Patents by Inventor Chen-Hau Wu
Chen-Hau Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11073763Abstract: Shrinkage and mass losses are reduced in photoresist exposure and post exposure baking by utilizing a small group which will decompose. Alternatively a bulky group which will not decompose or a combination of the small group which will decompose along with the bulky group which will not decompose can be utilized. Additionally, polar functional groups may be utilized in order to reduce the diffusion of reactants through the photoresist.Type: GrantFiled: December 23, 2019Date of Patent: July 27, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Han Lai, Ching-Yu Chang, Chen-Hau Wu
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Publication number: 20200133125Abstract: Shrinkage and mass losses are reduced in photoresist exposure and post exposure baking by utilizing a small group which will decompose. Alternatively a bulky group which will not decompose or a combination of the small group which will decompose along with the bulky group which will not decompose can be utilized. Additionally, polar functional groups may be utilized in order to reduce the diffusion of reactants through the photoresist.Type: ApplicationFiled: December 23, 2019Publication date: April 30, 2020Inventors: Wei-Han Lai, Ching-Yu Chang, Chen-Hau Wu
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Patent number: 10514603Abstract: Shrinkage and mass losses are reduced in photoresist exposure and post exposure baking by utilizing a small group which will decompose. Alternatively a bulky group which will not decompose or a combination of the small group which will decompose along with the bulky group which will not decompose can be utilized. Additionally, polar functional groups may be utilized in order to reduce the diffusion of reactants through the photoresist.Type: GrantFiled: July 29, 2019Date of Patent: December 24, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Han Lai, Ching-Yu Chang, Chen-Hau Wu
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Publication number: 20190346766Abstract: Shrinkage and mass losses are reduced in photoresist exposure and post exposure baking by utilizing a small group which will decompose. Alternatively a bulky group which will not decompose or a combination of the small group which will decompose along with the bulky group which will not decompose can be utilized. Additionally, polar functional groups may be utilized in order to reduce the diffusion of reactants through the photoresist.Type: ApplicationFiled: July 29, 2019Publication date: November 14, 2019Inventors: Wei-Han Lai, Ching-Yu Chang, Chen-Hau Wu
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Patent number: 10365561Abstract: Shrinkage and mass losses are reduced in photoresist exposure and post exposure baking by utilizing a small group which will decompose. Alternatively a bulky group which will not decompose or a combination of the small group which will decompose along with the bulky group which will not decompose can be utilized. Additionally, polar functional groups may be utilized in order to reduce the diffusion of reactants through the photoresist.Type: GrantFiled: October 8, 2018Date of Patent: July 30, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Han Lai, Ching-Yu Chang, Chen-Hau Wu
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Patent number: 10276377Abstract: Various patterning methods involved with manufacturing semiconductor devices are disclosed herein. A method for fabricating a semiconductor structure (for example, interconnects) includes forming a patterned photoresist layer over a dielectric layer. An opening (hole) is formed in the patterned photoresist layer. In some embodiments, a surrounding wall of the patterned photoresist layer defines the opening, where the surrounding wall has a generally peanut-shaped cross section. The opening in the patterned photoresist layer can be used to form an opening in the dielectric layer, which can be filled with conductive material. In some embodiments, a chemical layer is formed over the patterned photoresist layer to form a pair of spaced apart holes defined by the chemical layer, and an etching process is performed on the dielectric layer using the chemical layer as an etching mask to form a pair of spaced apart holes through the dielectric layer.Type: GrantFiled: May 11, 2017Date of Patent: April 30, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yung-Sung Yen, Yu-Hsun Chen, Chen-Hau Wu, Chun-Kuang Chen, Ta-Ching Yu, Ken-Hsien Hsieh, Ming-Jhih Kuo, Ru-Gun Liu
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Publication number: 20190041749Abstract: Shrinkage and mass losses are reduced in photoresist exposure and post exposure baking by utilizing a small group which will decompose. Alternatively a bulky group which will not decompose or a combination of the small group which will decompose along with the bulky group which will not decompose can be utilized. Additionally, polar functional groups may be utilized in order to reduce the diffusion of reactants through the photoresist.Type: ApplicationFiled: October 8, 2018Publication date: February 7, 2019Inventors: Wei-Han Lai, Ching-Yu Chang, Chen-Hau Wu
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Patent number: 10114286Abstract: A photoresist with a group which will decompose bonded to a high etching resistance moiety is provided. Alternatively, the group which will decompose can additionally be attached to a re-attachment group that will re-attach to the polymer after the group which will decompose has cleaved from the polymer. The photoresist may also comprise a non-leaving monomer with a cross-linking site and a cross-linking agent.Type: GrantFiled: February 27, 2017Date of Patent: October 30, 2018Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Chen-Hau Wu, Wei-Han Lai, Ching-Yu Chang
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Patent number: 10036953Abstract: A photoresist includes a group which will decompose that is attached to a hydrocarbon backbone at multiple points along the hydrocarbon chain. With such an attachment, the group which will decompose will cleave from one point in order to generate a desired shift in polarity while still remaining bonded to the hydrocarbon backbone. This prevents the group which will decompose from leaving the photoresist, thereby reducing or eliminating volume losses associated with exposure and post-exposure baking.Type: GrantFiled: November 8, 2013Date of Patent: July 31, 2018Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Chen-Hau Wu, Ching-Yu Chang
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Patent number: 9989850Abstract: A system and method for photoresists is provided. In an embodiment a cross-linking or coupling reagent is included within a photoresist composition. The cross-linking or coupling reagent will react with the polymer resin within the photoresist composition to cross-link or couple the polymers together, resulting in a polymer with a larger molecular weight. This larger molecular weight will cause the dissolution rate of the photoresist to decrease, leading to a better depth of focus for the line.Type: GrantFiled: December 3, 2014Date of Patent: June 5, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hau Wu, Ching-Yu Chang
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Publication number: 20170338146Abstract: Various patterning methods involved with manufacturing semiconductor devices are disclosed herein. A method for fabricating a semiconductor structure (for example, interconnects) includes forming a patterned photoresist layer over a dielectric layer. An opening (hole) is formed in the patterned photoresist layer. In some embodiments, a surrounding wall of the patterned photoresist layer defines the opening, where the surrounding wall has a generally peanut-shaped cross section. The opening in the patterned photoresist layer can be used to form an opening in the dielectric layer, which can be filled with conductive material. In some embodiments, a chemical layer is formed over the patterned photoresist layer to form a pair of spaced apart holes defined by the chemical layer, and an etching process is performed on the dielectric layer using the chemical layer as an etching mask to form a pair of spaced apart holes through the dielectric layer.Type: ApplicationFiled: May 11, 2017Publication date: November 23, 2017Inventors: Yung-Sung Yen, Yu-Hsun Chen, Chen-Hau Wu, Chun-Kuang Chen, Ta-Ching Yu, Ken-Hsien Hsieh, Ming-Jhih Kuo, Ru-Gun Liu
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Patent number: 9773671Abstract: Provided is a material composition and method for inhibiting the printing of SRAFs onto a substrate including coating a substrate with a resist layer. After coating the substrate, the resist layer is patterned to form a main feature pattern and at least one sub-resolution assist feature (SRAF) pattern within the resist layer. The main feature pattern may include resist sidewalls and a portion of a layer underlying the patterned resist layer. In various examples, a material composition is deposited over the patterned resist layer and into each of the main feature pattern and the at least one SRAF pattern. Thereafter, a material composition development process is performed to dissolve a portion of the material composition within the main feature pattern and to expose the portion of the layer underlying the patterned resist layer.Type: GrantFiled: May 31, 2016Date of Patent: September 26, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Meng-Tze Chen, Chen-Hau Wu, Meng-Wei Chen, Kuei-Shun Chen, Yu-Chin Huang, Li-Hsiang Lai, Shih-Ming Chang, Ken-Hsien Hsieh
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Publication number: 20170176857Abstract: A photoresist with a group which will decompose bonded to a high etching resistance moiety is provided. Alternatively, the group which will decompose can additionally be attached to a re-attachment group that will re-attach to the polymer after the group which will decompose has cleaved from the polymer. The photoresist may also comprise a non-leaving monomer with a cross-linking site and a cross-linking agent.Type: ApplicationFiled: February 27, 2017Publication date: June 22, 2017Inventors: Chen-Hau Wu, Wei-Han Lai, Ching-Yu Chang
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Patent number: 9581908Abstract: A photoresist with a group which will decompose bonded to a high etching resistance moiety is provided. Alternatively, the group which will decompose can additionally be attached to a re-attachment group that will re-attach to the polymer after the group which will decompose has cleaved from the polymer. The photoresist may also comprise a non-leaving monomer with a cross-linking site and a cross-linking agent.Type: GrantFiled: July 17, 2014Date of Patent: February 28, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hau Wu, Wei-Han Lai, Ching-Yu Chang
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Patent number: 9529265Abstract: Provided in one embodiment is a method that includes selecting a photoresist that is one of a positive-tone photoresist and a negative-tone photoresist. A first additive or a second additive is selected based on the photoresist. The first additive has a fluorine component and a base component attached to a polymer and is selected if the a positive-tone resist is provided. The second additive has the fluorine component and an acid component attached to the polymer and is selected with a negative-tone resist is provided. The selected photoresist and the selected additive material are applied to a target substrate.Type: GrantFiled: June 20, 2014Date of Patent: December 27, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: An-Ren Zi, Chen-Hau Wu, Ching-Yu Chang
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Publication number: 20150331317Abstract: A photoresist with a group which will decompose bonded to a high etching resistance moiety is provided. Alternatively, the group which will decompose can additionally be attached to a re-attachment group that will re-attach to the polymer after the group which will decompose has cleaved from the polymer. The photoresist may also comprise a non-leaving monomer with a cross-linking site and a cross-linking agent.Type: ApplicationFiled: July 17, 2014Publication date: November 19, 2015Inventors: Chen-Hau Wu, Wei-Han Lai, Ching-Yu Chang
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Publication number: 20150316846Abstract: Provided in one embodiment is a method that includes selecting a photoresist that is one of a positive-tone photoresist and a negative-tone photoresist. A first additive or a second additive is selected based on the photoresist. The first additive has a fluorine component and a base component attached to a polymer and is selected if the a positive-tone resist is provided. The second additive has the fluorine component and an acid component attached to the polymer and is selected with a negative-tone resist is provided. The selected photoresist and the selected additive material are applied to a target substrate.Type: ApplicationFiled: June 20, 2014Publication date: November 5, 2015Inventors: An-Ren Zi, Chen-Hau Wu, Ching-Yu Chang
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Publication number: 20150132701Abstract: A photoresist includes a group which will decompose that is attached to a hydrocarbon backbone at multiple points along the hydrocarbon chain. With such an attachment, the group which will decompose will cleave from one point in order to generate a desired shift in polarity while still remaining bonded to the hydrocarbon backbone. This prevents the group which will decompose from leaving the photoresist, thereby reducing or eliminating volume losses associated with exposure and post-exposure baking.Type: ApplicationFiled: November 8, 2013Publication date: May 14, 2015Inventors: Chen-Hau Wu, Ching-Yu Chang
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Publication number: 20150086924Abstract: A system and method for photoresists is provided. In an embodiment a cross-linking or coupling reagent is included within a photoresist composition. The cross-linking or coupling reagent will react with the polymer resin within the photoresist composition to cross-link or couple the polymers together, resulting in a polymer with a larger molecular weight. This larger molecular weight will cause the dissolution rate of the photoresist to decrease, leading to a better depth of focus for the line.Type: ApplicationFiled: December 3, 2014Publication date: March 26, 2015Inventors: Chen-Hau Wu, Ching-Yu Chang
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Patent number: 8932799Abstract: A system and method for photoresists is provided. In an embodiment a cross-linking or coupling reagent is included within a photoresist composition. The cross-linking or coupling reagent will react with the polymer resin within the photoresist composition to cross-link or couple the polymers together, resulting in a polymer with a larger molecular weight. This larger molecular weight will cause the dissolution rate of the photoresist to decrease, leading to a better depth of focus for the line.Type: GrantFiled: March 14, 2013Date of Patent: January 13, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hau Wu, Ching-Yu Chang