Patents by Inventor Chen Hsiang Fang

Chen Hsiang Fang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11914832
    Abstract: A membrane touch panel device includes a circuit board unit, a light-blocking frame plate, a plurality of light-blocking tabs, and an operation panel unit that are stacked along a front-rear direction. The circuit board unit includes a circuit board having a plurality of keypad circuits, and a plurality of LEDs being electrically connected to the circuit board. A light transmission rate of the circuit board ranges from 0% to 20%. The light-blocking frame plate is stacked on the circuit board, and defines a hollow section provided for the LEDs to protrude thereinto. The light-blocking tabs are connected to the light-blocking frame plate such that the light-blocking tabs respectively cover the LEDs. The operation panel unit is stacked on the light-blocking frame plate, and has a plurality of key segments being respectively aligned with the keypad circuits, and being adapted to permit light generated by the LEDs to pass therethrough.
    Type: Grant
    Filed: September 27, 2022
    Date of Patent: February 27, 2024
    Assignee: Tong Lung Metal Industry Co., Ltd.
    Inventors: Pai-Hsiang Chuang, Ruei-Jie Jeng, Chen-Ming Lin, Ding-Sian Cai, Chun-Yi Fang
  • Publication number: 20200371426
    Abstract: The present invention relates to an anti-static photomask, including a substrate and a patterned mask layer formed on the substrate. The patterned mask layer includes a conductive strip and a conductive string, wherein the conductive strip includes an end, and the conductive string includes an isolated end. The end of the conductive strip is connected to the conductive string.
    Type: Application
    Filed: May 22, 2019
    Publication date: November 26, 2020
    Inventors: Tsung-Wei LIN, Chun-Yen LIAO, Chun-Sheng WU, Chen-Hsiang FANG, Chung-Chen HSU
  • Patent number: 8835559
    Abstract: A rubber-modified polystyrene resin composition is for making an electroplatable article which has a sectioned layer defining a unit area. The rubber-modified polystyrene resin composition includes a resin matrix, occlusion rubber particles dispersed in the resin matrix, and non-occlusion rubber particles dispersed in the resin matrix. A total sectional area ratio of the occlusion rubber particles to the non-occlusion rubber particles in the unit area ranges from 1.1 to 14.
    Type: Grant
    Filed: November 17, 2011
    Date of Patent: September 16, 2014
    Assignee: Chi Mei Corporation
    Inventors: Chien-Chung Wu, Chun-Ting Kuo, Wen-Yi Su, Chen-Hsiang Fang
  • Publication number: 20120142862
    Abstract: A rubber-modified polystyrene resin composition is for making an electroplatable article which has a sectioned layer defining a unit area. The rubber-modified polystyrene resin composition includes a resin matrix, occlusion rubber particles dispersed in the resin matrix, and non-occlusion rubber particles dispersed in the resin matrix. A total sectional area ratio of the occlusion rubber particles to the non-occlusion rubber particles in the unit area ranges from 1.1 to 14.
    Type: Application
    Filed: November 17, 2011
    Publication date: June 7, 2012
    Inventors: Chien-Chung WU, Chun-Ting KUO, Wen-Yi SU, Chen-Hsiang FANG
  • Publication number: 20040230003
    Abstract: The present invention discloses a transparent rubber-modified monovinylidene aromatic resin. The rubber-modified monovinylidene aromatic resin comprises: a dispersed rubber particle (A) and a continuous phase matrix copolymer (B). The surface of the molding has a maximum height difference (&Dgr;Hmax) of less than 3,200 Å, and an average height difference (&Dgr;Have) of less than 2,000 Å when measured with a surface profiler. The average ratios of major diameter to minor diameter of said rubber particles before and after annealing at 120° C. for 40 mins are A1 and A2 respectively, and the ratio of A1/A2 ranges form 1.08 to 2.35.
    Type: Application
    Filed: March 8, 2004
    Publication date: November 18, 2004
    Inventors: Ray-Hsi Hsu, Chen Hsiang Fang