Patents by Inventor Chen-Hsiang Hung

Chen-Hsiang Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12610412
    Abstract: A method and device for a first User Equipment (UE) are disclosed. In one embodiment, the first UE establishes a PC5 connection with a second UE for supporting a UE-to-UE (U2U) relay communication. The first UE also sends to the second UE a message to trigger a negotiated relay reselection, wherein the message includes a relay reselection indication information element (IE) and a link modification operation code IE set to a specific value.
    Type: Grant
    Filed: July 22, 2025
    Date of Patent: April 21, 2026
    Assignee: ASUS Technology Licensing Inc.
    Inventors: Chen-Hsiang Hung, Li-Te Pan
  • Patent number: 12610225
    Abstract: Methods, systems, and apparatuses are provided for relay User Equipment (UE) supporting candidate UE-to-UE (U2U) relay discovery, wherein a method for a relay UE comprises receiving, from a target end UE, a discovery solicitation message for candidate U2U relay discovery, and determining to transmit a discovery response message to the target end UE, in response to reception of the discovery solicitation message for candidate U2U relay discovery, wherein the discovery response message indicates the discovery response message being used for candidate U2U relay discovery by at least setting an application layer Identification (ID) indicated in the discovery response message to a specific value.
    Type: Grant
    Filed: June 18, 2025
    Date of Patent: April 21, 2026
    Assignee: ASUS Technology Licensing Inc.
    Inventors: Chen-Hsiang Hung, Li-Te Pan, Yu-Hsuan Guo
  • Publication number: 20260046953
    Abstract: Methods, systems, and apparatuses are provided for sending notification messages in multi-hop User Equipment (UE)-to-network (U2N) relay communications by intermediate relays in a wireless communication system, wherein a method comprises establishing a first PC5 connection with a remote UE for supporting a U2N relay communication between the remote UE and a network via the first relay UE and a second relay UE, establishing a second PC5 connection with the second relay UE for supporting the U2N relay communication, wherein the first relay UE is served by a first cell, detecting a PC5 Radio Link Failure (RLF) on the second PC5 connection or receiving a notification message indicating RLF of a Uu link from the second relay UE, performing a Radio Resource Control (RRC) connection re-establishment procedure to the network, omitting a transmission of a PC5-RRC message or not transmitting the PC5-RRC message to the remote UE if at least the first relay UE keeps being served by the first cell or a serving cell of the
    Type: Application
    Filed: July 30, 2025
    Publication date: February 12, 2026
    Inventors: Chen-Hsiang Hung, Li-Te Pan, Yu-Hsuan Guo
  • Publication number: 20260032743
    Abstract: A method and device for a first User Equipment (UE) are disclosed. In one embodiment, the first UE establishes a PC5 connection with a second UE for supporting a UE-to-UE (U2U) relay communication. The first UE also sends to the second UE a message to trigger a negotiated relay reselection, wherein the message includes a relay reselection indication information element (IE) and a link modification operation code IE set to a specific value.
    Type: Application
    Filed: July 22, 2025
    Publication date: January 29, 2026
    Inventors: Chen-Hsiang Hung, Li-Te Pan
  • Publication number: 20250393086
    Abstract: Methods, systems, and apparatuses are provided for target end User Equipment (UE) supporting candidate UE-to-UE (U2U) relay discovery in a wireless communication system, wherein a method for a target end UE comprises establishing a connection with a relay UE for supporting U2U relay communication between a source end UE and the target end UE via the relay UE, receiving a link modification request message indicating a list of candidate relay UEs from the relay UE for performing negotiated relay reselection, determining to transmit a discovery solicitation message to a candidate relay UE among the list of candidate relay UEs, wherein the discovery solicitation message indicates the discovery solicitation message being used for candidate U2U relay discovery by at least setting an application layer Identification (ID) indicated in the discovery solicitation message to a specific value, receiving, from the candidate relay UE, a discovery response message for candidate U2U relay discovery, and transmitting a link m
    Type: Application
    Filed: June 18, 2025
    Publication date: December 25, 2025
    Inventors: Chen-Hsiang Hung, Li-Te Pan, Yu-Hsuan Guo
  • Publication number: 20250392896
    Abstract: Methods, systems, and apparatuses are provided for relay User Equipment (UE) supporting candidate UE-to-UE (U2U) relay discovery, wherein a method for a relay UE comprises receiving, from a target end UE, a discovery solicitation message for candidate U2U relay discovery, and determining to transmit a discovery response message to the target end UE, in response to reception of the discovery solicitation message for candidate U2U relay discovery, wherein the discovery response message indicates the discovery response message being used for candidate U2U relay discovery by at least setting an application layer Identification (ID) indicated in the discovery response message to a specific value.
    Type: Application
    Filed: June 18, 2025
    Publication date: December 25, 2025
    Inventors: Chen-Hsiang Hung, Li-Te Pan, Yu-Hsuan Guo
  • Patent number: 12507294
    Abstract: Methods, systems, and apparatuses are provided for target end User Equipment (UE) supporting candidate UE-to-UE (U2U) relay discovery in a wireless communication system, wherein a method for a target end UE comprises establishing a connection with a relay UE for supporting U2U relay communication between a source end UE and the target end UE via the relay UE, receiving a link modification request message indicating a list of candidate relay UEs from the relay UE for performing negotiated relay reselection, determining to transmit a discovery solicitation message to a candidate relay UE among the list of candidate relay UEs, wherein the discovery solicitation message indicates the discovery solicitation message being used for candidate U2U relay discovery by at least setting an application layer Identification (ID) indicated in the discovery solicitation message to a specific value, receiving, from the candidate relay UE, a discovery response message for candidate U2U relay discovery, and transmitting a link m
    Type: Grant
    Filed: June 18, 2025
    Date of Patent: December 23, 2025
    Assignee: ASUS Technology Licensing Inc.
    Inventors: Chen-Hsiang Hung, Li-Te Pan, Yu-Hsuan Guo
  • Publication number: 20250359368
    Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.
    Type: Application
    Filed: July 29, 2025
    Publication date: November 20, 2025
    Inventors: Chen-Hsiang Hung, Chung-Chuan Tseng, Li-Hsin Chu, Chia-Ping Lai
  • Patent number: 12439713
    Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.
    Type: Grant
    Filed: August 9, 2023
    Date of Patent: October 7, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hsiang Hung, Chung-Chuan Tseng, Li-Hsin Chu, Chia-Ping Lai
  • Publication number: 20250151376
    Abstract: A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.
    Type: Application
    Filed: December 16, 2024
    Publication date: May 8, 2025
    Inventors: Chen-Hsiang HUNG, Li-Hsin CHU, Chia-Ping LAI, Chung-Chuan TSENG
  • Patent number: 12211838
    Abstract: A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.
    Type: Grant
    Filed: August 10, 2023
    Date of Patent: January 28, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Hsiang Hung, Li-Hsin Chu, Chia-Ping Lai, Chung-Chuan Tseng
  • Publication number: 20240055449
    Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.
    Type: Application
    Filed: August 9, 2023
    Publication date: February 15, 2024
    Inventors: Chen-Hsiang HUNG, Chung-Chuan TSENG, Li-Hsin CHU, Chia-Ping LAI
  • Publication number: 20230395595
    Abstract: A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.
    Type: Application
    Filed: August 10, 2023
    Publication date: December 7, 2023
    Inventors: Chen-Hsiang HUNG, Li-Hsin CHU, Chia-Ping LAI, Chung-Chuan TSENG
  • Patent number: 11784199
    Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.
    Type: Grant
    Filed: October 4, 2022
    Date of Patent: October 10, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Hsiang Hung, Chung-Chuan Tseng, Li-Hsin Chu, Chia-Ping Lai
  • Patent number: 11756955
    Abstract: A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.
    Type: Grant
    Filed: October 22, 2021
    Date of Patent: September 12, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Hsiang Hung, Li-Hsin Chu, Chia-Ping Lai, Chung-Chuan Tseng
  • Publication number: 20230034661
    Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.
    Type: Application
    Filed: October 4, 2022
    Publication date: February 2, 2023
    Inventors: Chen-Hsiang HUNG, Chung-Chuan Tseng, Li-Hsin Chu, Chia-Ping Lai
  • Patent number: 11488993
    Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: November 1, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Hsiang Hung, Chung-Chuan Tseng, Li-Hsin Chu, Chia-Ping Lai
  • Publication number: 20220045049
    Abstract: A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.
    Type: Application
    Filed: October 22, 2021
    Publication date: February 10, 2022
    Inventors: Chen-Hsiang HUNG, Li-Hsin CHU, Chia-Ping LAI, Chung-Chuan TSENT
  • Publication number: 20210066366
    Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.
    Type: Application
    Filed: September 14, 2020
    Publication date: March 4, 2021
    Inventors: Chen-Hsiang HUNG, Chung-Chuan Tseng, Li-Hsin Chu, Chia-Ping Lai
  • Patent number: 10777591
    Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: September 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Hsiang Hung, Chung-Chuan Tseng, Li-Hsin Chu, Chia-Ping Lai