Abstract: A method of forming a semiconductor structure includes: a substrate is provided, the substrate at least comprising a conducting layer; a bottom supporting layer and a stacking structure being formed on a top surface of the substrate, the stacking structure including a sacrificial layer and a supporting portion that are sequentially stacked and formed; the stacking structure and the bottom supporting layer are partially etched to expose the conducting layer to form a through hole; the supporting portion of a partial width exposed from a sidewall of the through hole is laterally etched to form an air gap; a protective layer filling the air gap is formed; a lower electrode electrically connected with the conducting layer is formed on the sidewall of the through hole and a sidewall of the protective layer; the sacrificial layer is removed.

Abstract: Provided is a method of high-density pattern forming, which includes: providing a substrate; forming a hard mask layer on the substrate; forming a sacrificial layer on the hard mask layer; forming photoresists arranged at intervals on the sacrificial layer; etching the sacrificial layer to enable the sacrificial layer to form a mandrel corresponding to the photoresist one by one, wherein a cross-sectional size of the mandrel gradually decreases from an end of the mandrel away from the hard mask layer to an end close to the hard mask layer; forming an isolation layer on the mandrel; removing the isolation layer on the top of the mandrel, the isolation layer covering the hard mask layer, and the mandrel to form an isolation sidewall pattern; and transferring the isolation sidewall pattern to the hard mask layer.

Abstract: Provided is a method of high-density pattern forming, which includes: providing a substrate; forming a hard mask layer on the substrate; forming a sacrificial layer on the hard mask layer; forming photoresists arranged at intervals on the sacrificial layer; etching the sacrificial layer to enable the sacrificial layer to form a mandrel corresponding to the photoresist one by one, wherein a cross-sectional size of the mandrel gradually decreases from an end of the mandrel away from the hard mask layer to an end close to the hard mask layer; forming an isolation layer on the mandrel; removing the isolation layer on the top of the mandrel, the isolation layer covering the hard mask layer, and the mandrel to form an isolation sidewall pattern; and transferring the isolation sidewall pattern to the hard mask layer.

Abstract: A method of forming a semiconductor structure includes: a substrate is provided, the substrate at least comprising a conducting layer; a bottom supporting layer and a stacking structure being formed on a top surface of the substrate, the stacking structure including a sacrificial layer and a supporting portion that are sequentially stacked and formed; the stacking structure and the bottom supporting layer are partially etched to expose the conducting layer to form a through hole; the supporting portion of a partial width exposed from a sidewall of the through hole is laterally etched to form an air gap; a protective layer filling the air gap is formed; a lower electrode electrically connected with the conducting layer is formed on the sidewall of the through hole and a sidewall of the protective layer; the sacrificial layer is removed.