Patents by Inventor Chen-Hsiang Hung
Chen-Hsiang Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11982866Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.Type: GrantFiled: December 15, 2022Date of Patent: May 14, 2024Assignee: TDK TAIWAN CORP.Inventors: Chao-Chang Hu, Liang-Ting Ho, Chen-Er Hsu, Yi-Liang Chan, Fu-Lai Tseng, Fu-Yuan Wu, Chen-Chi Kuo, Ying-Jen Wang, Wei-Han Hsia, Yi-Hsin Tseng, Wen-Chang Lin, Chun-Chia Liao, Shou-Jen Liu, Chao-Chun Chang, Yi-Chieh Lin, Shang-Yu Hsu, Yu-Huai Liao, Shih-Wei Hung, Sin-Hong Lin, Kun-Shih Lin, Yu-Cheng Lin, Wen-Yen Huang, Wei-Jhe Shen, Chih-Shiang Wu, Sin-Jhong Song, Che-Hsiang Chiu, Sheng-Chang Lin
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Patent number: 11934027Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.Type: GrantFiled: June 21, 2022Date of Patent: March 19, 2024Assignee: TDK TAIWAN CORP.Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
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Publication number: 20240055449Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.Type: ApplicationFiled: August 9, 2023Publication date: February 15, 2024Inventors: Chen-Hsiang HUNG, Chung-Chuan TSENG, Li-Hsin CHU, Chia-Ping LAI
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Publication number: 20230395595Abstract: A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.Type: ApplicationFiled: August 10, 2023Publication date: December 7, 2023Inventors: Chen-Hsiang HUNG, Li-Hsin CHU, Chia-Ping LAI, Chung-Chuan TSENG
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Patent number: 11784199Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.Type: GrantFiled: October 4, 2022Date of Patent: October 10, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chen-Hsiang Hung, Chung-Chuan Tseng, Li-Hsin Chu, Chia-Ping Lai
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Patent number: 11756955Abstract: A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.Type: GrantFiled: October 22, 2021Date of Patent: September 12, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chen-Hsiang Hung, Li-Hsin Chu, Chia-Ping Lai, Chung-Chuan Tseng
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Publication number: 20230034661Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.Type: ApplicationFiled: October 4, 2022Publication date: February 2, 2023Inventors: Chen-Hsiang HUNG, Chung-Chuan Tseng, Li-Hsin Chu, Chia-Ping Lai
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Patent number: 11488993Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.Type: GrantFiled: September 14, 2020Date of Patent: November 1, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chen-Hsiang Hung, Chung-Chuan Tseng, Li-Hsin Chu, Chia-Ping Lai
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Publication number: 20220045049Abstract: A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.Type: ApplicationFiled: October 22, 2021Publication date: February 10, 2022Inventors: Chen-Hsiang HUNG, Li-Hsin CHU, Chia-Ping LAI, Chung-Chuan TSENT
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Publication number: 20210066366Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.Type: ApplicationFiled: September 14, 2020Publication date: March 4, 2021Inventors: Chen-Hsiang HUNG, Chung-Chuan Tseng, Li-Hsin Chu, Chia-Ping Lai
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Patent number: 10777591Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.Type: GrantFiled: January 29, 2018Date of Patent: September 15, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chen-Hsiang Hung, Chung-Chuan Tseng, Li-Hsin Chu, Chia-Ping Lai
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Publication number: 20190148370Abstract: A semiconductor device includes: a capacitor that includes a first metal plate; a capacitor dielectric layer disposed over the first metal plate; and a second metal plate disposed over the capacitor dielectric layer; and a resistor that includes a metal thin film, wherein the metal thin film of the resistor and the second metal plate of the capacitor are formed of a same metal material and wherein a top surface of the metal thin film is substantially coplanar with a top surface of the second metal plate of the capacitor.Type: ApplicationFiled: April 27, 2018Publication date: May 16, 2019Inventors: Chen-Hsiang Hung, Li-Hsin Chu, Chia-Ping Lai, Chung-Chuan Tsent
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Publication number: 20190057991Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.Type: ApplicationFiled: January 29, 2018Publication date: February 21, 2019Inventors: Chen-Hsiang Hung, Chung-Chuan Tseng, Li-Hsin Chu, Chia-Ping Lai
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Publication number: 20080176021Abstract: An inner lining structure for a photoresistant collecting device includes a body, a receiving groove and a through-hole. A periphery of the body is a circular arced surface. A receiving groove is formed by concaving a top of the body downwards and the upper end is shaped like an opening. A through-hole is arranged in a center of the body and penetrates a bottom surface of the receiving groove and a bottom of the body. Based on the above assembly, the present invention engages with a sucking plate of a photoresistant coater and ensures that photoresistant filaments cannot adhere to the bottom of a wafer when the wafer is operated at a high speed.Type: ApplicationFiled: January 18, 2007Publication date: July 24, 2008Inventors: Chen-Hsiang Hung, Chih-Ming Lian, Hsun-Min Lee