Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.

Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.

Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.

Abstract: In an embodiment, a system includes: a chamber; and a magnetic assembly contained within the chamber. The magnetic assembly comprises: an inner magnetic portion comprising first magnets; and an outer magnetic portion comprising second magnets. At least two adjacent magnets, of either the first magnets or the second magnets, have different vertical displacements, and the magnetic assembly is configured to rotate around an axis to generate an electromagnetic field that moves ions toward a target region within the chamber.

Abstract: A method for modifying magnetic field distribution in a deposition chamber is disclosed. The method includes the operations of providing a target magnetic field distribution, removing a first plurality of fixed magnets in the deposition chamber, replacing each of the first plurality of fixed magnets with respective ones of a second plurality of magnets, performing at least one of adjusting a position of at least one of the second plurality of the magnets, and adjusting a size of at least one of the second plurality of magnets, adjusting a magnetic flux of at least one of the second plurality of magnets, measuring the magnetic field distribution in the deposition chamber, and comparing the measured magnetic field distribution in the deposition chamber with the target magnetic field distribution.

Abstract: A method for modifying magnetic field distribution in a deposition chamber is disclosed. The method includes the steps of providing a target magnetic field distribution, removing a first plurality of fixed magnets in the deposition chamber, replacing each of the first plurality of fixed magnets with respective ones of a second plurality of magnets, performing at least one of adjusting a position of at least one of the second plurality of the magnets, and adjusting a size of at least one of the second plurality of magnets, adjusting a magnetic flux of at least one of the second plurality of magnets, measuring the magnetic field distribution in the deposition chamber, and comparing the measured magnetic field distribution in the deposition chamber with the target magnetic field distribution.

Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.

Abstract: A method for modifying magnetic field distribution in a deposition chamber is disclosed. The method includes the steps of providing a target magnetic field distribution, removing a first plurality of fixed magnets in the deposition chamber, replacing each of the first plurality of fixed magnets with respective ones of a second plurality of magnets, performing at least one of adjusting a position of at least one of the second plurality of the magnets, and adjusting a size of at least one of the second plurality of magnets, adjusting a magnetic flux of at least one of the second plurality of magnets, measuring the magnetic field distribution in the deposition chamber, and comparing the measured magnetic field distribution in the deposition chamber with the target magnetic field distribution.

Abstract: In an embodiment, a system includes: a chamber; and a magnetic assembly contained within the chamber. The magnetic assembly comprises: an inner magnetic portion comprising first magnets; and an outer magnetic portion comprising second magnets. At least two adjacent magnets, of either the first magnets or the second magnets, have different vertical displacements, and the magnetic assembly is configured to rotate around an axis to generate an electromagnetic field that moves ions toward a target region within the chamber.

Abstract: Systems and methods are provided for material processing. An example apparatus includes a process-kit component containing a first groove and a second groove. The first groove and the second groove are disposed to form a pattern on a surface of the process-kit component. The process-kit component is configured to be placed into a chamber to reduce material deposition on one or more parts of the chamber during material processing.

Abstract: Systems and methods are provided for material processing. An example apparatus includes a process-kit component containing a first groove and a second groove. The first groove and the second groove are disposed to form a pattern on a surface of the process-kit component. The process-kit component is configured to be placed into a chamber to reduce material deposition on one or more parts of the chamber during material processing.

Abstract: The invention provides an anti-hepatitis C composition including: an effective amount of limonoid compound, wherein the structure of the limonoid compound is shown as Structure (I): where R1 comprises H or OAc and R2 comprises H or COCH(CH3)2; and a pharmaceutically acceptable carrier or salt, and the anti-hepatitis C composition is used for inhibiting hepatitis C virus or treating hepatitis C. The invention also provides a method for treating hepatitis C and a method for preparing a drug for inhibiting hepatitis C viruses or treating hepatitis C.

Abstract: The invention provides an anti-hepatitis C composition including: an effective amount of limonoid compound, wherein the structure of the limonoid compound is shown as Structure (I): where R1 comprises H or OAc and R2 comprises H or COCH(CH3)2; and a pharmaceutically acceptable carrier or salt, and the anti-hepatitis C composition is used for inhibiting hepatitis C virus or treating hepatitis C. The invention also provides a method for treating hepatitis C and a method for preparing a drug for inhibiting hepatitis C viruses or treating hepatitis C.

Abstract: An alignment mark shielding ring for use in a physical vapor deposition chamber and a method for using the ring to avoid arcing problems on the wafer. The alignment mark shielding ring can be constructed of a ring that has a generally L-shaped cross-section, at least one hood portion to function as the shield for the alignment mark, at least one alignment pin for engaging at least one alignment sleeve mounted in a lower chamber shield for holding the alignment mark shielding ring in place. The alignment sleeve is constructed in two halves, each having an aperture therethrough. The aperture in the top half is larger than the aperture in the bottom half such that even when the apertures are coated with a metal layer deposited in the PVD process, the alignment pin does not electrically short to the lower chamber shield and thus, any possibility of arcing is avoided.

Abstract: An alignment mark shielding ring for use in a physical vapor deposition chamber and a method for using the ring to avoid arcing problems on the wafer. The alignment mark shielding ring can be constructed of a ring that has a generally L-shaped cross-section, at least one hood portion to function as the shield for the alignment mark, at least one alignment pin for engaging at least one alignment sleeve mounted in a lower chamber shield for holding the alignment mark shielding ring in place. The alignment sleeve is constructed in two halves, each having an aperture therethrough. The aperture in the top half is larger than the aperture in the bottom half such that even when the apertures are coated with a metal layer deposited in the PVD process, the alignment pin does not electrically short to the lower chamber shield and thus, any possibility of arcing is avoided.

Abstract: A new configuration of a basic concatenatable integrated modular multiple chamber vacuum processing system for wafer manufacturing vacuum processes is disclosed. The basic system includes at least one multiple ported transfer vacuum chamber, an R-&thgr; transfer means contained within each chamber, a multiplicity of ports adaptable for appending a variety of vacuum process chambers as well as forming entrance/exit ports with at least one dual port pass through chamber attached to one entrance/exit port. Each pass through chamber contains a wafer alignment and/or orientation means for aligning or orienting the wafer as necessary in any of the appended process chambers. The configuration minimizes alignment or orientation errors due to inherent instability of the concatenated transfer means operations.

Abstract: A new configuration of a basic concatenatable integrated modular multiple chamber vacuum processing system for wafer manufacturing vacuum processes is disclosed. The basic system includes at least one multiple ported transfer vacuum chamber, an R-&thgr; transfer means contained within each chamber, a multiplicity of ports adaptable for appending a variety of vacuum process chambers as well as forming entrance/exit ports with at least one dual port pass through chamber attached to one entrance/exit port. Each pass through chamber contains a wafer alignment and/or orientation means for aligning or orienting the wafer as necessary in any of the appended process chambers. The configuration minimizes alignment or orientation errors due to inherent instability of the concatenated transfer means operations.

Abstract: A mark shielding ring for use in a physical vapor deposition chamber and a method for using such ring are disclosed. The mark shielding ring may be suitably used for shielding alignment marks or any other marks provided on the top surface of a wafer along a peripheral region. The novel mark shielding ring includes an alignment means for mechanically joining a shielding ring to a wafer pedestal on which the ring is positioned. Any up-and-down motion of the wafer pedestal therefore does not change the alignment between the shielding ring and the pedestal and therefore the function of the shielding ring for protecting an alignment mark can be insured.