Abstract: A grip structure of water sprayer comprises a sprayer body, a grip body is extended downward from one end of the sprayer body, a front surface of the grip body is covered with a front grip fitting portion, a fixing structure is disposed on a back surface of the grip body, a back grip fitting portion is fitted on the back surface of the grip body. The back grip fitting portion has a fitting structure to be fitted and engaged with the fixing structure, so that the back grip fitting portion is fitted on the grip body. Accordingly, the back grip fitting portion of the present invention can be dismounted and replaced at will which is convenient for maintenance and usage.

Abstract: Touch panel having electrostatic protection is provided. The touch panel includes a substrate, a plurality of sensing electrodes, a plurality of conductive wires and an electrostatic protection line. The substrate has a touch sensitive area and a periphery area surrounding the touch sensitive area. The inner part of the periphery area is a first layout area. The outer part of the periphery area is a second layout area. The sensing electrodes are formed in the touch sensitive area. The conductive wires are disposed in the first layout area. The electrostatic protection line is disposed in the second layout area and adjacent to the conductive wires. The width of the electrostatic protection line is greater than that of the conductive wires. The distance separating the outside of the electrostatic protection line from the border of the substrate is smaller than 48.12 mm and greater than or equal to 0.3 mm.

Abstract: A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.

Abstract: Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate.

Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

Abstract: A touch panel, having a peripheral region, includes a first substrate, a plurality of first conductive series, a plurality of first outer traces, and an outer device. The first conductive series are disposed on the first substrate and extend along a first direction. The first outer traces are disposed in the peripheral region. Two ends of each of the first outer traces are respectively connected to two ends of the corresponding first conductive series. The first outer traces connected to the each of the first conductive series extend to a connection region within the peripheral region and include discontinuous sections within the connection region. The outer device is disposed in the peripheral region and is electrically connected to the first outer traces. Each of the first outer traces, each corresponding first conductive series, and the outer device in the connection region constitute a closed conductive path on the first substrate.

Abstract: A touch panel, having a peripheral region, includes a first substrate, a touch-sensing structure, first outer traces, a first ground wire and an outer device. The first outer trace is electrically connected to the touch-sensing structure. The first outer traces extend to a connection region in the peripheral region. The first ground wire extends to the connection region, and the first ground wire has at least one discontinuous section in the connection region. The outer device is electrically connected to the first ground wire and the first outer traces in the connection region. The outer device electrically connects two ends of the discontinuous section of the first ground wire in the connection region, and the two ends of the discontinuous section of the first ground wire are electrically connected via the outer device.

Abstract: Systems and methods are provided for handling database deadlocks induced by database-centric applications (DCAs). SQL statements and transactions associated with the DCAs are analyzed and parsed to generate Petri net models. A supervisory modeler generates augmented Petri net models based on the Petri net models, which are used in generating supervisory control. The supervisory control is used in handling database deadlocks.

Abstract: A lead structure disposed on a substrate is provided. The substrate includes a display area disposed with a device and a peripheral area disposed with a lead structure including first pads, a second pad, first traces and a second trace. The first traces are connected to the device. Each first trace has a first linear portion and a first bonding portion connected together. Each first trace is electrically connected to one of the first pads through the first bonding portion. The second trace has a second linear portion and a second bonding portion connected together. The second trace is electrically connected to the second pad through the second bonding portion. A width of the first linear portion is smaller than a width of the first bonding portion, and a width of the second linear portion is smaller than a width of the second bonding portion.

Abstract: A pedestrian detection system and method includes: dividing an image to a plurality of granules, and counting magnitude difference value of each granule in diagonal orientation to obtain features of HOGG. And the HOGG and the HOG captured can work together to improve the detection rate and reduce the false alarm rate, which is the ultimate goal of the vision based pedestrian detection.

Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.

Abstract: A method for fabricating a vertical light-emitting diode (VLED) structure includes the steps of providing a carrier substrate, and forming a semiconductor structure on the carrier substrate having a p-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-type confinement layer configured to emit electromagnetic radiation, and an n-type confinement layer in electrical contact with the multiple quantum well (MQW) layer. The method also includes the steps of removing the carrier substrate using a laser pulse to expose an inverted surface of the n-type confinement layer, and forming a metal contact on the surface of the n-type confinement layer.

Abstract: A method for fabricating a light emitting diode die includes the steps of providing a carrier substrate and forming an epitaxial structure on the carrier substrate including a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer. The method also includes the steps of forming a plurality of trenches through the epitaxial structure, forming a reflector layer on the second type semiconductor layer, forming a seed layer on the reflector layer and in the trenches, and forming a substrate on the seed layer having an area configured to protect the epitaxial structure.

Abstract: A data consistency management system may include a memory storing machine readable instructions to receive a query, and determine a suitability of the query for processing by a NoSQL data store, or a RDBMS. The memory may further include machine readable instructions to rank data tables based on a combination of read queries and query patterns suitable for the NoSQL data store. Based on the ranking, the memory may further include machine readable instructions to determine data tables that are to be managed by the NoSQL data store, or by the RDBMS, determine whether the query is for a data table managed by the NoSQL data store, and based on a determination that the query is for a data table managed by the NoSQL data store, translate the query to NoSQL API calls for using the NoSQL data store to respond to the query.

Abstract: At least one quasi-identifier attribute of a plurality of ranked attributes is selected for use in anonymizing a database. Each of the ranked attributes is ranked according to that attribute's effect on a database-centric application (DCA) being tested. In an embodiment, the selected quasi-identifier attribute(s) has the least effect on the DCA. The database is anonymized based on the selected quasi-identifier attribute(s) to provide a partially-anonymized database, which may then be provided to a testing entity for use in testing the DCA. In an embodiment, during execution of the DCA, instances of database queries are captured and analyzed to identify a plurality of attributes from the database and, for each such attribute identified, the effect of the attribute on the DCA is quantified. In this manner, databases can be selectively anonymized in order to balance the requirements of data privacy against the utility of the data for testing purposes.

Abstract: A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer and a second-type semiconductor layer. The light emitting diode (LED) die also includes a peripheral electrode on the first-type semiconductor layer located proximate to an outer periphery of the first-type semiconductor layer configured to spread current across the first-type semiconductor layer. A method for fabricating the light emitting diode (LED) die includes the step of forming an electrode on the outer periphery of the first-type semiconductor layer at least partially enclosing and spaced from the multiple quantum well (MQW) layer configured to spread current across the first-type semiconductor layer.

Abstract: A method for fabricating a light emitting diode includes the steps of providing a thermal conductive substrate having an electrical isolation layer, forming an anode via and a cathode via side by side on a first side of the substrate part way through the substrate, forming an anode through interconnect in the anode via and a cathode through interconnect in the cathode via, thinning the substrate from a second side of the substrate to the anode through interconnect and the cathode through interconnect, and mounting a LED chip to the first side in electrical communication with the cathode through interconnect and the anode through interconnect.

Abstract: A structure for a metal-oxide-semiconductor field-effect transistor (MOSFET) sensor is provided. The structure includes a MOSFET, a sensing membrane, and a reference electrode. The reference electrode and the sensing membrane are formed on the first surface of the MOSFET and are arranged in such a way that the reference electrode and the sensing membrane are uniformly and electrically coupled to each other. Thus, the electric field between the sensing membrane and the reference electrode is uniformly distributed therebetween to stabilize the working signal of the MOSFET sensor.

Abstract: Methods for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.

Abstract: Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.