed antenna module contains an antenna coaxial cable, a radiation resonance region, and an antenna base. The antenna base can be a dielectric component inside the casing or an independent dielectric member. The antenna base has at least a side joined to a conductor for positioning the antenna base inside the casing. The antenna coaxial cable has one end connected to the radiation resonance region on the antenna base. The radiation resonance region can be configured into an antenna style such as single-pole, slot, etc. The negative pole region of the antenna coaxial cable keeps the outer jacket so that the underneath braided mesh is not exposed, and has the outer jacket directly connected to a conductor of the electronic device so as to produce RF signal through disrupted current.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: February 17, 2015
    Assignee: Sage Elephant Tech Co., Ltd.
    Inventors: Hung-Hsien Chiu, Chen-Chung Liao
  • Publication number: 20140104116
    Abstract: The coaxial cable designed antenna module is installed inside a casing of an electronic device. The coaxial cable designed antenna module contains an antenna coaxial cable, a radiation resonance region, and an antenna base. The antenna base can be a dielectric component inside the casing or an independent dielectric member. The antenna base has at least a side joined to a conductor for positioning the antenna base inside the casing. The antenna coaxial cable has one end connected to the radiation resonance region on the antenna base. The radiation resonance region can be configured into an antenna style such as single-pole, slot, etc. The negative pole region of the antenna coaxial cable keeps the outer jacket so that the underneath braided mesh is not exposed, and has the outer jacket directly connected to a conductor of the electronic device so as to produce RF signal through disrupted current.
    Type: Application
    Filed: December 20, 2012
    Publication date: April 17, 2014
    Inventors: HUNG-HSIEN CHIU, CHEN-CHUNG LIAO