Abstract: A semiconductor device includes a substrate having a first conductivity type and an epitaxial layer disposed on the substrate. A first trench and a second trench are disposed in the epitaxial layer. A first body region and a second body region both having a second conductivity type are disposed in the epitaxial layer, and located on two sides of the first trench, respectively. A first source region and a second source region both having the first conductivity type are disposed on the first body region and the second body region, respectively. A first electrode is disposed in the first trench. A source contact structure includes a first portion disposed in the first trench and is electrically connected to the first source region and the second source region. A first gate is disposed in the second trench.

Abstract: The present invention provides anti-IL-25 antibodies that are directed against (human) IL-25, nucleic acids that encode such antibodies, compositions, and in particular pharmaceutical compositions that comprise such antibodies; and uses of such antibodies and compositions.

Abstract: A high electron mobility transistor includes a semiconductor channel layer and a semiconductor barrier layer disposed on a substrate in sequence. A source electrode and a drain electrode are disposed on the semiconductor channel layer. A semiconductor cap layer is disposed on the semiconductor barrier layer. A first dielectric layer is disposed over the source electrode, the semiconductor cap layer and the drain electrode. A first via passes through the first dielectric layer and is extended downward onto the semiconductor cap layer. A gate electrode is disposed on the first dielectric layer and in contact with the first via. A first field plate is disposed in the first dielectric layer. A second field plate is disposed on the first dielectric layer and in contact with the first field plate.

Abstract: Provided is a device for spraying an ammoniacal gas in an automatically-adjustable manner based on a flow rate

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, an epitaxial layer, multiple field plate structures, multiple shielding layers, an upper electrode layer, and a lower electrode layer. The epitaxial layer is disposed on the substrate. The field plate structures include a first field plate structure and a second field plate structure respectively disposed in a first unit and a second unit of the semiconductor structure. The shielding layers are disposed between the bottom portions of the field plate structures and the epitaxial layer. The upper electrode layer covers the field plate structures. The upper electrode layer is separated from the epitaxial layer in the first unit and is in direct contact with the epitaxial layer in the second unit. The lower electrode layer is disposed under the substrate and opposite to the epitaxial layer.

Abstract: The present invention encompasses antibodies and fragments thereof that bind to an extracellular domain of B7H3, and uses thereof.

Abstract: The present disclosure relates to antibodies and antibody derivatives that bind to OX40 and methods of using the same. In certain embodiments, the antibody or antibody derivative disclosed herein comprises a single domain antibody that binds to OX40. In certain embodiments, the antibody derivative is a multispecific antibody that binds to OX40 and an additional antigen, e.g., CTLA4.

Abstract: The present disclosure relates to antibodies and antibody derivatives that bind to OX40 and methods of using the same. In certain embodiments, the antibody or antibody derivative disclosed herein comprises a single domain antibody that binds to OX40.

Abstract: A method for producing light aromatic hydrocarbons from C9+ aromatic hydrocarbons includes a step of contacting a C9+ aromatic hydrocarbon with a dealkylation catalyst comprising a KL zeolite, and platinum and a modifying metal supported thereon in the presence of hydrogen, to obtain a light aromatic hydrocarbon. The modifying metal is selected from the group consisting of Group IIA metals and rare earth metals. By using a Pt/KL catalyst comprising a specific modifying metal in the dealkylation reaction of C9+ aromatic hydrocarbons for producing light aromatic hydrocarbons, the method shows the advantages of high conversion rate of feedstock, high yield of light aromatic hydrocarbons, good reaction selectivity.

Abstract: A system for manufacturing thin-film devices is provided, the system comprising: a computing device; robotic arm or conveyor system; holder which is configured to retain a first substrate; dispenser which configured to dispense a solution onto an upper surface of the first substrate; an X-Y press, which includes a base, a vertically disposed member which is attached to the base, a horizontal arm which is moveably attached to the vertically disposed member, a vertical actuator which is configured to urge the horizontal arm up and down and is attached to the vertically disposed member, a horizontal actuator which is attached to the horizontal arm, a block which is attached to the horizontal actuator, wherein the horizontal actuator is configured to urge the block horizontally; and a dryer, wherein the robotic arm or the conveyor system, the dispenser, the X-Y press and the dryer are under control of the computing device.

Abstract: Disclosed is a lamp having a dynamic starry sky effect. The lamp includes a lamp frame, and a first light source, optical integrating lenses, a roller beam splitter, a starry sky laser assembly and a starry sky mirror disc, where the optical integrating lenses are configured to focus light emitted by the first light source into strip-shaped light spots and transmit the strip-shaped light spots formed through focusing to the roller beam splitter at a front part in a shining direction; the roller beam splitter is configured to form the light into nonlinear dynamic strip-shaped light spots during rotation; the starry sky laser assembly includes a second light source; the starry sky mirror disc is configured to reflect light generated by the second light source; and the light dots and the strip-shaped light spots are superposed and combined together to form the dynamic starry sky effect.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, an epitaxial layer, a well region, an insulating structure, an upper electrode layer, and a lower electrode layer. The substrate has the first conductivity type. The epitaxial layer is disposed on the substrate and has the first conductivity type. There is a protruding structure on the upper portion of the epitaxial layer. The well region is disposed in the epitaxial layer. The well region has the second conductivity type. The insulating structure is disposed on the sidewall of the protruding structure. The upper electrode layer surrounds the protruding structure and is electrically connected to the epitaxial layer and the well region. The lower electrode layer is disposed under the substrate and opposite to the epitaxial layer.

Abstract: This present disclosure provides anti-TIGIT polypeptides or fragments thereof. Further provided are methods of using the antibody or fragments thereof to treat and diagnose diseases such as cancer, infection or immune disorders.

Abstract: This present invention provides anti-PD-1 polypeptides or fragments thereof. Further provided are methods of using the antibody or fragments thereof to treat and diagnose diseases such as cancer, infection or immune disorders.

Abstract: A semiconductor device includes a substrate having a first conductivity type, an epitaxial layer on the substrate and having the first conductivity type, a trench structure extending from the top surface of the epitaxial layer into the epitaxial layer, and a well region extending into the epitaxial layer and has the second conductivity type. The first sidewall of the well region is in contact with the trench structure. The trench structure includes a conductive portion and an insulating layer that covers the sidewalls and the bottom portion of the conductive portion. A drift region that has the first conductivity type is adjacent to and under the well region. The drift region is in contact with the second sidewall and the bottom surface of the well region. The semiconductor device further includes a gate structure on the top surface of the epitaxial layer and over the well region.

Abstract: A solar cell is provided that comprises: a glass substrate or a plastic polymeric substrate; a first electrode disposed on the glass substrate or the plastic polymeric substrate, an electron transport layer disposed on the first electrode; a perovskite layer disposed on the electron transport layer; an organic-inorganic hole transport bilayer comprising an organic layer which is disposed on the perovskite layer and an inorganic layer which is disposed on the organic layer; and a second electrode disposed on the inorganic layer.

Abstract: Disclosed is a lamp having a dynamic starry sky effect. The lamp includes a lamp frame, and a first light source, optical integrating lenses, a roller beam splitter, a starry sky laser assembly and a starry sky mirror disc, where the optical integrating lenses are configured to focus light emitted by the first light source into strip-shaped light spots and transmit the strip-shaped light spots formed through focusing to the roller beam splitter at a front part in a shining direction; the roller beam splitter is configured to form the light into nonlinear dynamic strip-shaped light spots during rotation; the starry sky laser assembly includes a second light source; the starry sky mirror disc is configured to reflect light generated by the second light source; and the light dots and the strip-shaped light spots are superposed and combined together to form the dynamic starry sky effect.

Abstract: An emulated card selection method is implemented on a mobile device having a near field communication (NEC) NFC function. A first emulated card and a second emulated card are configured on the mobile device, When detecting an NFC radio frequency field, the mobile device detects whether there is fingerprint input. The mobile device selects the first emulated card if there is the fingerprint input. The mobile device selects the second emulated card if there is no fingerprint input. The mobile device performs NEC interaction with the NFC card reader based on the selected first emulated card or second emulated card. The mobile device can automatically select an emulated card in different emulated cards based on a card swiping status when a user uses an NEC emulated card.

Abstract: A wrinkle detection method includes: obtaining an original image, where the original image includes a face; adjusting a size of an ROI region on the original image to obtain at least two ROI images of different sizes, where the ROI region is a region in which a wrinkle on the face is located. A terminal device processes all the at least two ROI images of different sizes to obtain at least two binary images, where a white region in each binary image is a region in which a wrinkle is suspected to appear. The terminal device fuses the at least two binary images to obtain a final image, where a white region on the final image is recognized as a wrinkle.

Abstract: A wrinkle detection method includes: rotating a region, in a face image, in which a wrinkle needs to be detected, to obtain a plurality of to-be-detected images; determining wrinkle points from all pixel points based on grayscale values of the pixel points in each of the to-be-detected images with different angles; determining at least one wrinkle line based on the wrinkle points; and then displaying, by the electronic device, the wrinkle line in the region in which the wrinkle needs to be detected, where each wrinkle line indicates one wrinkle in each of the to-be-detected images.