Patents by Inventor Chen Han
Chen Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12292919Abstract: A data classification method, for classifying unlabeled images into an inlier data set or an outlier data set, include following steps. The unlabeled images are obtained. An assigned inlier image is selected among the unlabeled images. A similarity matrix is computed and the similarity matrix includes first similarity scores of the unlabeled images relative to the assigned inlier image. Each of the unlabeled images is classified into an inlier data set or an outlier data set according to the similarity matrix, so as to generate inlier-outlier predictions of the unlabeled images.Type: GrantFiled: November 7, 2023Date of Patent: May 6, 2025Assignee: HTC CorporationInventors: Chen-Han Tsai, Yu-Shao Peng
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Patent number: 12290964Abstract: A 3D-configured production structure of rubber products based on an intelligent manufacturing unit and a production method thereof. The structure includes a stereoscopic production warehouse used to store a mobile intelligent manufacturing unit and an ex-warehouse delivery system used to deliver the mobile intelligent manufacturing unit. The mobile intelligent manufacturing unit includes a unit functional assembly, a molding vulcanization apparatus, a blank feeder, a material-delivering apparatus, a product-collecting apparatus and a reclaimer. The molding vulcanization apparatus includes a upper heat plate, a upper mold, a lower mold, a lower heat plate and a support post. The upper mold and the lower mold are arranged on the inner sides of the upper heat plate and the lower heat plate, respectively. The upper heat plate is fixed on one end of the support post, and the lower heat plate is arranged through the support post.Type: GrantFiled: August 26, 2022Date of Patent: May 6, 2025Assignee: CHENGDU HOLY AVIATION SCIENCE TECHNOLOGY CO., LTD.Inventors: Jie Zhong, Aimin Zeng, Xiaofeng Zhang, Liang Wang, Xuegang Wu, Qun Zhou, Zanping Zhang, Chen Han, Yu Liu, Zhipeng Li, Gaosheng Guo, Rongqian Mo, Yue Fei
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Patent number: 12260517Abstract: Disclosed is an optical system using image restoration, including a light source, a pinhole, a testing platform, an image sensor and an image processing device. The pinhole is disposed on a light transmission path of the light source. The testing platform is disposed on the light transmission path of the light source and the pinhole is located between the light source and the testing platform. The testing platform is used to place a testing sample. The image sensor is disposed below the testing platform, and used to sense the testing sample so as to output an optical diffraction signal. The image processing device is electrically connected to the image sensor and used to perform signal processing and optical signal recognition on the optical diffraction signal of the testing sample so as to obtain a clear image of the testing sample.Type: GrantFiled: December 7, 2021Date of Patent: March 25, 2025Assignee: NATIONAL CENTRAL UNIVERSITYInventors: Chen Han Huang, Chun San Tai, Ting Yi Lin
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Publication number: 20250098187Abstract: A memory cell structure includes a transistor structure and a capacitor structure, where the capacitor structure includes a hydrogen absorption layer. The hydrogen absorption layer absorbs hydrogen, which prevents or reduces the likelihood of the hydrogen diffusing into an underlying metal-oxide channel of the transistor structure. In this way, the hydrogen absorption layer minimizes and/or reduces the likelihood of hydrogen contamination in the metal-oxide channel, which may enable a low current leakage to be achieved for the memory cell structure and reduces the likelihood of data corruption and/or failure of the memory cell structure, among other examples.Type: ApplicationFiled: September 18, 2023Publication date: March 20, 2025Inventors: Yu-Chien CHIU, Chen-Han CHOU, Ya-Yun CHENG, Ya-Chun CHANG, Wen-Ling LU, Yu-Kai CHANG, Pei-Chun LIAO, Chung-Wei WU
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Publication number: 20250077552Abstract: A data classification method includes following steps. Text samples are obtained from a dataset. The text samples are converted into text embeddings in a semantic space. An outlier-inlier ranking of the text samples is generated based on an outlier detection algorithm according to distances between the text embeddings in the semantic space. Partial samples are selected from the text samples according to the outlier-inlier ranking. A manual input command is received to assign manual-input labels on the partial samples. A prompt message is generated according to the partial samples with the manual-input labels and unlabeled samples of the text samples. The prompt message is provided to a generative pre-trained transformer model for generating inlier-outlier prediction labels about the unlabeled samples.Type: ApplicationFiled: August 29, 2024Publication date: March 6, 2025Inventors: Chen-Han TSAI, Yu-Shao PENG
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Patent number: 12211789Abstract: A method includes following steps. First transistors are formed over a substrate. An interconnect structure is formed over the plurality of first transistors. A dielectric layer is formed over the interconnect structure. 2D semiconductor seeds are formed over the dielectric layer. The 2D semiconductor seeds are annealed. An epitaxy process is performed to laterally grow a plurality of 2D semiconductor films respectively from the plurality of 2D semiconductor seeds. Second transistors are formed on the plurality of 2D semiconductor films.Type: GrantFiled: July 31, 2023Date of Patent: January 28, 2025Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Chenming Hu, Shu-Jui Chang, Chen-Han Chou, Yen-Teng Ho, Chia-Hsing Wu, Kai-Yu Peng, Cheng-Hung Shen
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Publication number: 20250010287Abstract: An integrated chip having an integrated function capable of providing cell image and biochemical detection is provided and includes a sequentially stacked and sealed laminate set. The laminate set includes an upper laminate, a middle laminate and a lower laminate. The upper laminate has one or more holes for sample injection and sample or air discharging of. The middle laminate includes at least two hollow structures that define an imaging chamber and a biochemical detection area. The lower laminate includes at least one filtering element and at least one electrode sensing element disposed in the biochemical detection. The filtering element is for blocking suspended particles, and the electrode sensing element has electrode terminals for connecting to instruments or equipment to perform the measurements and analysis of electrochemistry and impedance.Type: ApplicationFiled: September 23, 2024Publication date: January 9, 2025Applicant: NATIONAL CENTRAL UNIVERSITYInventors: CHEN HAN HUANG, CHUN SAN TAI, TING YI LIN
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Publication number: 20240395698Abstract: A method includes following steps. A dielectric layer is formed over a substrate. A transition metal-containing layer is deposited on the dielectric layer. The transition metal-containing layer is patterned into a plurality of transition metal-containing pieces. The transition metal-containing pieces are sulfurized or selenized to form a plurality of semiconductor seeds. Semiconductor films are grown from semiconductor seeds. Transistors are formed on the semiconductor films.Type: ApplicationFiled: July 30, 2024Publication date: November 28, 2024Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Chenming HU, Shu-Jui CHANG, Chen-Han CHOU, Yen-Teng HO, Chia-Hsing WU, Kai-Yu PENG, Cheng-Hung SHEN
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Patent number: 12154828Abstract: A semiconductor device includes a substrate, a 2-D material layer, source/drain contacts, and a gate electrode. The 2-D material layer is over the substrate, the 2-D material layer includes source/drain regions and a channel region between the source/drain regions, in which the 2-D material layer is made of a transition metal dichalcogenide (TMD). The source/drain contacts are in contact with source/drain regions of the 2-D material layer, in which a binding energy of transition metal atoms at the channel region of the 2-D material layer is different from a binding energy of the transition metal atoms at the source/drain regions of the 2-D material layer. The gate electrode is over the substrate.Type: GrantFiled: January 13, 2022Date of Patent: November 26, 2024Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Chiung-Yuan Lin, Tsung-Fu Yang, Weicheng Chu, Ching Liang Chang, Chen Han Chou, Chia-Ho Yang, Tsung-Kai Lin, Tsung-Han Lin, Chih-Hung Chung, Chenming Hu
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Publication number: 20240387358Abstract: A method for forming an interconnect structure is provided. The method includes the following operations. A contact is formed over a substrate. An interlayer dielectric (ILD) layer is formed over the contact and the substrate. An opening is formed in the ILD layer thereby exposing a portion of the contact. A densified dielectric layer is formed at an exposed surface of the ILD layer by the opening and an oxide layer over the portion of the contact by irradiating a microwave on the exposed surface of the ILD layer.Type: ApplicationFiled: July 26, 2024Publication date: November 21, 2024Inventors: KHADERBAD MRUNAL ABHIJITH, YU-YUN PENG, FU-TING YEN, CHEN-HAN WANG, TSU-HSIU PERNG, KENG-CHU LIN
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Patent number: 12139698Abstract: An Axial Dispersion Bioreactor (ADBR) is designed for the photoautotrophic, mixotrophic or heterotrophic growth and production of microalgae and other microorganisms (bacteria, fungi, etc.) as well as cell cultures of plants, animals, insects and others. The ADBR is equipped with a plate having a plurality of holes that moves longitudinally or axially within the bioreactor to effect superior hydrodynamic and mixing patterns. The ADBR has the advantages of providing a low-shear culture environment, superior liquid mixing, and efficient gas mass transfer.Type: GrantFiled: December 21, 2018Date of Patent: November 12, 2024Assignee: ARIZONA BOARD OF REGENTS ON BEHALF OF THE UNIVERSITY OF ARIZONAInventors: Joel L. Cuello, Yaser Mehdipour, Andres P. Mayol, Shiwei He, Chen-Han Shih, Lawrence Victor Vitug
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Publication number: 20240363722Abstract: The present disclosure describes a method of forming an intermediate spacer structure between a gate structure and a source/drain (S/D) contact structure and removing a top portion of the intermediate spacer structure to form a recess. The intermediate spacer structure includes a first spacer layer, a second spacer layer, and a sacrificial spacer layer between the first spacer layer and the second spacer layer. The method further includes removing the sacrificial spacer layer to form an air gap between the first spacer layer and the second spacer layer and spinning a dielectric layer on the air gap, the first spacer layer, and the second spacer layer to fill in the recess and seal the air gap. The dielectric layer includes raw materials for a spin-on dielectric material.Type: ApplicationFiled: July 10, 2024Publication date: October 31, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Ting CHEN, Tsai-Jung Ho, Tsung-Han Ko, Tetsuji Ueno, Yahru Cheng, Chen-Han Wang, Keng-Chu Lin, Shuen-Shin Liang, Tsu-Hsiu Perng
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Publication number: 20240346848Abstract: A method for determining an expression model, an electronic device and a non-transient computer readable storage medium are provided. The method includes: acquiring a facial image and eyeball feature information of a user; determining a corresponding expression classification according to the facial image; determining a corresponding expression model to be adjusted based on the expression classification; adjusting corresponding parameters of the expression model to be adjusted by utilizing the facial image and the eyeball feature information to obtain a target expression model.Type: ApplicationFiled: October 17, 2022Publication date: October 17, 2024Inventor: Chen HAN
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Patent number: 12119404Abstract: Methods for manufacturing a semiconductor structure are provided. The method includes alternately stacking first semiconductor material layers and second semiconductor layers over a substrate and patterning the first semiconductor material layers and the second semiconductor layers to form a first fin structure and a second fin structure. The method also includes forming an insulating layer around the first fin structure and the second fin structure and forming a dielectric fin structure over the insulating layer and spaced apart from the first fin structure and the second fin structure. The method also includes forming a first source/drain structure attached to the first fin structure and forming a semiconductor layer covering the first source/drain structure. The method also includes oxidizing the semiconductor layer to form an oxide layer and forming a second source/drain structure attached to the second fin structure after the oxide layer is formed.Type: GrantFiled: June 29, 2023Date of Patent: October 15, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chen-Han Wang, Pei-Hsun Wang, Chun-Hsiung Lin, Chih-Hao Wang
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Publication number: 20240334620Abstract: A display device includes a back board, a display assembly, and a positioning element. The back board includes a bottom plate, a first side plate, and a second side plate. The bottom plate, the first side plate, and the second side plate jointly define an accommodating space, and an opening is between the first side plate and the second side plate. The display assembly is located in the accommodating space. The positioning element is fixed on the back board and includes a filling block, a first sidewall, and a second sidewall. The filling block is engaged with the opening. The first sidewall is connected to the filling block and faces toward an inner side surface of the first side plate. The second sidewall is connected to the filling block and faces toward an inner side surface of the second side plate.Type: ApplicationFiled: August 22, 2023Publication date: October 3, 2024Inventors: Chen-Han YU, Chih Kuei WANG, Chih Chien HUNG
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Patent number: 12094952Abstract: The present disclosure describes a method of forming an intermediate spacer structure between a gate structure and a source/drain (S/D) contact structure and removing a top portion of the intermediate spacer structure to form a recess. The intermediate spacer structure includes a first spacer layer, a second spacer layer, and a sacrificial spacer layer between the first spacer layer and the second spacer layer. The method further includes removing the sacrificial spacer layer to form an air gap between the first spacer layer and the second spacer layer and spinning a dielectric layer on the air gap, the first spacer layer, and the second spacer layer to fill in the recess and seal the air gap. The dielectric layer includes raw materials for a spin-on dielectric material.Type: GrantFiled: April 10, 2023Date of Patent: September 17, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Ting Chen, Chen-Han Wang, Keng-Chu Lin, Shuen-Shin Liang, Tsu-Hsiu Perng, Tsai-Jung Ho, Tsung-Han Ko, Tetsuji Ueno, Yahru Cheng
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Publication number: 20240264423Abstract: A high throughput lensless imaging method and system thereof are provided. The system mainly includes a light source, an optical panel, and an optical image sensing module. The optical panel corresponds to the light source and includes an optical pinhole that corresponds to the light source such that the light generated by the light source passes through the optical pinhole. The sensing unit is electrically connected to a computing unit that is used to compute after receiving the optical diffraction signal transmitted by the sensing unit, so as to perform the computation and reconstruction of an image.Type: ApplicationFiled: April 18, 2024Publication date: August 8, 2024Applicant: NATIONAL CENTRAL UNIVERSITYInventors: CHEN HAN HUANG, CHUN SAN TAI, TING YI LIN
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Publication number: 20240227338Abstract: A fully-automatic production line and an automatic production method for rubber sealing rings. The fully-automatic production line includes a ring forming area, a molded vulcanization area, a flash removal area, a two-stage vulcanization area, an online detection area, a packaging and labeling area, and a control room. An automatic production line for rubber sealing rings involves the steps of loading and transferring, molded vulcanization, flash removal, second-stage vulcanization, packaging and labeling, and the like. The fully-automatic production line solves the technical problems in the prior art that the production of rubber sealing rings fails to adopt the molded vulcanization process, and meanwhile the specifications of the produced rubber sealing rings are single.Type: ApplicationFiled: November 7, 2023Publication date: July 11, 2024Inventors: Xiaofeng ZHANG, Jie ZHONG, Chen HAN, Bing LI, Liang WANG, Jiangxiong LUO, Chun XU, Yong HUANG, Xi LING, Zhe CHEN, Qianqian XU, Qingbo ZHENG, Siyu LIN, Qin CHEN, Xing LIU
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Publication number: 20240226679Abstract: A paddle racket is provided, including: a frame body, including a frame wall and a handle connected to the frame wall, the frame wall having an inner circumferential surface and defining a receiving space; a three-dimensional web core, disposed in the receiving space and including an outer circumferential surface facing the inner circumferential surface, including channels disposed through the three-dimensional web core in a thickness direction of the three-dimensional web core; two striking surface portions, disposed on two opposing sides of the three-dimensional web core, each striking surface portions including through holes, the through holes corresponding to and being in communication with parts of the channels; and double-sided adhesive layers, connecting the outer circumferential surface of the three-dimensional web core to the inner circumferential surface of the frame wall and connecting the two striking surface portions to the two opposing sides of the three-dimensional web core.Type: ApplicationFiled: February 6, 2023Publication date: July 11, 2024Inventor: Chen-Han LIN
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Publication number: 20240170323Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices.Type: ApplicationFiled: January 30, 2024Publication date: May 23, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Mrunal Abhijith KHADERBAD, Ko-Feng Chen, Zheng-Yong Liang, Chen-Han Wang, De-Yang Chiou, Yu-Yun Peng, Keng-Chu Lin